High-voltage picosecond reflectometry in investigations of dynamic characteristics of discharge gaps

2011 ◽  
Author(s):  
M.I. Yalandin ◽  
K.A. Sharypov ◽  
V.G. Shpak ◽  
S.A. Shunailov ◽  
A.G. Reutova ◽  
...  
Keyword(s):  
High Voltage ◽  
Dynamic Characteristics

Effect of pulse width on dynamic characteristics of high voltage IGBTs

2014 ◽  
Author(s):  
John F. Donlon ◽  
Eric R. Motto ◽  
Eugen Wiesner ◽  
Eugen Stumpf ◽  
Shinichi Iura ◽  
...  
Keyword(s):  
High Voltage ◽  
Dynamic Characteristics ◽  
Pulse Width

Calculation for the Heating and Safe Operation Time of YKK Series High-voltage Motors in Starting Process

2013 ◽  
Vol 7 (1) ◽  
pp. 39-45 ◽  
Author(s):  
Yunyan Xia ◽  
Dawei Meng ◽  
Yongming Xu
Keyword(s):  
High Voltage ◽  
Dynamic Characteristics ◽  
Operation Time ◽  
Static Characteristic ◽  
Heating And Cooling ◽  
Motor Cooling ◽  
Starting Process ◽  
Starting Characteristics ◽  
Characteristic Dynamic ◽  
Important Significance

In order to analyze the heating and cooling conditions of high voltage motors of YKK series in starting process, the starting characteristics and ventilation systems are calculated. The starting characteristics calculation method is improved and compared with the static characteristic, dynamic characteristics come to more consistent with the actual situation. The calculation result of heating is more accurate according to the calculation of dynamic characteristics. A windresistance network model is built combined with the motor cooling structure to calculate the distribution of air flow in the motor. The locked-rotor safety running time in starting process is calculated based on the accurate calculation of heating and cooling condition. The result is more close to the experiment and it has an important significance to the design and improvement of YKK series high voltage motor.

Static and dynamic characteristics of high voltage ( 3.5 kV ) IGBT and MCT devices

2005 ◽  
Author(s):  
F. Bauer ◽  
T. Stockmeier ◽  
H. Lendenmann ◽  
H. Dettmer ◽  
W. Fichtner
Keyword(s):  
High Voltage ◽  
Dynamic Characteristics ◽  
Static And Dynamic Characteristics

Static and Dynamic Characteristics of SiC MOSFETs and SBDs for 3.3 kV 400 A Full SiC Modules

2015 ◽  
Vol 821-823 ◽  
pp. 592-595 ◽  
Author(s):  
Keiji Wada ◽  
Hideto Tamaso ◽  
Satomi Itoh ◽  
Kenji Kanbara ◽  
Toru Hiyoshi ◽  
...  
Keyword(s):  
Power Systems ◽  
High Voltage ◽  
Dynamic Characteristics ◽  
Static Characteristics ◽  
Drain Voltage ◽  
Inductive Load ◽  
Static And Dynamic Characteristics ◽  
Edge Termination ◽  
Turn On ◽  
Igbt Modules

Characteristics of SiC MOSFETs and SBDs with 3.3 kV-class have been presented. Static Characteristics of the MOSFET showed a specific on-resistance of 14.2 mΩ cm2. A breakdown voltage of 3850 V is obtained by using the dose optimized edge termination structure as we have previously reported [1]. At the same time, reverse leakage current of the 3.3 kV SiC SBDs can be suppressed by the JBS structure and the edge termination which is also used in the MOSFETs. By using the MOSFETs and SBDs, we have demonstrated the superior capability of the 3.3 kV 400 A full SiC 2 in 1 modules with a compatible case and terminal configurations to Si IGBT modules. Dynamic characteristics of the full SiC module in an inductive load switching exhibits superior turn-on and turn-off properties even at a high drain voltage of 1650 V, demonstrating the availability of high voltage SiC power systems.

Next Generation Planar 1700 V, 20 mΩ 4H-SiC DMOSFETs with Low Specific On-Resistance and High Switching Speed

2017 ◽  
Vol 897 ◽  
pp. 521-524 ◽  
Author(s):  
Q.J. Zhang ◽  
G. Wang ◽  
Charlotte Jonas ◽  
Craig Capell ◽  
Steve Pickle ◽  
...  
Keyword(s):  
Detailed Analysis ◽  
High Voltage ◽  
Dynamic Characteristics ◽  
High Power ◽  
Switching Speed ◽  
Static And Dynamic Characteristics ◽  
Medium Voltage ◽  
Fast Switching ◽  
High Switching Speed ◽  
Fast Switching Speed

Due to their fast switching speed, knee-free forward characteristics, and a robust, low reverse recovery body diode, SiC MOSFETs are ideal candidates to replace silicon IGBTs in many high-power medium-voltage applications. 1700 V SiC MOSFETs have already been released to production at Wolfspeed based on its 2nd Gen technology. In this paper, we present our latest results in high voltage 4H-SiC MOSFET development. A low specific on-resistance of 4.7 mΩ⋅cm2 has been achieved on 1700 V, 20 mΩ 4H-SiC DMOSFETs at 250°C based on a 3rd generation planar MOSFET platform, which is less than half of the resistance of the previous generation devices. A detailed analysis has been carried out with respect to the static and dynamic characteristics, third quadrant conduction, and body diode reverse recovery charge, etc.

High-Voltage Ultra-Fast Pulse Diode Stack Based on 4H-SiC

2016 ◽  
Vol 858 ◽  
pp. 786-789 ◽  
Author(s):  
Vladimir A. Ilyin ◽  
Alexey V. Afanasyev ◽  
Boris V. Ivanov ◽  
Alexey F. Kardo-Sysoev ◽  
Victor V. Luchinin ◽  
...  
Keyword(s):  
High Voltage ◽  
Dynamic Characteristics ◽  
Leading Edge ◽  
Edge Length ◽  
Static And Dynamic Characteristics ◽  
Switching Performance ◽  
Bandgap Narrowing ◽  
Heavily Doped ◽  
Simulation Results ◽  
Fast Pulse

The paper reports on the results of the studies of static and dynamic characteristics of 4H-SiC drift step recovery diodes (DSRDs) assembled in diode stacks. Switching performance of single dies has been simulated and experimentally confirmed. It was established that the switching process is determined primarily by the incomplete ionization of acceptors in 4H-SiC and by the bandgap narrowing in heavily doped emitters. Based on the simulation results the optimized die size has been selected. For DSRD stacks of 4 and 8 dies I-V and C-V measurements are reported. The stacks were dynamically tested in a special oscillator circuit. Repetitive voltage pulses of 10.5 kV with the leading edge length of 900 ps were demonstrated.

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