A study of effects of plasma-induced charging damage on hot-carrier lifetime using pre-stressed data

1999 4th International Symposium on Plasma Process-Induced Damage (IEEE Cat. No.99TH8395) ◽

10.1109/ppid.1999.798815 ◽

2003 ◽

Author(s):

B. Bhuva ◽

P. Mongkolkachit ◽

N. Bui ◽

S. Kerns

Keyword(s):

Carrier Lifetime ◽

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Impact of statistics on hot-carrier lifetime estimates of n-channel MOSFETs

10.1117/12.139350 ◽

1993 ◽

Author(s):

Eric S. Snyder ◽

Ashish Kapoor ◽

Clint Anderson

Keyword(s):

Carrier Lifetime ◽

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CMOS hot carrier lifetime improvement from deuterium anneal

56th Annual Device Research Conference Digest (Cat. No.98TH8373) ◽

10.1109/drc.1998.731105 ◽

2002 ◽

Author(s):

E. Li ◽

E. Rosenbaum ◽

J. Tao ◽

P. Fang

Keyword(s):

Carrier Lifetime ◽

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Impact of Mechanical Stress on Hot-Carrier Lifetime and Time-Dependent Dielectric Breakdown in Downscaled Complimentary Metal–Oxide–Semiconductor

Japanese Journal of Applied Physics ◽

10.1143/jjap.48.021206 ◽

2009 ◽

Vol 48 (2) ◽

pp. 021206 ◽

Author(s):

Eiji Morifuji

Keyword(s):

Metal Oxide ◽

Mechanical Stress ◽

Carrier Lifetime ◽

Dielectric Breakdown ◽

Metal Oxide Semiconductor ◽

Time Dependent ◽

Oxide Semiconductor ◽

Hot Carrier ◽

Time Dependent Dielectric Breakdown

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The Effects of Offset Spacer on nMOSFET Hot-Carrier Lifetime

ECS Transactions ◽

10.1149/1.3694307 ◽

2019 ◽

Vol 44 (1) ◽

pp. 135-139 ◽

Author(s):

Junhong Feng ◽

Zhenghao Gan ◽

Lifei Zhang ◽

Lifu Chang ◽

Zicheng Pan ◽

...

Keyword(s):

Carrier Lifetime ◽

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Bias and temperature dependence of hot carrier lifetime from 77 K to 300 K

International Technical Digest on Electron Devices Meeting ◽

10.1109/iedm.1992.307457 ◽

1992 ◽

Author(s):

Song ◽

MacWilliams ◽

Cable ◽

Woo

Keyword(s):

Temperature Dependence ◽

Carrier Lifetime ◽

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Statistical variation of NMOSFET hot-carrier lifetime and its impact on digital circuit reliability

Proceedings of International Electron Devices Meeting ◽

10.1109/iedm.1995.497175 ◽

2002 ◽

Author(s):

J.F. Chen ◽

B.W. McGaughy ◽

Chenming Hu

Keyword(s):

Carrier Lifetime ◽

Digital Circuit ◽

Circuit Reliability ◽

Hot Carrier ◽

Statistical Variation

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A drain avalanche hot carrier lifetime model for n- and p-channel MOSFETs

2002 IEEE International Reliability Physics Symposium. Proceedings. 40th Annual (Cat. No.02CH37320) ◽

10.1109/relphy.2002.996614 ◽

2003 ◽

Author(s):

N. Koike ◽

K. Tatsuuma

Keyword(s):

Carrier Lifetime ◽

Hot Carrier ◽

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A new approach to evaluation of hot-carrier lifetime of ring oscillator (RO)

IEEE Transactions on Electron Devices ◽

10.1109/ted.2002.802660 ◽

2002 ◽

Vol 49 (9) ◽

pp. 1672-1674 ◽

Author(s):

Jiong Zhang ◽

S.-F.S. Chu

Keyword(s):

Carrier Lifetime ◽

Ring Oscillator ◽

New Approach ◽

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A Drain Avalanche Hot Carrier Lifetime Model for n- and p-Channel MOSFETs

IEEE Transactions on Device and Materials Reliability ◽

10.1109/tdmr.2004.831992 ◽

2004 ◽

Vol 4 (3) ◽

pp. 457-466 ◽

Author(s):

N. Koike ◽

K. Tatsuuma

Keyword(s):

Carrier Lifetime ◽

Hot Carrier ◽

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Relation between the hot carrier lifetime of transistors and CMOS SRAM products

10.1109/irps.1990.363519 ◽

1990 ◽

Author(s):

Jacob A. van der Pol ◽

Jan J. Koomen

Keyword(s):

Carrier Lifetime ◽

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