Plasma damage reduction for high density plasma CVD phosphosilicate glass process

Author(s):  
Sunway Chen ◽  
Chu-Yun Fu ◽  
Syun-Ming Jang ◽  
Chen-Hua Yu ◽  
Mong-Song Liang
1988 ◽  
Vol 129 ◽  
Author(s):  
Shin Araki ◽  
Hideki Kamaji ◽  
Kazuo Norimoto

ABSTRACTWe have made a-Si photoreceptors at low pressure to prevent the formation of SimHn powders and by separating the growing surface from the high density plasma. A new plasma CVD method using a hollow-cathode discharge, where the discharge electrode is the cathode, is described. There is a hollow region in the discharge electrode. Hollow-cathode discharge enables a high density plasma to form at low pressure. The gas is decomposed in the hollow cathode preventing plasma damage to the film. This method allows us to achieve a high deposition rate (10 µm/h) and good quality films for photoreceptors.


1997 ◽  
Author(s):  
Wei Lu ◽  
Jia Z. Zheng ◽  
John Sudijuno ◽  
Hoon L. Yap ◽  
Kok S. Fam ◽  
...  

2000 ◽  
Vol 147 (2) ◽  
pp. 719 ◽  
Author(s):  
A. P. Zhang ◽  
G. Dang ◽  
F. Ren ◽  
X. A. Cao ◽  
H. Cho ◽  
...  

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