Investigations on the recombination activity of grain boundaries in MC silicon

AbstractIn silicon bicrystals grain boundaries (GBs) become recombining after they have been annealed in argon at temperatures higher than 800°C for tens of hours. In order to verify the eventual influence of metallic elements, interstitials gold atoms are introduced in the bicrystals by diffusion (T ≤ 8000 C) from gold dots deposited far from the GB (gold could be segregated by the GB but cannot give deep levels in the grains). It is found by DLTS, EBIC contrast and LBIC scan map that the recombination strength of GBs is not changed by gold in diffusion in as grown bicrystals, while it is reduced in annealed samples. Similar results are obtained with GBs of polycrystalline wafers.It is concluded that the activation of GBs in CZ silicon bicrystals is certainly due to the segregation of a slow diffuser like oxygen, and that fast diffusers play a secondary role only.

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Зависимость объемных электрофизических свойств мультикремния от параметров разориентации зерен

Физика и техника полупроводников ◽

10.21883/ftp.2019.01.46988.8814 ◽

2019 ◽

Vol 53 (1) ◽

pp. 59 ◽

Cited By ~ 1

Author(s):

С.М. Пещерова ◽

Е.Б. Якимов ◽

А.И. Непомнящих ◽

В.И. Орлов ◽

О.В. Феклисова ◽

...

Keyword(s):

Laser Beam ◽

Grain Boundaries ◽

Grain Orientation ◽

Carrier Lifetime ◽

Defect Density ◽

Large Degree ◽

Grain Structure ◽

Induced Current ◽

Recombination Activity ◽

Defects And Impurities

AbstractThe recombination activity of intragrain defects in multicrystalline silicon is investigated by the electron or laser beam induced current methods. The interrelation of the grain orientation with the character of the distribution of intragrain defects (dislocations and impurity inclusions) and their recombination activity is revealed. The defect grain structure is investigated using various etching procedures to reveal the defects. It is shown that the defect density and distribution in the grains depend on their orientation relative the growth axis. Therefore, it is intragrain defects and impurities that are to a large degree responsible for degradation of the nonequilibrium carrier lifetime when compared with grain boundaries.

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Carrier Recombination Activity and Structural Properties of Small-Angle Grain Boundaries in Multicrystalline Silicon

Japanese Journal of Applied Physics ◽

10.1143/jjap.46.6489 ◽

2007 ◽

Vol 46 (10A) ◽

pp. 6489-6497 ◽

Cited By ~ 91

Author(s):

Jun Chen ◽

Takashi Sekiguchi

Keyword(s):

Grain Boundaries ◽

Structural Properties ◽

Small Angle ◽

Multicrystalline Silicon ◽

Recombination Activity ◽

Carrier Recombination

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Recombination Activity of Twin Boundaries in Silicon Ribbons

Solid State Phenomena ◽

10.4028/www.scientific.net/ssp.178-179.106 ◽

2011 ◽

Vol 178-179 ◽

pp. 106-109 ◽

Cited By ~ 2

Author(s):

Eugene B. Yakimov ◽

Olga V. Feklisova ◽

Sergei K. Brantov

Keyword(s):

Electron Beam ◽

Grain Boundaries ◽

Room Temperature ◽

Carbon Foil ◽

Induced Current ◽

Recombination Activity ◽

Twin Boundaries ◽

Electron Beam Induced Current

Investigations of silicon layers grown on carbon foil were carried out using the Electron Beam Induced Current (EBIC) methods. The most of grain boundaries in these ribbons are (111) twin boundaries elongated along the direction. The EBIC measurements showed that the recombination contrast of dislocations and of the most part of twin boundaries at room temperature is practically absent and only random grain boundaries and very small part of twin boundaries produce a noticeable contrast. At lower temperatures a number of electrically active twin boundaries increases but the most part of them remains inactive. A contamination with iron increases the recombination activity of random boundaries but not the activity of twin boundaries.

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