Зависимость объемных электрофизических свойств мультикремния от параметров разориентации зерен

AbstractThe recombination activity of intragrain defects in multicrystalline silicon is investigated by the electron or laser beam induced current methods. The interrelation of the grain orientation with the character of the distribution of intragrain defects (dislocations and impurity inclusions) and their recombination activity is revealed. The defect grain structure is investigated using various etching procedures to reveal the defects. It is shown that the defect density and distribution in the grains depend on their orientation relative the growth axis. Therefore, it is intragrain defects and impurities that are to a large degree responsible for degradation of the nonequilibrium carrier lifetime when compared with grain boundaries.

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Evaluation of Recombination Velocity at Grain Boundaries in Poly-Si Solar Cells with Laser Beam Induced Current

Solid State Phenomena ◽

10.4028/www.scientific.net/ssp.93.351 ◽

2003 ◽

Vol 93 ◽

pp. 351-354 ◽

Cited By ~ 3

Author(s):

N. Sakitani ◽

K. Nishioka ◽

T. Yagi ◽

Y. Yamamoto ◽

Yukari Ishikawa ◽

...

Keyword(s):

Solar Cells ◽

Laser Beam ◽

Grain Boundaries ◽

Induced Current ◽

Si Solar Cells ◽

Recombination Velocity

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Application of X-ray synchrotron techniques to the characterization of the chemical nature and recombination activity of grown-in and process-induced defects and impurities in solar cells

MRS Proceedings ◽

10.1557/proc-719-f6.6 ◽

2002 ◽

Vol 719 ◽

Cited By ~ 2

Author(s):

T. Buonassisi ◽

O.F. Vyvenko ◽

A.A. Istratov ◽

E.R. Weber ◽

R. Schindler

Keyword(s):

Solar Cells ◽

Chemical Nature ◽

Analytical Techniques ◽

Spot Size ◽

Fluorescence Signal ◽

Induced Current ◽

Recombination Activity ◽

X Ray ◽

Defects And Impurities ◽

Induced Defects

AbstractResults of the application of a combination of synchrotron radiation based analytical techniques, X-ray Beam Induced Current (XBIC) and microprobe X-ray Fluorescence (ν-XRF) to the analysis of shunts and lifetime limiting defects in solar cells are reported. XBIC, a new lifetime measurement technique similar to the Laser Beam Induced Current (LBIC) technique, uses a focused X-ray beam to generate minority charge carriers, which are then collected by the p-n junction of the solar cell. The X-ray beam is focused down to a spot size varying from approximately 1×1 νm to 5×5 νm, depending on the settings of focusing mirrors and slits. The sample stage is moved by computer-controlled step motors with sub-micron accuracy. Since the X-ray Beam Induced Current, which characterizes the minority carrier diffusion length in the spot where the X-ray beam hits the sample, and the X-ray Fluorescence signal, which characterizes the chemical nature of the precipitates under the beam, are measured at the same time, the chemical nature of the defects and impurities and their recombination activity can be studied simultaneously, in situ, and with a micron-scale resolution.We present the results of the applications of these techniques to low lifetime regions in fully processed solar cells. The solar cells were pre-characterized by LBIC and thermography, and regions of interest (containing shunts) were selected. An ν-XRF scan in this area of low lifetime revealed the presence of silver and titanium far from the contact strip, suggesting a process-induced defect.

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The Crystalline Quality of Epitaxial Si Layers Solution Grown on Polycrystalline Si Substrates

MRS Proceedings ◽

10.1557/proc-358-889 ◽

1994 ◽

Vol 358 ◽

Cited By ~ 6

Author(s):

M. Albrecht ◽

B. Steiner ◽

Th. Bergmann ◽

A. Voigt ◽

W. Dorsch ◽

...

Keyword(s):

Grain Boundaries ◽

Epitaxial Layer ◽

Defect Density ◽

Thin Layers ◽

Induced Current ◽

Si Substrates ◽

Transmission Electron ◽

Current Transmission ◽

Electron Beam Induced Current

ABSTRACTWe investigate the crystalline and electrical quality of thin layers epitaxially grown on polycrystalline substrates from metallic solution by the method of electron beam induced current, transmission electron microscopy and etching experiments. We observe a reduced recombination strength of dislocations and small angle grain boundaries, i.e. an improved electrical quality of the epitaxial layer compared to the substrate. The improved quality can be attributed (i) to an altered structure of grain boundaries and dislocations and (ii) to a reduced defect density in the epitaxial layer.

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Recombination Activity of Twin Boundaries in Silicon Ribbons

Solid State Phenomena ◽

10.4028/www.scientific.net/ssp.178-179.106 ◽

2011 ◽

Vol 178-179 ◽

pp. 106-109 ◽

Cited By ~ 2

Author(s):

Eugene B. Yakimov ◽

Olga V. Feklisova ◽

Sergei K. Brantov

Keyword(s):

Electron Beam ◽

Grain Boundaries ◽

Room Temperature ◽

Carbon Foil ◽

Induced Current ◽

Recombination Activity ◽

Twin Boundaries ◽

Electron Beam Induced Current

Investigations of silicon layers grown on carbon foil were carried out using the Electron Beam Induced Current (EBIC) methods. The most of grain boundaries in these ribbons are (111) twin boundaries elongated along the direction. The EBIC measurements showed that the recombination contrast of dislocations and of the most part of twin boundaries at room temperature is practically absent and only random grain boundaries and very small part of twin boundaries produce a noticeable contrast. At lower temperatures a number of electrically active twin boundaries increases but the most part of them remains inactive. A contamination with iron increases the recombination activity of random boundaries but not the activity of twin boundaries.

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Analysis of Electrical Properties of Grain Boundaries in Polycrystalline Silicon Solar Cell Using Laser Beam Induced Current

Japanese Journal of Applied Physics ◽

10.1143/jjap.43.4068 ◽

2004 ◽

Vol 43 (7A) ◽

pp. 4068-4072 ◽

Cited By ~ 3

Author(s):

Toshiki Yagi ◽

Kensuke Nishioka ◽

Yukiharu Uraoka ◽

Takashi Fuyuki

Keyword(s):

Solar Cell ◽

Electrical Properties ◽

Laser Beam ◽

Grain Boundaries ◽

Polycrystalline Silicon ◽

Silicon Solar Cell ◽

Induced Current

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Effect of hydrogen plasma treatment on grain boundaries in polycrystalline silicon solar cell evaluated by laser-beam-induced current

Solar Energy Materials and Solar Cells ◽

10.1016/j.solmat.2006.06.060 ◽

2007 ◽

Vol 91 (1) ◽

pp. 1-5 ◽

Cited By ~ 23

Author(s):

Kensuke Nishioka ◽

Toshiki Yagi ◽

Yukiharu Uraoka ◽

Takashi Fuyuki

Keyword(s):

Solar Cell ◽

Laser Beam ◽

Plasma Treatment ◽

Grain Boundaries ◽

Polycrystalline Silicon ◽

Silicon Solar Cell ◽

Hydrogen Plasma ◽

Induced Current

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On the Recombination Activity of Oxygen Precipitation Related Lattice Defects in Silicon

MRS Proceedings ◽

10.1557/proc-378-35 ◽

1995 ◽

Vol 378 ◽

Cited By ~ 5

Author(s):

J. Vanhellemont ◽

A. Kaniava ◽

M. Libezny ◽

E. Simoen ◽

G. Kissinger ◽

...

Keyword(s):

Carrier Lifetime ◽

Minority Carrier ◽

Defect Density ◽

Minority Carrier Lifetime ◽

Excitation Level ◽

Lattice Defects ◽

Recombination Activity ◽

Extended Defect ◽

Oxygen Precipitation ◽

Complementary Techniques

AbstractThe recombination activity of oxygen precipitation related lattice defects in p- and n-type silicon is studied with photoluminescence (PL) and microwave absorption (MWA) techniques. A direct correlation is observed between the amount of precipitated oxygen and the extended defect density on one hand and the minority carrier lifetime and PL activity on the other hand. The PL analyses show as dominant features in the spectra the Dl and D2 lines. The relative amplitude of the D-lines in the different samples is investigated as a function of the oxygen content, defect density and excitation level. The results are correlated with those of complementary techniques and are interrelated on the basis of Shockley-Read-Hall (SRH) theory.

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High-resolution EM study of submicrometer-grained Al-Mg solid solution alloys

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100138993 ◽

1995 ◽

Vol 53 ◽

pp. 524-525

Author(s):

Z. Horita ◽

D. J. Smith ◽

M. Furukawa ◽

M. Nemoto ◽

R. Z. Valiev ◽

...

Keyword(s):

Electron Microscopy ◽

Solid Solution ◽

High Resolution ◽

Grain Boundaries ◽

Energy State ◽

High Energy ◽

Grain Structure ◽

Boundary Structure ◽

Solid Solution Alloy ◽

Average Grain Size

It is possible to produce metallic materials with submicrometer-grained (SMG) structures by imposing an intense plastic strain under quasi-hydrostatic pressure. Studies using conventional transmission electron microscopy (CTEM) showed that many grain boundaries in the SMG structures appeared diffuse in nature with poorly defined transition zones between individual grains. The implication of the CTEM observations is that the grain boundaries of the SMG structures are in a high energy state, having non-equilibrium character. It is anticipated that high-resolution electron microscopy (HREM) will serve to reveal a precise nature of the grain boundary structure in SMG materials. A recent study on nanocrystalline Ni and Ni3Al showed lattice distortion and dilatations in the vicinity of the grain boundaries. In this study, HREM observations are undertaken to examine the atomic structure of grain boundaries in an SMG Al-based Al-Mg alloy.An Al-3%Mg solid solution alloy was subjected to torsion straining to produce an equiaxed grain structure with an average grain size of ~0.09 μm.

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