scholarly journals Origin of recombination activity of non-coherent Σ3{111} grain boundaries with a positive deviation in the tilt angle in cast-grown silicon ingots

2020 ◽  
Vol 14 (1) ◽  
pp. 011002
Author(s):  
Yutaka Ohno ◽  
Takehiro Tamaoka ◽  
Hideto Yoshida ◽  
Yasuo Shimizu ◽  
Kentaro Kutsukake ◽  
...  
Keyword(s):  
Grain Boundaries ◽  
Tilt Angle ◽  
Positive Deviation ◽  
Recombination Activity

Variant Selection in Fcc-to-Bcc Precipitation at Grain Boundaries in Ni-43Cr Alloy

2005 ◽  
Vol 475-479 ◽  
pp. 305-308 ◽  
Author(s):  
Yoshitaka Adachi ◽  
Fu Xing Yin ◽  
Kazunari Hakata ◽  
Kaneaki Tsuzaki
Keyword(s):  
Grain Boundary ◽  
Grain Boundaries ◽  
Tilt Angle ◽  
Boundary Plane ◽  
Variant Selection ◽  
Orientation Relationships ◽  
Boundary Misorientation ◽  
Grain Boundary Plane ◽  
Grain Boundary Misorientation ◽  
Selection Of

Variant selection of bcc-Cr at the grain boundaries in a supersaturated fcc matrix was studied using a Ni-43Cr alloy. The preferentially selected variant was examined as a function of the grain boundary misorientation, the tilt angle between the {111}fcc plane and the grain boundary plane, and the orientation relationships with respect to both of the adjacent matrix grains.

scholarly journals Effect of Grain Boundary Structure on Grain Boundary Diffusivities in the Au/Ag System

1990 ◽  
Vol 209 ◽  
Author(s):  
Qing Ma ◽  
R. W. Balluffi
Keyword(s):  
Thin Film ◽  
Grain Boundary ◽  
Grain Boundaries ◽  
Tilt Angle ◽  
Structural Unit ◽  
Boundary Structure ◽  
Grain Boundary Structure ◽  
Unit Model ◽  
Tilt Boundaries ◽  
Accumulation Method

ABSTRACTGrain boundary chemical diffusivities for a series of symmetric [001] tilt boundaries in the Au/Ag system were measured by the surface accumulation method using newly developed thin-film multi-crystal specimens, in which the grain boundaries feeding the accumulation surface were all of the same type. Possible effects due to segregation at the grain boundaries and surfaces were avoided. CSL boundaries of low-Σ ( i.e., 5, 13, 17, 25) and also more general boundaries with tilt angles between the low-Σ orientations were selected. The diffusivities were found to vary monotonically with tilt angle ( i.e., no cusps at low-Σ's were found) in a manner consistent with the Structural Unit model.

Thermal Stress During Zone-Melting-Recrystallization of Silicon on Insulator Films: The Origin of Subboundaries and In-Plane Orientation of SOI

1985 ◽  
Vol 53 ◽  
Author(s):  
J.M. Gibson ◽  
L.N. Pfeiffer ◽  
K.W. West ◽  
D.C. Joy
Keyword(s):  
Thermal Stress ◽  
Grain Boundaries ◽  
Tilt Angle ◽  
Elastic Anisotropy ◽  
Zone Melting ◽  
Silicon On Insulator ◽  
Experimental Results ◽  
Plane Orientation

ABSTRACTThe effect of thermal stress during zone-melting recrystallization of silicon on insulator films is considered. New experimental results from graphite-strip heated films are drawn upon. It is found that low-angle grain boundaries exhibit an inverse dependence between spacing and tilt angle. This is explained semiquantitatively by a model in which thermal stress induced film buckling is responsible for the existence of low-angle grain boundaries. It is also suggested that the predominance of the <100> orientation in these films is partly due to thermal stress and the elastic anisotropy of silicon. Thus thermal stress is proposed as the origin of the two major features of zone-melted films.

scholarly journals Recombination activity of grain boundaries in high-performance multicrystalline Si during solar cell processing

2018 ◽  
Vol 123 (5) ◽  
pp. 055705 ◽  
Author(s):  
Krzysztof Adamczyk ◽  
Rune Søndenå ◽  
Gaute Stokkan ◽  
Erin Looney ◽  
Mallory Jensen ◽  
...  
Keyword(s):  
Solar Cell ◽  
Grain Boundaries ◽  
High Performance ◽  
Recombination Activity ◽  
Cell Processing

Origin of recombination activity at small angle grain boundaries in multicrystalline silicon using multi-seed casting growth method

2015 ◽  
Vol 54 (8S1) ◽  
pp. 08KD16 ◽  
Author(s):  
Takuto Kojima ◽  
Tomihisa Tachibana ◽  
Yoshio Ohshita ◽  
Ronit R. Prakash ◽  
Takashi Sekiguchi ◽  
...  
Keyword(s):  
Grain Boundaries ◽  
Small Angle ◽  
Multicrystalline Silicon ◽  
Recombination Activity ◽  
Growth Method

Origin of Grain Boundary Recombination Activity in Silicon Wafers

1990 ◽  
Vol 182 ◽  
Author(s):  
H. Amanrich ◽  
S. Martinuzzi ◽  
M. Pasquinelli
Keyword(s):  
Grain Boundary ◽  
Grain Boundaries ◽  
Deep Levels ◽  
Silicon Wafers ◽  
Metallic Elements ◽  
Recombination Activity ◽  
Secondary Role

AbstractIn silicon bicrystals grain boundaries (GBs) become recombining after they have been annealed in argon at temperatures higher than 800°C for tens of hours. In order to verify the eventual influence of metallic elements, interstitials gold atoms are introduced in the bicrystals by diffusion (T ≤ 8000 C) from gold dots deposited far from the GB (gold could be segregated by the GB but cannot give deep levels in the grains). It is found by DLTS, EBIC contrast and LBIC scan map that the recombination strength of GBs is not changed by gold in diffusion in as grown bicrystals, while it is reduced in annealed samples. Similar results are obtained with GBs of polycrystalline wafers.It is concluded that the activation of GBs in CZ silicon bicrystals is certainly due to the segregation of a slow diffuser like oxygen, and that fast diffusers play a secondary role only.

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