Controlled field effect surface passivation of crystalline n-type silicon and its application to back-contact silicon solar cells

2014 ◽  
Author(s):  
Ruy S Bonilla ◽  
Christian Reichel ◽  
Martin Hermle ◽  
Semih Senkader ◽  
Peter Wilshaw
Keyword(s):  
Solar Cells ◽  
Field Effect ◽  
Surface Passivation ◽  
Silicon Solar Cells ◽  
Back Contact ◽  
Type Silicon

scholarly journals Influence of the Front Surface Passivation Quality on Large Area n-Type Silicon Solar Cells with Al-Alloyed Rear Emitter

2011 ◽  
Vol 8 ◽  
pp. 487-492 ◽  
Author(s):  
F. Book ◽  
T. Wiedenmann ◽  
G. Schubert ◽  
H. Plagwitz ◽  
G. Hahn
Keyword(s):  
Solar Cells ◽  
Surface Passivation ◽  
Front Surface ◽  
Silicon Solar Cells ◽  
Large Area ◽  
Type Silicon

Wet Chemical Oxidation of Silicon Surfaces Prior to the Deposition of All-PECVD AlOx/a-SiNx Passivation Stacks for Silicon Solar Cells

2012 ◽  
Vol 195 ◽  
pp. 310-313 ◽  
Author(s):  
Abdelazize Laades ◽  
Heike Angermann ◽  
Hans Peter Sperlich ◽  
Uta Stürzebecher ◽  
Carlos Alberto Díaz Álvarez ◽  
...  
Keyword(s):  
Solar Cells ◽  
Surface Passivation ◽  
Chemical Vapor ◽  
Chemical Oxidation ◽  
Silicon Surfaces ◽  
Silicon Solar Cells ◽  
Rear Side ◽  
Type Silicon ◽  
Wet Chemical ◽  
P Type

Aluminum oxide (AlOx) is currently under intensive investigation for use in surface passivation schemes in solar cells. AlOx films contain negative charges and therefore generate an accumulation layer on p-type silicon surfaces, which is very favorable for the rear side of p-type silicon solar cells as well as the p+-emitter at the front side of n-type silicon solar cells. However, it has been reported that quality of an interfacial silicon sub-oxide layer (SiOx), which is usually observed during deposition of AlOx on Silicon, strongly impacts the silicon/AlOx interface passivation properties [1]. The present work demonstrates that a convenient way to control the interface is to form thin wet chemical oxides of high quality prior to the deposition of AlOx/a-SiNx:H stacks by the plasma enhanced chemical vapor deposition (PECVD).

Czochralski and mono-like p-type and n-type silicon solar cells: Relationship between strain and stress induced by the back contact, and photovoltaic performance

2015 ◽  
Vol 135 ◽  
pp. 17-21 ◽  
Author(s):  
Thu Nhi Tran Thi ◽  
Sébastien Dubois ◽  
José Baruchel ◽  
Nicolas Enjalbert ◽  
Bruno Fernandez ◽  
...  
Keyword(s):  
Solar Cells ◽  
Photovoltaic Performance ◽  
Silicon Solar Cells ◽  
Back Contact ◽  
Type Silicon ◽  
P Type

Back-junction back-contact n-type silicon solar cells with screen-printed aluminum-alloyed emitter

2010 ◽  
Vol 96 (26) ◽  
pp. 263507 ◽  
Author(s):  
Robert Bock ◽  
Susanne Mau ◽  
Jan Schmidt ◽  
Rolf Brendel
Keyword(s):  
Solar Cells ◽  
Silicon Solar Cells ◽  
Back Contact ◽  
Type Silicon ◽  
Screen Printed

A technique for field effect surface passivation for silicon solar cells

2014 ◽  
Vol 104 (23) ◽  
pp. 232903 ◽  
Author(s):  
Ruy S. Bonilla ◽  
Peter R. Wilshaw
Keyword(s):  
Solar Cells ◽  
Field Effect ◽  
Surface Passivation ◽  
Silicon Solar Cells

Fabrication and Modeling of High-Efficiency Front Junction N-Type Silicon Solar Cells With Tunnel Oxide Passivating Back Contact

2017 ◽  
Vol 7 (5) ◽  
pp. 1236-1243 ◽  
Author(s):  
Ajeet Rohatgi ◽  
Brian Rounsaville ◽  
Young-Woo Ok ◽  
Andrew M. Tam ◽  
Francesco Zimbardi ◽  
...  
Keyword(s):  
Solar Cells ◽  
High Efficiency ◽  
Silicon Solar Cells ◽  
Back Contact ◽  
Type Silicon
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