Effects of back contact resistance, depletion width and relaxation time distributions in admittance spectroscopy of CZTSe devices

The temperature dependence of Ohmic contacts to GaN devices is investigated in this paper via by measuring TLM contact resistances TLM vs Tas a function of temperature. measurements. In particular, the two types of Ohmic contacts are considered: (1) Contacts to highly doped implanted regions (such as the MOSFET drain/source contacts or the back contact of Schottky diodes) and (2) contacts to the 2 dimensional electron gas (2DEG) of an AlGaN/GaN heterojunction.

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Laser firing in silicon heterojunction interdigitated back contact architecture for low contact resistance

Solar Energy Materials and Solar Cells ◽

10.1016/j.solmat.2019.110201 ◽

2019 ◽

Vol 203 ◽

pp. 110201 ◽

Cited By ~ 4

Author(s):

Siddhartha Garud ◽

Cham Thi Trinh ◽

Holger Rhein ◽

Sven Kühnapfel ◽

Stefan Gall ◽

...

Keyword(s):

Contact Resistance ◽

Back Contact ◽

Laser Firing

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Admittance spectroscopy on single-crystal Cu2ZnSnSe4 solar cells: Back-contact effects and metastabilities

Journal of Applied Physics ◽

10.1063/5.0020421 ◽

2020 ◽

Vol 128 (14) ◽

pp. 143102

Author(s):

Michael A. Lloyd ◽

Austin G. Kuba ◽

Brian E. McCandless ◽

Robert Birkmire

Keyword(s):

Solar Cells ◽

Single Crystal ◽

Admittance Spectroscopy ◽

Back Contact ◽

Contact Effects

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Al/Si back contact with improved resistivity and contact resistance by an optimized RTP temperature-time profile

2008 33rd IEEE Photovolatic Specialists Conference ◽

10.1109/pvsc.2008.4922681 ◽

2008 ◽

Cited By ~ 1

Author(s):

M. Muehlbauer ◽

V. Gazuz ◽

R. Auer ◽

T. Mueller ◽

W. R. Fahrner

Keyword(s):

Contact Resistance ◽

Time Profile ◽

Back Contact ◽

Temperature Time

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Admittance spectroscopy characterize graphite paste for back contact of CdTe thin film solar cells

Science China Technological Sciences ◽

10.1007/s11431-010-4032-2 ◽

2010 ◽

Vol 53 (9) ◽

pp. 2337-2341 ◽

Cited By ~ 7

Author(s):

XuLin He ◽

JingQuan Zhang ◽

LiangHuan Feng ◽

LiLi Wu ◽

Wei Li ◽

...

Keyword(s):

Thin Film ◽

Solar Cells ◽

Thin Film Solar Cells ◽

Admittance Spectroscopy ◽

Back Contact ◽

Cdte Thin Film

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Microstructural Characterization of Au-Ge-Ni based ohmic contacts to GaAs/AlGaAs modfet device

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100126433 ◽

1987 ◽

Vol 45 ◽

pp. 326-327

Author(s):

A.K. Rai ◽

A.K. Petford-Long ◽

A. Ezis ◽

D.W. Langer

Keyword(s):

Contact Resistance ◽

Ohmic Contact ◽

Ohmic Contacts ◽

Microstructural Characterization ◽

Almost Everywhere ◽

Spacer Layer ◽

Good Contact ◽

The Relationship ◽

Lower Contact

Considerable amount of work has been done in studying the relationship between the contact resistance and the microstructure of the Au-Ge-Ni based ohmic contacts to n-GaAs. It has been found that the lower contact resistivity is due to the presence of Ge rich and Au free regions (good contact area) in contact with GaAs. Thus in order to obtain an ohmic contact with lower contact resistance one should obtain a uniformly alloyed region of good contact areas almost everywhere. This can possibly be accomplished by utilizing various alloying schemes. In this work microstructural characterization, employing TEM techniques, of the sequentially deposited Au-Ge-Ni based ohmic contact to the MODFET device is presented.The substrate used in the present work consists of 1 μm thick buffer layer of GaAs grown on a semi-insulating GaAs substrate followed by a 25 Å spacer layer of undoped AlGaAs.

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