scholarly journals Laser firing in silicon heterojunction interdigitated back contact architecture for low contact resistance

2019 ◽  
Vol 203 ◽  
pp. 110201 ◽  
Author(s):  
Siddhartha Garud ◽  
Cham Thi Trinh ◽  
Holger Rhein ◽  
Sven Kühnapfel ◽  
Stefan Gall ◽  
...  
Keyword(s):  
Contact Resistance ◽  
Back Contact ◽  
Laser Firing

Analysis of a-Si:H/TCO contact resistance for the Si heterojunction back-contact solar cell

2014 ◽  
Vol 120 ◽  
pp. 412-416 ◽  
Author(s):  
Seung-Yoon Lee ◽  
Hongsik Choi ◽  
Hongmei Li ◽  
Kwangsun Ji ◽  
Seunghoon Nam ◽  
...  
Keyword(s):  
Solar Cell ◽  
Contact Resistance ◽  
Back Contact

Ohmic Contact Resistance to GaN Devices Dependence with on Temperature for GaN Devices T

2011 ◽  
Vol 679-680 ◽  
pp. 816-819 ◽  
Author(s):  
Amador Pérez-Tomás ◽  
A. Fontserè ◽  
Marcel Placidi ◽  
N. Baron ◽  
Sébastien Chenot ◽  
...  
Keyword(s):  
Contact Resistance ◽  
Temperature Dependence ◽  
Ohmic Contact ◽  
Ohmic Contacts ◽  
Schottky Diodes ◽  
Electron Gas ◽  
Temperature Measurements ◽  
Back Contact ◽  
Dimensional Electron ◽  
Dimensional Electron Gas

The temperature dependence of Ohmic contacts to GaN devices is investigated in this paper via by measuring TLM contact resistances TLM vs Tas a function of temperature. measurements. In particular, the two types of Ohmic contacts are considered: (1) Contacts to highly doped implanted regions (such as the MOSFET drain/source contacts or the back contact of Schottky diodes) and (2) contacts to the 2 dimensional electron gas (2DEG) of an AlGaN/GaN heterojunction.

Microstructural Characterization of Au-Ge-Ni based ohmic contacts to GaAs/AlGaAs modfet device

1987 ◽  
Vol 45 ◽  
pp. 326-327
Author(s):  
A.K. Rai ◽  
A.K. Petford-Long ◽  
A. Ezis ◽  
D.W. Langer
Keyword(s):  
Contact Resistance ◽  
Ohmic Contact ◽  
Ohmic Contacts ◽  
Microstructural Characterization ◽  
Almost Everywhere ◽  
Spacer Layer ◽  
Good Contact ◽  
The Relationship ◽  
Lower Contact

Considerable amount of work has been done in studying the relationship between the contact resistance and the microstructure of the Au-Ge-Ni based ohmic contacts to n-GaAs. It has been found that the lower contact resistivity is due to the presence of Ge rich and Au free regions (good contact area) in contact with GaAs. Thus in order to obtain an ohmic contact with lower contact resistance one should obtain a uniformly alloyed region of good contact areas almost everywhere. This can possibly be accomplished by utilizing various alloying schemes. In this work microstructural characterization, employing TEM techniques, of the sequentially deposited Au-Ge-Ni based ohmic contact to the MODFET device is presented.The substrate used in the present work consists of 1 μm thick buffer layer of GaAs grown on a semi-insulating GaAs substrate followed by a 25 Å spacer layer of undoped AlGaAs.

TEM Studies and Contact Resistance of Au/Ni/Ti/Ta/n-GaN Ohmic Contacts

2003 ◽  
Vol 764 ◽  
Author(s):  
D.N. Zakharov ◽  
Z. Liliental-Weber ◽  
A. Motayed ◽  
S.N. Mohammad
Keyword(s):  
Contact Resistance ◽  
Ohmic Contacts ◽  
High Resolution Electron Microscopy ◽  
X Ray ◽  
Electron Energy Loss Spectrometry ◽  
Resolution Electron ◽  
Order Of Magnitude ◽  
Contact Surfaces ◽  
Electron Energy Loss ◽  
Magnitude Difference

AbstractOhmic Ta/Ti/Ni/Au contacts to n-GaN have been studied using high resolution electron microscopy (HREM), energy dispersive X-ray spectrometry (EDX) and electron energy loss spectrometry (EELS). Two different samples were used: A - annealed at 7500C withcontact resistance 5×10-6 Ω cm2 and B-annealed at 7750C with contact resistance 6×10-5 Ω cm2. Both samples revealed extensive in- and out-diffusion between deposited layers with some consumption ofGaNlayerand formation of TixTa1-xN50 (0<x<25) at the GaN interface. Almost an order of magnitude difference in contact resistances can be attributed to structure and chemical bonding of Ti-O layers formed on the contact surfaces.

Influence of Arc Discharge on Contact Resistance of AgNi Contacts for Electromagnetic Contactors

2012 ◽  
Vol E95.C (9) ◽  
pp. 1531-1534 ◽  
Author(s):  
Kiyoshi YOSHIDA ◽  
Koichiro SAWA ◽  
Kenji SUZUKI ◽  
Masaaki WATANABE
Keyword(s):  
Contact Resistance ◽  
Arc Discharge
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