High temperature InGaN solar cell modeling

Author(s):  
Y. Fang ◽  
D. Vasileska ◽  
C. Honsberg ◽  
S. M. Goodnick
Author(s):  
Christophe Allebe ◽  
C. Ballif ◽  
Juan J. Diaz Leon ◽  
Andrea Ingenito ◽  
Antoine Descoeudres ◽  
...  

2009 ◽  
Vol 156-158 ◽  
pp. 387-393 ◽  
Author(s):  
Jasmin Hofstetter ◽  
Jean F. Lelièvre ◽  
Carlos del Cañizo ◽  
Antonio Luque

The eect of slow cooling after dierent high temperature treatments on the in- terstitial iron concentration and on the electron lifetime of p-type mc-Si wafers has been in- vestigated. The respective impacts of internal relaxation gettering and external segregation gettering of metal impurities during an extended phosphorous diusion gettering are studied. It is shown that the enhanced reduction of interstitial Fe during extended P-gettering is due to an enhanced segregation gettering while faster impurities like Cu and Ni are possibly reduced due to an internal gettering eect.


2013 ◽  
Vol 1493 ◽  
pp. 11-22 ◽  
Author(s):  
Lewis M. fraas ◽  
Kuanrong Qiu

ABSTRACTA high temperature ceramic selective emitter for thermophotovoltaic (TPV) electric generators is described with a spectral match to GaSb IR cells. While solar cells generate electricity quietly and are lightweight, traditional solar cells are used with sunlight and only generate electricity during the day. Workers at JX Crystals invented the GaSb IR cell as a booster cell to demonstrate a solar cell conversion efficiency of 35%. JX Crystals now makes these IR cells. In TPV, these cells can potentially be used with flame heated ceramic emitters to generate electricity quietly day and night. One of the most important requirements for TPV is a good spectral match between the ceramic IR emitted and the IR PV cells. The first problem is to find, demonstrate, and integrate a doped ceramic IR emitter with a spectral match to these GaSb cells. Recently, nickel oxide and cobalt oxide doped MgO-based ceramics have been shown experimentally and theoretically to have spectral selectivity but no attempts have been made to integrate these ceramic IR emitters into a fully operational TPV generator. Herein, we review the history of TPV and note that a key to future progress will be the integration of an appropriate ceramic emitter with cells and a burner to demonstrate an operational TPV generator. Integrating TPV into a residential boiler is discussed as a potential future large volume commercial market.


2013 ◽  
Vol 684 ◽  
pp. 312-316 ◽  
Author(s):  
Sheng Po Chang

We reported the spin-on Zincsilicafilm dopant content of the diffusion process and the formation of the p+ layer were applied to fabricate GaAs solar cells and their characteristics were investigated. The p-n junction was formed by a thermal furnace from the diffusion of zinc into the GaAs substrate. It was found that the GaAs substrate must be covered by a 100-nm-thick SiO2 layer. This reduced the damage to the GaAs substrate surface morphology that occurred during high temperature treatment and made the cleaning of the residual solvate on the surface easier


2006 ◽  
Vol 90 (12) ◽  
pp. 1797-1814 ◽  
Author(s):  
R. Tala-Ighil ◽  
M. Boumaour ◽  
M.S. Belkaïd ◽  
A. Maallemi ◽  
K. Melhani ◽  
...  

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