About the scatter of displacement damage and its consequence on the NIEL scaling approach

2018 ◽  
Author(s):  
C. Inquimbert ◽  
T. Nuns
Keyword(s):  
Displacement Damage

Atomistic simulation of displacement damage and effective nonionizing energy loss in InAs

2021 ◽  
Vol 5 (3) ◽  
Author(s):  
Nanjun Chen ◽  
Danhong Huang ◽  
Eric R. Heller ◽  
David A. Cardimona ◽  
Fei Gao
Keyword(s):  
Energy Loss ◽  
Atomistic Simulation ◽  
Displacement Damage

Investigating Heavy Ion Effects on 14nm-Process FinFETs: Displacement Damage Versus Total Ionizing Dose

2021 ◽  
pp. 1-1
Author(s):  
Madeline G. Esposito ◽  
Jack E. Manuel ◽  
Aymeric Privat ◽  
T. Patrick Xiao ◽  
Diana Garland ◽  
...  
Keyword(s):  
Heavy Ion ◽  
Total Ionizing Dose ◽  
Displacement Damage ◽  
Ion Effects

scholarly journals Total Dose Effects on 4H-SiC Bipolar Junction Transistors

2017 ◽  
Vol 897 ◽  
pp. 579-582
Author(s):  
Sethu Saveda Suvanam ◽  
Luigia Lanni ◽  
Bengt Gunnar Malm ◽  
Carl Mikael Zetterling ◽  
Anders Hallén
Keyword(s):  
Total Dose ◽  
Detailed Analysis ◽  
Surface Recombination ◽  
Current Gain ◽  
Bipolar Junction Transistors ◽  
Displacement Damage ◽  
Base Current ◽  
Dose Effects ◽  
Order Of Magnitude ◽  
Total Dose Effects

In this work, total dose effects on 4H-SiC bipolar junction transistors (BJT) are investigated. Three 4H-SiC NPN BJT chips are irradiated with 3MeV protons with a dose of 1×1011, 1×1012 and 1×1013 cm-2, respectively. From the measured reciprocal current gain it is observed that 4H-SiC NPN BJT exposed to protons suffer both displacement damage and ionization, whereas, a traditional Si BJT suffers mainly from displacement damage. Furthermore, bulk damage introduction rates for SiC BJT were extracted to be 3.3×10-15 cm2, which is an order of magnitude lower compared to reported Si values. Finally, from detailed analysis of the base current at low injection levels, it is possible to distinguish when surface recombination leakage is dominant over bulk recombination.

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