Surface and displacement damage engineering on CdSe nanocrystalline thin film by swift heavy Ag ions: A theoretical investigation by SRIM/TRIM package

Vacuum ◽  
2021 ◽  
pp. 110293
Author(s):  
Debojyoti Nath ◽  
Ratan Das
Optik ◽  
2018 ◽  
Vol 171 ◽  
pp. 347-355 ◽  
Author(s):  
G.E. Moreno Morales ◽  
M.E. Araiza Garcia ◽  
S. Cruz Cruz ◽  
B. Rebollo Plata ◽  
O. Portillo Moreno ◽  
...  

2018 ◽  
Vol 117 ◽  
pp. 418-422 ◽  
Author(s):  
Irina Plesco ◽  
Mircea Dragoman ◽  
Julian Strobel ◽  
Lidia Ghimpu ◽  
Fabian Schütt ◽  
...  

2000 ◽  
Vol 36 (5) ◽  
pp. 2656-2659 ◽  
Author(s):  
K.H. Kim ◽  
H.W. Choi ◽  
J. Kim ◽  
S.R. Kim ◽  
K.Y. Kim ◽  
...  

2013 ◽  
Vol 756 ◽  
pp. 54-58 ◽  
Author(s):  
Mustafa Zaien ◽  
Naser Mahmoud Ahmed ◽  
Hassan Zainuriah

A nanocrystalline CdO thin film was successfully synthesized on p-type silicon substrate with approximately 370 nm thickness by a vapor transport process (solid-vapor deposition) for Cd powder at 1274 K with argon and oxygen flows in a tube furnace. Scanning electronmicroscopy revealed that the product was a CdO nanocrystalline. X-raydiffraction and energy dispersive X-ray techniques were used to characterize structural properties. The grown nanocrystalline thin film had a grain size of 38 nm. Photoluminescence spectroscopy was conducted to investigate the optical properties of the nanocrystalline CdO thin film. A strong emission peak was observed at 511 nm (2.43 eV), which is ascribable to the near-band-edge emission of CdO with a full-width and half maximum of approximately 124 nm. The sheet resistance and the resistivity of the CdO thin film were measured using a four-point probe; RS= 16.2 Ω/sqand ρ = 5.82×10-4Ω.cm.Carrier concentration and Hall mobility were obtained by Hall-effect measurement system; n= 1.53×1020cm-3and μH= 42.3cm2/Vs.


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