Softening of breakdown in ultra-thin gate oxide nMOSFETs at low inversion layer density

2002 ◽  
Author(s):  
S. Lombardo ◽  
F. Crupi ◽  
J.H. Stathis
Keyword(s):  
Inversion Layer ◽  
Gate Oxide ◽  
Layer Density ◽  
Thin Gate Oxide

Inversion-layer capacitance and mobility of very thin gate-Oxide MOSFET's

1986 ◽  
Vol 33 (3) ◽  
pp. 409-413 ◽  
Author(s):  
Mong-Song Liang ◽  
Jeong Yeol Choi ◽  
Ping-Keung Ko ◽  
Chenming Hu
Keyword(s):  
Inversion Layer ◽  
Gate Oxide ◽  
Thin Gate Oxide

Experimental determination of finite inversion layer thickness in thin gate oxide MOSFETS

1986 ◽  
Vol 170 (1-2) ◽  
pp. 363-369 ◽  
Author(s):  
A. Toriumi ◽  
M. Yoshimi ◽  
M. Iwase ◽  
K. Taniguchi ◽  
C. Hamaguchi
Keyword(s):  
Experimental Determination ◽  
Layer Thickness ◽  
Inversion Layer ◽  
Gate Oxide ◽  
Thin Gate Oxide

Experimental determination of finite inversion layer thickness in thin gate oxide MOSFETS

1986 ◽  
Vol 170 (1-2) ◽  
pp. A239
Author(s):  
A. Toriumi ◽  
M. Yoshimi ◽  
M. Iwase ◽  
K. Taniguchi ◽  
C. Hamaguchi
Keyword(s):  
Experimental Determination ◽  
Layer Thickness ◽  
Inversion Layer ◽  
Gate Oxide ◽  
Thin Gate Oxide

Low temperature operation of ultra-thin gate oxide sub-0.1 μm MOSFETs

2002 ◽  
Vol 12 (3) ◽  
pp. 57-60 ◽  
Author(s):  
B. Cretu ◽  
F. Balestra ◽  
G. Ghibaudo ◽  
G. Guégan
Keyword(s):  
Low Temperature ◽  
Gate Oxide ◽  
Thin Gate Oxide
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