Characterization of Global Inversion Layer in Thin-Gate-Oxide Deep-Submicron p-MOSFETs

Solid-State Electronics ◽

10.1016/s0038-1101(97)00204-9 ◽

1998 ◽

Vol 42 (3) ◽

pp. 401-404

Author(s):

Bin Yu ◽

Kiyotaga Imai ◽

Chenming Hu

Keyword(s):

Inversion Layer ◽

Deep Submicron ◽

Thin Gate Oxide

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Characterization of leakage current in thin gate oxide subjected to 10 keV X-ray irradiation

IEEE Transactions on Electron Devices ◽

10.1109/16.824744 ◽

2000 ◽

Vol 47 (3) ◽

pp. 650-652 ◽

Author(s):

C.H. Ling ◽

C.H. Ang ◽

D.S. Ang

Keyword(s):

Leakage Current ◽

X Ray ◽

Thin Gate Oxide

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Impact of tunnel currents and channel resistance on the characterization of channel inversion layer charge and polysilicon-gate depletion of sub-20-Å gate oxide MOSFETs

IEEE Transactions on Electron Devices ◽

10.1109/16.777153 ◽

1999 ◽

Vol 46 (8) ◽

pp. 1650-1655 ◽

Author(s):

K. Ahmed ◽

E. Ibok ◽

G.C.-F. Yeap ◽

Qi Xiang ◽

B. Ogle ◽

...

Keyword(s):

Inversion Layer ◽

Layer Charge ◽

Channel Resistance ◽

Polysilicon Gate

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Electrical characterization of inversion layer carrier profile in deep-submicron p-MOSFETs

Semiconductor Science and Technology ◽

10.1088/0268-1242/12/11/005 ◽

1997 ◽

Vol 12 (11) ◽

pp. 1355-1357 ◽

Author(s):

Bin Yu ◽

Kiyotaga Imai ◽

Chenming Hu

Keyword(s):

Inversion Layer ◽

Electrical Characterization ◽

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Softening of breakdown in ultra-thin gate oxide nMOSFETs at low inversion layer density

2001 IEEE International Reliability Physics Symposium Proceedings. 39th Annual (Cat. No.00CH37167) ◽

10.1109/relphy.2001.922896 ◽

2002 ◽

Author(s):

S. Lombardo ◽

F. Crupi ◽

J.H. Stathis

Keyword(s):

Inversion Layer ◽

Layer Density ◽

Thin Gate Oxide

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Fabrication and characterization of sub-micron thin gate oxide p-channel transistors with p+ polysilicon gates

10.1109/iedm.1985.190933 ◽

1985 ◽

Author(s):

D.W. Wenocur ◽

K.M. Cham ◽

J. Lin ◽

C.K. Lau ◽

H.S. Fu

Keyword(s):

Fabrication And Characterization ◽

Thin Gate Oxide

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He plus remote plasma nitridation of ultra-thin gate oxide for deep submicron CMOS technology applications

Electronics Letters ◽

10.1049/el:20010515 ◽

2001 ◽

Vol 37 (12) ◽

pp. 788 ◽

Author(s):

Shyh-Fann Ting ◽

Yean-Kuen Fang ◽

Chien-Hao Chen ◽

Chih-Wei Yang ◽

Mo-Chiun Yu ◽

...

Keyword(s):

Cmos Technology ◽

Deep Submicron ◽

Remote Plasma ◽

Plasma Nitridation ◽

Technology Applications ◽

Submicron Cmos ◽

Thin Gate Oxide

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On-chip charge pumping method for characterization of interface states of ultra thin gate oxide in nano cmos technology

IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest. ◽

10.1109/iedm.2005.1609449 ◽

2006 ◽

Author(s):

Hee-Hwan Ji ◽

Yong-Goo Kim ◽

In-Shik Han ◽

Kyung-Min Kim ◽

Jin-Suk Wang ◽

...

Keyword(s):

Cmos Technology ◽

Interface States ◽

Charge Pumping ◽

On Chip ◽

Thin Gate Oxide

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Inversion-layer capacitance and mobility of very thin gate-Oxide MOSFET's

IEEE Transactions on Electron Devices ◽

10.1109/t-ed.1986.22502 ◽

1986 ◽

Vol 33 (3) ◽

pp. 409-413 ◽

Author(s):

Mong-Song Liang ◽

Jeong Yeol Choi ◽

Ping-Keung Ko ◽

Chenming Hu

Keyword(s):

Inversion Layer ◽

Thin Gate Oxide

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Statistical analysis of quantized inversion layer in MOS devices with ultra-thin gate oxide and high substrate doping levels

Proceedings 2000 IEEE Hong Kong Electron Devices Meeting (Cat. No.00TH8503) ◽

10.1109/hkedm.2000.904231 ◽

2002 ◽

Author(s):

Yutao Ma ◽

Litian Liu ◽

Lilin Tian ◽

Zhijian Li

Keyword(s):

Statistical Analysis ◽

Inversion Layer ◽

High Substrate ◽

Mos Devices ◽

Thin Gate Oxide ◽

Substrate Doping

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Characterization of inversion layer carrier profile in deep-submicron p-MOSFETs

1997 55th Annual Device Research Conference Digest DRC-97 ◽

10.1109/drc.1997.612460 ◽

2002 ◽

Author(s):

Bin Yu ◽

K. Imai ◽

Chenming Hu

Keyword(s):

Inversion Layer ◽

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