Experimental determination of finite inversion layer thickness in thin gate oxide MOSFETS

Layer Thickness ◽

Inversion Layer ◽

Gate Oxide ◽

Experimental determination of finite inversion layer thickness in thin gate oxide MOSFETS

Surface Science Letters ◽

10.1016/0167-2584(86)90577-3 ◽

1986 ◽

Vol 170 (1-2) ◽

pp. A239

Author(s):

A. Toriumi ◽

M. Yoshimi ◽

M. Iwase ◽

K. Taniguchi ◽

C. Hamaguchi

Keyword(s):

Layer Thickness ◽

Inversion Layer ◽

Gate Oxide ◽

2001 IEEE International Reliability Physics Symposium Proceedings. 39th Annual (Cat. No.00CH37167) ◽

Softening of breakdown in ultra-thin gate oxide nMOSFETs at low inversion layer density

10.1109/relphy.2001.922896 ◽

2002 ◽

Cited By ~ 8

Author(s):

S. Lombardo ◽

F. Crupi ◽

J.H. Stathis

Keyword(s):

Inversion Layer ◽

Gate Oxide ◽

Layer Density ◽

Simulation and experimental determination of the macro-scale layer thickness distribution of electrodeposited Cu-line patterns on a wafer substrate

Journal of Applied Electrochemistry ◽

10.1007/s10800-005-2321-4 ◽

2005 ◽

Vol 35 (6) ◽

pp. 589-598 ◽

Cited By ~ 9

Author(s):

Karen Pantleon ◽

Bart Van Den Bossche ◽

Marius Purcar ◽

Paolo Bariani ◽

Gert Floridor

Keyword(s):

Layer Thickness ◽

Thickness Distribution ◽

Scale Layer ◽

Macro Scale ◽

Wafer Substrate ◽

Line Patterns

Characterization of Global Inversion Layer in Thin-Gate-Oxide Deep-Submicron p-MOSFETs

Solid-State Electronics ◽

10.1016/s0038-1101(97)00204-9 ◽

1998 ◽

Vol 42 (3) ◽

pp. 401-404

Author(s):

Bin Yu ◽

Kiyotaga Imai ◽

Chenming Hu

Keyword(s):

Inversion Layer ◽

Gate Oxide ◽

Deep Submicron ◽

Experimental determination of the frequency factor of thermal annealing processes in metal–oxide–semiconductor gate-oxide structures

Journal of Applied Physics ◽

10.1063/1.365721 ◽

1997 ◽

Vol 82 (8) ◽

pp. 4102-4107 ◽

Cited By ~ 20

Author(s):

F. Saigné ◽

L. Dusseau ◽

L. Albert ◽

J. Fesquet ◽

J. Gasiot ◽

...

Keyword(s):

Metal Oxide ◽

Thermal Annealing ◽

Gate Oxide ◽

Frequency Factor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor

Determination of the Spatial Resolution Function in Energy Filtered TEM and Application to Thin Gate Oxide Measurements at 80 eV Energy Loss

Microscopy and Microanalysis ◽

10.1017/s1431927604887737 ◽

2004 ◽

Vol 10 (S02) ◽

pp. 578-579

Author(s):

S. Jullian ◽

R. Pantel ◽

M. Juhel ◽

L.F.T Kwakman ◽

G. Vincent

Keyword(s):

Energy Loss ◽

Spatial Resolution ◽

Gate Oxide ◽

Resolution Function ◽

Extended abstract of a paper presented at Microscopy and Microanalysis 2004 in Savannah, Georgia, USA, August 1–5, 2004.

Prediction and experimental determination of the layer thickness in SIMS depth profiling of Ge/Si multilayers: Effect of preferential sputtering and atomic mixing

Applied Surface Science ◽

10.1016/j.apsusc.2019.03.223 ◽

2019 ◽

Vol 481 ◽

pp. 1103-1108 ◽

Cited By ~ 1

Author(s):

S.Y. Lian ◽

K.J. Kim ◽

T.G. Kim ◽

S. Hofmann ◽

J.Y. Wang

Keyword(s):

Layer Thickness ◽

Depth Profiling ◽

Preferential Sputtering ◽

Atomic Mixing ◽

Sims Depth Profiling

Inversion-layer capacitance and mobility of very thin gate-Oxide MOSFET's

IEEE Transactions on Electron Devices ◽

10.1109/t-ed.1986.22502 ◽

1986 ◽

Vol 33 (3) ◽

pp. 409-413 ◽

Cited By ~ 121

Author(s):

Mong-Song Liang ◽

Jeong Yeol Choi ◽

Ping-Keung Ko ◽

Chenming Hu

Keyword(s):

Inversion Layer ◽

Gate Oxide ◽

Experimental determination of change in the liquid layer thickness on the heated surface by confocal sensor

EPJ Web of Conferences ◽

10.1051/epjconf/201715900011 ◽

2017 ◽

Vol 159 ◽

pp. 00011 ◽

Cited By ~ 1

Author(s):

Dmitry Feoktistov ◽

Sergey Misyura ◽

Anastasia Islamova ◽

Kseniya Batishcheva

Keyword(s):

Layer Thickness ◽

Liquid Layer ◽

Heated Surface ◽

Liquid Layer Thickness

Statistical analysis of quantized inversion layer in MOS devices with ultra-thin gate oxide and high substrate doping levels

Proceedings 2000 IEEE Hong Kong Electron Devices Meeting (Cat. No.00TH8503) ◽

10.1109/hkedm.2000.904231 ◽

2002 ◽

Author(s):

Yutao Ma ◽

Litian Liu ◽

Lilin Tian ◽

Zhijian Li

Keyword(s):

Statistical Analysis ◽

Inversion Layer ◽

Gate Oxide ◽

High Substrate ◽

Mos Devices ◽

Thin Gate Oxide ◽

Substrate Doping