The present understanding of this work is about to evaluate and resolve the
temperature compensation point (TCP) or zero temperature coefficient (ZTC)
point for a sub-20 nm FinFET. The sensitivity of geometry parameters on
assorted performances of Fin based device and its reliability over ample
range of temperatures i.e. 25?C to 225?C is reviewed to extend the
benchmark of device scalability. The impact of fin height (HFin), fin width
(WFin), and temperature (T) on immense performance metrics including on-off
ratio (Ion/Ioff), transconductance (gm), gain (AV), cut-off frequency (fT),
static power dissipation (PD), energy (E), energy delay product (EDP), and
sweet spot (gmfT/ID) of the FinFET is successfully carried out by
commercially available TCAD simulator SentaurusTM from Synopsis Inc.