0.5 V 19 nW Smart Temperature Sensor for Ultra-Low-Power CMOS Applications

Author(s):  
Daniel C. Lott ◽  
Dalton Martini Colombo
2015 ◽  
Vol 11 (4) ◽  
pp. 504-508
Author(s):  
Xiang Wu ◽  
Fangming Deng ◽  
Yigang He ◽  
Bing Li

2009 ◽  
Vol 30 (4) ◽  
pp. 045003 ◽  
Author(s):  
Xu Conghui ◽  
Gao Peijun ◽  
Che Wenyi ◽  
Tan Xi ◽  
Yan Na ◽  
...  

2013 ◽  
Vol 44 (12) ◽  
pp. 1145-1153 ◽  
Author(s):  
Yanhan Zeng ◽  
Yirong Huang ◽  
Yunling Luo ◽  
Hong-Zhou Tan

Proceedings ◽  
2018 ◽  
Vol 2 (13) ◽  
pp. 973
Author(s):  
Marco Crescentini ◽  
Cinzia Tamburini ◽  
Luca Belsito ◽  
Aldo Romani ◽  
Alberto Roncaglia ◽  
...  

This paper presents an ultra-low power, silicon-integrated readout for resonant MEMS strain sensors. The analogue readout implements a negative-resistance amplifier based on first-generation current conveyors (CCI) that, thanks to the reduced number of active elements, targets both low-power and low-noise. A prototype of the circuit was implemented in a 0.18-µm technology occupying less than 0.4 mm2 and consuming only 9 µA from the 1.8-V power supply. The prototype was earliest tested by connecting it to a resonant MEMS strain resonator.


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