The analysis of transit-time effect of bipolar base collector junction breakdown

2014 IEEE 14th Topical Meeting on Silicon Monolithic Integrated Circuits in Rf Systems ◽

10.1109/sirf.2014.6828504 ◽

2014 ◽

Author(s):

Xiaochuan Bi ◽

Django Trombley ◽

Tracey Krakowski ◽

Doug Weiser

Keyword(s):

Transit Time ◽

Time Effect ◽

Collector Junction

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Base transit time of shallow-base bipolar transistors considering velocity saturation at base-collector junction

IEEE Transactions on Electron Devices ◽

10.1109/16.123487 ◽

1992 ◽

Vol 39 (3) ◽

pp. 623-628 ◽

Author(s):

K. Suzuki ◽

N. Nakayama

Keyword(s):

Transit Time ◽

Bipolar Transistors ◽

Velocity Saturation ◽

Collector Junction

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Transit time effect in high-frequency characteristics of HBTs

1992 IEEE Microwave Symposium Digest MTT-S ◽

10.1109/mwsym.1992.187964 ◽

2003 ◽

Author(s):

S. Lee ◽

A. Gopinath

Keyword(s):

Transit Time ◽

High Frequency ◽

Frequency Characteristics ◽

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Large-Signal Analysis on Negative-Resistance Diode Due to Punch-Through-Injection and Transit-Time Effect

Japanese Journal of Applied Physics ◽

10.1143/jjap.12.423 ◽

1973 ◽

Vol 12 (3) ◽

pp. 423-433 ◽

Author(s):

Kuniyasu Kawarada ◽

Yoshihiko Mizushima

Keyword(s):

Transit Time ◽

Signal Analysis ◽

Negative Resistance ◽

Time Effect ◽

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The Transit Time Effect in a Cylindrical Diode

Journal of Applied Physics ◽

10.1063/1.1699862 ◽

1951 ◽

Vol 22 (11) ◽

pp. 1333-1339 ◽

Author(s):

Way Dong Woo

Keyword(s):

Transit Time ◽

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Shapiro delay: a frequency dependent transit time effect, not a space time effect

10.1117/12.906064 ◽

2011 ◽

Author(s):

Shahin Ghazanshahi ◽

Edward H. Dowdye, Jr.

Keyword(s):

Transit Time ◽

Time Effect ◽

Frequency Dependent

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Collector junction depletion-layer transit time model of SiGe HBT with space SiGe layer

2009 IEEE International Conference of Electron Devices and Solid-State Circuits (EDSSC) ◽

10.1109/edssc.2009.5394240 ◽

2009 ◽

Author(s):

Huiyong Hu ◽

Rui Chen ◽

Heming Zhang ◽

Jianjun Song

Keyword(s):

Transit Time ◽

Depletion Layer ◽

Sige Hbt ◽

Collector Junction

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The influence of the transit-time effect on propagation delay measurements by electron and photon beam techniques

Microelectronic Engineering ◽

10.1016/0167-9317(89)90099-3 ◽

1989 ◽

Vol 9 (1-4) ◽

pp. 453-456 ◽

Author(s):

D. Winkler ◽

R. Schmitt ◽

M. Brunner ◽

B. Lischke

Keyword(s):

Transit Time ◽

Propagation Delay ◽

Time Effect ◽

Photon Beam ◽

Electron And Photon

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Modeling transit time effect in multigigabit binary optical receiver systems

10.1117/12.135390 ◽

1992 ◽

Author(s):

Intesar F. Al-Ramli

Keyword(s):

Transit Time ◽

Time Effect ◽

Optical Receiver

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Plasma Instability and Terahertz Generation in HEMTs Due to Electron Transit-Time Effect

IEICE Transactions on Electronics ◽

10.1093/ietele/e89-c.7.1012 ◽

2006 ◽

Vol E89-C (7) ◽

pp. 1012-1019 ◽

Author(s):

V. RYZHII

Keyword(s):

Transit Time ◽

Plasma Instability ◽

Time Effect ◽

Terahertz Generation

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Measurements of the Transit Time Effect on Voltage Contrast in the Stroboscopic Scanning Electron Microscope

Journal of Electron Microscopy ◽

10.1093/oxfordjournals.jmicro.a050780 ◽

1990 ◽

Keyword(s):

Electron Microscope ◽

Scanning Electron Microscope ◽

Transit Time ◽

Time Effect ◽

Voltage Contrast ◽

Scanning Electron

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