A differential vertical hybrid coupler and low capacitance RF pads for millimeter-wave applications in 28 nm CMOS FDSOI

2018 ◽  
Author(s):  
Florian Voineau ◽  
Baudouin Martineau ◽  
Mathilde Sie ◽  
Anthony Ghiotto ◽  
Eric Kerherve
Keyword(s):  
Millimeter Wave ◽  
Hybrid Coupler ◽  
Low Capacitance ◽  
28 Nm

Optical single sideband millimeter-wave signal generation and transmission using 120° hybrid coupler

2018 ◽  
Vol 411 ◽  
pp. 21-26 ◽  
Author(s):  
Zhiwei Zheng ◽  
Miao Peng ◽  
Hui Zhou ◽  
Ming Chen ◽  
Leyong Jiang ◽  
...  
Keyword(s):  
Millimeter Wave ◽  
Signal Generation ◽  
Wave Signal ◽  
Single Sideband ◽  
Hybrid Coupler ◽  
Optical Single Sideband

A 22.5–27.7-GHz Fast-Lock Bang-Bang Digital PLL in 28-nm CMOS for Millimeter-Wave Communication With 220-fs RMS Jitter

2019 ◽  
Vol 2 (9) ◽  
pp. 111-114 ◽  
Author(s):  
Cheng-Hsueh Tsai ◽  
Federico Pepe ◽  
Giovanni Mangraviti ◽  
Zhiwei Zong ◽  
Jan Craninckx ◽  
...  
Keyword(s):  
Millimeter Wave ◽  
Millimeter Wave Communication ◽  
28 Nm

Analysis of a 28-nm CMOS Fast-Lock Bang-Bang Digital PLL With 220-fs RMS Jitter for Millimeter-Wave Communication

2020 ◽  
Vol 55 (7) ◽  
pp. 1854-1863
Author(s):  
Cheng-Hsueh Tsai ◽  
Zhiwei Zong ◽  
Federico Pepe ◽  
Giovanni Mangraviti ◽  
Jan Craninckx ◽  
...  
Keyword(s):  
Millimeter Wave ◽  
Millimeter Wave Communication ◽  
28 Nm

Millimeter-Wave Low-Noise Amplifier Design in 28-nm Low-Power Digital CMOS

2015 ◽  
Vol 63 (6) ◽  
pp. 1910-1922 ◽  
Author(s):  
David Fritsche ◽  
Gregor Tretter ◽  
Corrado Carta ◽  
Frank Ellinger
Keyword(s):  
Low Power ◽  
Millimeter Wave ◽  
Low Noise ◽  
Low Noise Amplifier ◽  
Digital Cmos ◽  
Amplifier Design ◽  
Noise Amplifier ◽  
28 Nm

Planar 180° hybrid coupler with non-interspersed ports for millimeter-wave applications

2019 ◽  
Vol 12 (4) ◽  
pp. 293-302
Author(s):  
Jaber Moghaddasi ◽  
Ke Wu
Keyword(s):  
Millimeter Wave ◽  
Structural Parameters ◽  
Wave Frequency ◽  
Superior Performance ◽  
Matrix Approach ◽  
Automotive Radar ◽  
Excellent Candidate ◽  
Hybrid Coupler ◽  
77 Ghz ◽  
Good Agreement

AbstractThis paper presents a simple topology of 180° hybrid coupler with non-interspersed inputs and outputs, as opposed to the conventional rat-race topology. Such hybrid coupler topologies with inputs located on one side and outputs at the opposite side simplify the design of signal routings and module packaging when integrated with other circuits and components. It also relaxes the necessity of using auxiliary compensating components such as tapers, jumpers, and crossovers. The proposed coupler topology is theoretically analyzed through a T-matrix approach. The analysis comes up with design equations and diagrams that help choose the structural parameters for the desired specification. The simplicity and also the immunity against intrinsic parasitic effects within the proposed topology make it an excellent candidate for operation over any RF and millimeter-wave frequency bands, for applications such as automotive radar or E-band backhaul radio. To this end, a coupler based on the proposed scheme is realized for operation over 77 GHz and assessed through on-wafer measurements. Good agreement of the measured results with the simulated and analytical counterparts demonstrates the superior performance of the proposed 180° hybrid coupler.

Air-Bridge Electron-Beam Lithography for Coplanar Millimeter Wave Circuits

1992 ◽  
Vol 260 ◽  
Author(s):  
William H. Haydl ◽  
R. J. Bojko ◽  
L. F. Eastman
Keyword(s):  
Electron Beam ◽  
Integrated Circuits ◽  
Millimeter Wave ◽  
Electron Beam Lithography ◽  
Ultrahigh Frequency ◽  
Turn Around Time ◽  
Low Capacitance ◽  
Beam Technique ◽  
Millimeter Wave Circuits

ABSTRACTIn the development of air bridges for low capacitance crossovers, resists of 3–6μm thickness a e needed, which calls for special alignment techniques. A technique has been developed for an air bridge tec nology, which is realized entirely by electron beam lithography. Such an all-electron-beam technique for sub-micron devices and ultrahigh frequency circuits, results in a fast turn-around-time in the development of integrated circuits.Gold plated air bridges with 20 to 120 pm span, 5–60 μm width, 2.6 pm height, and 2–4 μm thickness, were realized on GaAs and InP.

High-Q MOS Varactors for Millimeter-Wave Applications in CMOS 28-nm FDSOI

2015 ◽  
Vol 36 (2) ◽  
pp. 87-89 ◽  
Author(s):  
Thomas Quemerais ◽  
Daniel Gloria ◽  
Dominique Golanski ◽  
Simon Bouvot
Keyword(s):  
Millimeter Wave ◽  
High Q ◽  
28 Nm
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