Self-consistent simulation of quantization effects and tunneling current in ultra-thin gate oxide MOS devices
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2003 ◽
Vol 125
(3-4)
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pp. 219-223
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2014 ◽
Vol 778-780
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pp. 440-443
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2015 ◽
Vol 821-823
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pp. 753-756
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2009 ◽
Vol 53
(11)
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pp. 1191-1197
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