Influence of Gate-to-Source Tunneling Current on Hot-Carrier Reliability Testing in MOSFETs with Ultra-Thin Gate Oxide

2002 ◽  
Author(s):  
Jone F. Chen ◽  
Chih-Pin Tsao ◽  
T.-C. Ong
Keyword(s):  
Tunneling Current ◽  
Gate Oxide ◽  
Reliability Testing ◽  
Hot Carrier ◽  
Thin Gate Oxide

scholarly journals Hot-carrier-induced degradation of drain current hysteresis and transients in thin gate oxide floating body partially depleted SOI nMOSFETs

2006 ◽  
Vol 46 (9-11) ◽  
pp. 1657-1663 ◽  
Author(s):  
J.M. Rafí ◽  
E. Simoen ◽  
K. Hayama ◽  
A. Mercha ◽  
F. Campabadal ◽  
...  
Keyword(s):  
Drain Current ◽  
Gate Oxide ◽  
Floating Body ◽  
Hot Carrier ◽  
Thin Gate Oxide

Hot-Carrier Stress Effects on GIDL and SILC in 90nm LDD-MOSFET with Ultra-Thin Gate Oxide

2009 ◽  
Vol 26 (1) ◽  
pp. 017304 ◽  
Author(s):  
Hu Shi-Gang ◽  
Hao Yue ◽  
Ma Xiao-Hua ◽  
Cao Yan-Rong ◽  
Chen Chi ◽  
...  
Keyword(s):  
Gate Oxide ◽  
Hot Carrier ◽  
Stress Effects ◽  
Hot Carrier Stress ◽  
Thin Gate Oxide

Gate Tunneling Current Predicting Model for Scaled NMOSFET Devices

2013 ◽  
Vol 772 ◽  
pp. 422-426
Author(s):  
Zhi Chao Zhao ◽  
Tie Feng Wu ◽  
Hui Bin Ma ◽  
Quan Wang ◽  
Jing Li
Keyword(s):  
Tunneling Current ◽  
Gate Oxide ◽  
Oxide Thickness ◽  
Integral Approach ◽  
Predicting Model ◽  
Mos Devices ◽  
Gate Oxide Thickness ◽  
Novel Theory ◽  
Gate Tunneling ◽  
Thin Gate Oxide

With the scaling of MOS devices, gate tunneling current increases significantly due to thinner gate oxides, and static characteristics of devices and circuit are severely affected by the presence of gate tunneling currents. In this paper, a novel theory gate tunneling current predicting model using integral approach is presented in ultra-thin gate oxide MOS devices that tunneling current changes with gate-oxide thickness. To analyze quantitatively the behaviors of scaled MOS devices in the effects of gate tunneling current and predict the trends, the characteristics of MOS devices are studied in detail using HSPICE simulator. The simulation results in BSIM4 model well agree with the model proposed. The theory and experiment data are contributed to the VLSI circuit design in the future.

Hot-carrier degradation for 90 nm gate length LDD-NMOSFET with ultra-thin gate oxide under low gate voltage stress

2007 ◽  
Vol 16 (3) ◽  
pp. 821-825
Author(s):  
Chen Hai-Feng ◽  
Hao Yue ◽  
Ma Xiao-Hua ◽  
Li Kang ◽  
Ni Jin-Yu
Keyword(s):  
Gate Voltage ◽  
Gate Oxide ◽  
Gate Length ◽  
Hot Carrier ◽  
Voltage Stress ◽  
Thin Gate Oxide ◽  
Hot Carrier Degradation

Reduced hot-carrier reliability degradation of x-ray irradiated MOSFETs in a 0.25 μm CMOS technology with ultra-thin gate oxide

1993 ◽  
Vol 36 (9) ◽  
pp. 1353-1355 ◽  
Author(s):  
A. Acovic ◽  
C.C.-H. Hsu ◽  
L.C. Hsia ◽  
J.M. Aitken
Keyword(s):  
Gate Oxide ◽  
Cmos Technology ◽  
X Ray ◽  
Hot Carrier ◽  
Thin Gate Oxide

scholarly journals The TDDB Characteristics of Ultra-Thin Gate Oxide MOS Capacitors under Constant Voltage Stress and Substrate Hot-Carrier Injection

2018 ◽  
Vol 2018 ◽  
pp. 1-6
Author(s):  
Jingyu Shen ◽  
Can Tan ◽  
Rui Jiang ◽  
Wei Li ◽  
Xue Fan ◽  
...  
Keyword(s):  
Degradation Mechanism ◽  
Gate Oxide ◽  
Cmos Technology ◽  
Carrier Injection ◽  
Constant Voltage ◽  
Mos Capacitors ◽  
Hot Carrier ◽  
Hot Carrier Injection ◽  
Voltage Stress ◽  
Thin Gate Oxide

The breakdown characteristics of ultra-thin gate oxide MOS capacitors fabricated in 65 nm CMOS technology under constant voltage stress and substrate hot-carrier injection are investigated. Compared to normal thick gate oxide, the degradation mechanism of time-dependent dielectric breakdown (TDDB) of ultra-thin gate oxide is found to be different. It is found that the gate current (Ig) of ultra-thin gate oxide MOS capacitor is more likely to be induced not only by Fowler-Nordheim (F-N) tunneling electrons, but also by electrons surmounting barrier and penetrating electrons in the condition of constant voltage stress. Moreover it is shown that the time to breakdown (tbd) under substrate hot-carrier injection is far less than that under constant voltage stress when the failure criterion is defined as a hard breakdown according to the experimental results. The TDDB mechanism of ultra-thin gate oxide will be detailed. The differences in TDDB characteristics of MOS capacitors induced by constant voltage stress and substrate hot-carrier injection will be also discussed.

Hot-carrier reliability of ultra-thin gate oxide CMOS

2000 ◽  
Vol 44 (11) ◽  
pp. 2035-2044 ◽  
Author(s):  
Hisayo Sasaki Momose ◽  
Shin-ichi Nakamura ◽  
Tatsuya Ohguro ◽  
Takashi Yoshitomi ◽  
Eiji Morifuji ◽  
...  
Keyword(s):  
Gate Oxide ◽  
Hot Carrier ◽  
Thin Gate Oxide
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