Hot Carrier Effects in Deep Submicron Nmosfets

1996 ◽  
Vol 428 ◽  
Author(s):  
Abhijit Phanse ◽  
Samar Saha
Keyword(s):  
Electric Fields ◽  
Channel Length ◽  
Deep Submicron ◽  
Short Channel ◽  
Hot Carrier ◽  
Velocity Saturation ◽  
Substrate Current ◽  
Hot Carrier Effects ◽  
Saturation Effects ◽  
Channel Lengths

AbstractThis paper addresses hot-carrier related reliability issues in deep submicron silicon nMOSFET devices. In order to monitor the hot-carrier induced device degradation, the substrate current was measured for devices with varying channel lengths (20 um - 0.24 um) under various biasing conditions. Deep submicron devices experience velocity saturation of channel carriers due to extremely high lateral electric fields. To evaluate the effects of velocity saturation in the channel, the pinch-off length in the channel was extracted for all the devices of the target technology. It was observed that for very short channel devices, carriers in most of the channel experience velocity saturation and almost the entire channel gets pinched off. It is shown in this paper that for very short channel devices, the pinch-off length in the channel is limited by the effective channel length, and that velocity saturation effects are critical to the transport of channel carriers.

Effect of Channel Profile Engineering on Hot Carrier Reliability in nMOSFETs with 100 nm Channel Lengths

1997 ◽  
Vol 473 ◽  
Author(s):  
Samar K. Saha
Keyword(s):  
Supply Voltage ◽  
High Surface ◽  
Device Simulation ◽  
Oxide Thickness ◽  
Channel Length ◽  
Short Channel ◽  
Hot Carrier ◽  
Hot Carrier Effects ◽  
Doping Profiles ◽  
Substrate Concentrations

ABSTRACTHot-carrier effect was studied for different channel doping profiles in nMOSFET devices with effective channel length near 100 nm using a device simulator. The test structures for device simulation were generated using gate oxide thickness of 3 nm. The channel doping profiles used were abrupt- and graded-retrograde types with low surface and high substrate concentrations, and conventional step profiles with high surface and low substrate concentrations. For accurate device simulation, a hydrodynamic model for semiconductors was used to simulate the non-local transport phenomena in the devices. The simulation results indicate that for ultra-short channel devices, the current drivability and the hot-carrier effects depend on the shape of channel doping profiles. For a given supply voltage, the hot-carrier effects in ultra-short channel devices can be controlled by optimizing the channel doping profiles.

scholarly journals Comparative Simulation Analysis of Process Parameter Variations in 20 nm Triangular FinFET

2017 ◽  
Vol 2017 ◽  
pp. 1-8 ◽  
Author(s):  
Satyam Shukla ◽  
Sandeep Singh Gill ◽  
Navneet Kaur ◽  
H. S. Jatana ◽  
Varun Nehru
Keyword(s):  
Process Parameters ◽  
Simulation Analysis ◽  
Oxide Thickness ◽  
Channel Length ◽  
Deep Submicron ◽  
Device Structure ◽  
Short Channel ◽  
20 Nm ◽  
The Impact ◽  
Fin Shape

Technology scaling below 22 nm has brought several detrimental effects such as increased short channel effects (SCEs) and leakage currents. In deep submicron technology further scaling in gate length and oxide thickness can be achieved by changing the device structure of MOSFET. For 10–30 nm channel length multigate MOSFETs have been considered as most promising devices and FinFETs are the leading multigate MOSFET devices. Process parameters can be varied to obtain the desired performance of the FinFET device. In this paper, evaluation of on-off current ratio (Ion/Ioff), subthreshold swing (SS) and Drain Induced Barrier Lowering (DIBL) for different process parameters, that is, doping concentration (1015/cm3 to 1018/cm3), oxide thickness (0.5 nm and 1 nm), and fin height (10 nm to 40 nm), has been presented for 20 nm triangular FinFET device. Density gradient model used in design simulation incorporates the considerable quantum effects and provides more practical environment for device simulation. Simulation result shows that fin shape has great impact on FinFET performance and triangular fin shape leads to reduction in leakage current and SCEs. Comparative analysis of simulation results has been investigated to observe the impact of process parameters on the performance of designed FinFET.

Analytical and numerical study of the impact of HALOs on short channel and hot carrier effects in scaled MOSFETs

2002 ◽  
Vol 46 (3) ◽  
pp. 429-434 ◽  
Author(s):  
S. Zanchetta ◽  
A. Todon ◽  
A. Abramo ◽  
L. Selmi ◽  
E. Sangiorgi
Keyword(s):  
Numerical Study ◽  
Short Channel ◽  
Hot Carrier ◽  
Hot Carrier Effects ◽  
The Impact

Hot-carrier effects in deep submicron SOI MOSFETs

1997 ◽  
Vol 41 (11) ◽  
pp. 1769-1772 ◽  
Author(s):  
S.H. Renn ◽  
J.L. Pelloie ◽  
F. Balestra
Keyword(s):  
Deep Submicron ◽  
Hot Carrier ◽  
Hot Carrier Effects

Impact of velocity saturation and hot carrier effects on channel thermal noise model of deep sub-micron MOSFETs

2012 ◽  
Vol 72 ◽  
pp. 8-11 ◽  
Author(s):  
S.N. Ong ◽  
K.S. Yeo ◽  
K.W.J. Chew ◽  
L.H.K. Chan ◽  
X.S. Loo ◽  
...  
Keyword(s):  
Thermal Noise ◽  
Noise Model ◽  
Hot Carrier ◽  
Velocity Saturation ◽  
Hot Carrier Effects

Velocity Saturation Effects in a Short Channel Si-MOSFET and itsSmall Signal Characteristics

2009 ◽  
Vol 55 (2) ◽  
pp. 581-584
Author(s):  
Sanghoon Hwang ◽  
Hyunsik Im ◽  
Minkyu Song ◽  
Koichi Ishida ◽  
Toshiro Hiramoto ◽  
...  
Keyword(s):  
Short Channel ◽  
Velocity Saturation ◽  
Signal Characteristics ◽  
Saturation Effects

Temperature dependence of hot carrier effects in short-channel Si-MOSFETs

1995 ◽  
Vol 42 (12) ◽  
pp. 2211-2216 ◽  
Author(s):  
N. Sano ◽  
M. Tomizawa ◽  
A. Yoshii
Keyword(s):  
Temperature Dependence ◽  
Short Channel ◽  
Hot Carrier ◽  
Hot Carrier Effects
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