Performance analysis of p-type silicon nanowire FETs with silicon-germanium cladding

Author(s):  
M. Frey ◽  
J. Huang ◽  
F. Heinz ◽  
A. Erlebach ◽  
L. Smith ◽  
...  
2012 ◽  
Vol 209 (10) ◽  
pp. 2049-2058 ◽  
Author(s):  
Zahra Zamanipour ◽  
Xinghua Shi ◽  
Arash M. Dehkordi ◽  
Jerzy S. Krasinski ◽  
Daryoosh Vashaee

1991 ◽  
Vol 234 ◽  
Author(s):  
Cronin B. Vining

ABSTRACTA model is presented for the high temperature transport properties of large grain size, heavily doped p-type silicon-germanium alloys. Good agreement with experiment (±10%) is found by considering acoustic phonon and ionized impurity scattering for holes and phonon-phonon, point defect and hole-phonon scattering for phonons. Phonon scattering by holes is found to be substantially weaker than phonon scattering by electrons, which accounts for the larger thermal conductivity values of ptype silicon-germanium alloys compared to similarly doped n-type silicongermanium alloys. The relatively weak scattering of long-wavelength phonons by holes raises the possibility that p-type silicon-germanium alloys may be improved for thermoelectric applications by the addition of an additional phonon scattering mechanism which is effective on intermediate and long-wavelength phonons. Calculations indicate improvements in the thermoelectric figure of merit up to 40% may be possible by incorporating several volume percent of 20 Å radius inclusions into p-type silicon-germanium alloys.


2017 ◽  
Vol 9 (42) ◽  
pp. 37105-37111 ◽  
Author(s):  
David J. Hill ◽  
Taylor S. Teitsworth ◽  
Seokhyoung Kim ◽  
Joseph D. Christesen ◽  
James F. Cahoon
Keyword(s):  

2008 ◽  
Vol 188 (1-3) ◽  
pp. 11-17 ◽  
Author(s):  
D. Naidoo ◽  
H. P. Gunnlaugsson ◽  
K. Bharuth-Ram ◽  
V. V. Naicker ◽  
G. Weyer ◽  
...  

Author(s):  
Seungwon Yang ◽  
Younghwan Son ◽  
Sung Dae Suk ◽  
Dong-Won Kim ◽  
Donggun Park ◽  
...  

1998 ◽  
Vol 83 (10) ◽  
pp. 5258-5263 ◽  
Author(s):  
P. Gaworzewski ◽  
K. Tittelbach-Helmrich ◽  
U. Penner ◽  
N. V. Abrosimov

2005 ◽  
Vol 900 ◽  
Author(s):  
Gengfeng Zheng ◽  
Fernando Patolsky ◽  
Charles M. Lieber

ABSTRACTLabel-free, real-time, parallel and complementary electrical detection of proteins is demonstrated by p-type and n-type silicon nanowire field-effect transistors in the same arrays. Composed of hundreds of individually electrically addressable nanowire devices with highly sensitive and reproducible performances, these nanowire arrays can be controllably modified by monoclonal antibodies, and show discrete conductance changes characteristic of highly selective binding and unbinding of target proteins, such as prostate specific antigens (PSA), thus providing a general and powerful platform for high-throughput real-time parallel detection and rapid screening of libraries of biomolecules. Studies show that the PSA proteins can be routinely detected at femtomolar concentrations with high selectivity, and simultaneously incorporation of both p-type and n-type silicon nanowire devices enable discrimination against false positive/negative signals. The integrated complementary nanowire sensor arrays open up substantial opportunities for diagnosis and treatment of complex diseases such as cancer, detection of biological threats, and fundamental proteomic and biophysical studies.


Nano Letters ◽  
2008 ◽  
Vol 8 (12) ◽  
pp. 4670-4674 ◽  
Author(s):  
Giri Joshi ◽  
Hohyun Lee ◽  
Yucheng Lan ◽  
Xiaowei Wang ◽  
Gaohua Zhu ◽  
...  

2009 ◽  
Author(s):  
Mohammad Taghi Ahmadi ◽  
Munawar A. Riyadi ◽  
Ismail Saad ◽  
Razali Ismail ◽  
Mohamad Rusop ◽  
...  

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