Epitaxial layer transfer using thin film Sn soldering, suitable for hybrid integration in a coplanar technology

2002 ◽  
Author(s):  
V. Avramescu ◽  
K. Hjort
Keyword(s):  
Thin Film ◽  
Epitaxial Layer ◽  
Hybrid Integration ◽  
Layer Transfer ◽  
Coplanar Technology

Fabrication of silicon-on-insulator-multilayer structure by epitaxial layer transfer

2003 ◽  
Vol 336 (3-4) ◽  
pp. 344-348 ◽  
Author(s):  
Xinyun Xie ◽  
Weili Liu ◽  
Qing Lin ◽  
Chuanling Men ◽  
Chenglu Lin
Keyword(s):  
Epitaxial Layer ◽  
Multilayer Structure ◽  
Silicon On Insulator ◽  
Layer Transfer

Studies on silicon-on-insulator-multilayer structures prepared by epitaxial layer transfer

2004 ◽  
Vol 58 (3-4) ◽  
pp. 465-469
Author(s):  
Xinyun Xie ◽  
Qing Lin ◽  
Weili Liu ◽  
Chenglu Lin
Keyword(s):  
Epitaxial Layer ◽  
Silicon On Insulator ◽  
Multilayer Structures ◽  
Layer Transfer

Deep level studies in high-temperature annealed silicon wafers for layer transfer in thin-film solar cells

2012 ◽  
Vol 209 (10) ◽  
pp. 1857-1860
Author(s):  
Eddy Simoen ◽  
Valerie Depauw ◽  
Ivan Gordon ◽  
Jef Poortmans
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
High Temperature ◽  
Deep Level ◽  
Silicon Wafers ◽  
Thin Film Solar Cells ◽  
Layer Transfer

Measurement of thermal expansion coefficient of substrate GGG and its epitaxial layer YIG

1999 ◽  
Vol 14 (1) ◽  
pp. 2-4 ◽  
Author(s):  
Rui-sheng Liang ◽  
Feng-chao Liu
Keyword(s):  
Thin Film ◽  
Thermal Expansion ◽  
Single Crystal ◽  
Thermal Expansion Coefficient ◽  
Epitaxial Layer ◽  
Expansion Coefficient ◽  
Linear Thermal Expansion ◽  
New Method ◽  
Thermal Expansion Coefficients ◽  
Expansion Coefficients

A new method is used in measuring the linear thermal expansion coefficients in composite consisting of a substrate Gd3Ga2Ga3O12 (GGG) and its epitaxial layer Y3Fe2Fe3O12 (YIG) within the temperature range 13.88 °C–32.50 °C. The results show that the thermal expansion coefficient of GGG in composite is larger than that of the GGG in single crystal; the thermal expansion coefficient of thick film YIG is also larger than that of thin film. The results also show that the thermal expansion coefficient of a composite consisting of film and its substrate can be measured by using a new method.

Fabrication of silicon-on-insulator structure with Si3N4 as buried insulating films by epitaxial layer transfer

2002 ◽  
Vol 245 (3-4) ◽  
pp. 207-211 ◽  
Author(s):  
Xinyun Xie ◽  
Ninglin Zhang ◽  
Chuanling Men ◽  
Weili Liu ◽  
Qing Lin ◽  
...  
Keyword(s):  
Epitaxial Layer ◽  
Silicon On Insulator ◽  
Layer Transfer ◽  
Insulating Films
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