Robust Sense Amplifier Design under Random Dopant Fluctuations in Nano-Scale CMOS Technologies

2006 IEEE International SOC Conference ◽

10.1109/socc.2006.283894 ◽

2006 ◽

Cited By ~ 15

Author(s):

Joyce Yeung ◽

Hamid Mahmoodi

Keyword(s):

Sense Amplifier ◽

Nano Scale ◽

Random Dopant Fluctuations ◽

Amplifier Design ◽

Random Dopant

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Leakage Current Based Stabilization Scheme for Robust Sense-Amplifier Design for Yield Enhancement in Nano-scale SRAM

14th Asian Test Symposium (ATS'05) ◽

10.1109/ats.2005.73 ◽

2005 ◽

Cited By ~ 3

Author(s):

S. Mukhopadhyay ◽

A. Raychowdhury ◽

H. Mahmoodi ◽

K. Roy

Keyword(s):

Leakage Current ◽

Yield Enhancement ◽

Sense Amplifier ◽

Nano Scale ◽

Amplifier Design ◽

Design For Yield

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Investigation of SNM with Random Dopant Fluctuations for FD SGSOI and FinFET 6T SOI SRAM Cell by Three-dimensional Device Simulation

2006 International Conference on Simulation of Semiconductor Processes and Devices ◽

10.1109/sispad.2006.282848 ◽

2006 ◽

Cited By ~ 5

Author(s):

R. Tanabe ◽

Y. Ashizawa ◽

H. Oka

Keyword(s):

Three Dimensional ◽

Device Simulation ◽

Sram Cell ◽

Random Dopant Fluctuations ◽

Random Dopant

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A process variation tolerant self-compensating FinFET based sense amplifier design

Proceedings of the 19th ACM Great Lakes symposium on VLSI - GLSVLSI '09 ◽

10.1145/1531542.1531583 ◽

2009 ◽

Cited By ~ 1

Author(s):

Aarti Choudhary ◽

Sandip kundu

Keyword(s):

Process Variation ◽

Sense Amplifier ◽

Amplifier Design

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Impact of transistor aging effects on sense amplifier reliability in nano-scale CMOS

Thirteenth International Symposium on Quality Electronic Design (ISQED) ◽

10.1109/isqed.2012.6187515 ◽

2012 ◽

Cited By ~ 14

Author(s):

Roberto Menchaca ◽

Hamid Mahmoodi

Keyword(s):

Aging Effects ◽

Sense Amplifier ◽

Nano Scale ◽

Transistor Aging

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Impact of LER and Random Dopant Fluctuations on FinFET Matching Performance

IEEE Transactions on Nanotechnology ◽

10.1109/tnano.2008.917838 ◽

2008 ◽

Vol 7 (3) ◽

pp. 291-298 ◽

Cited By ~ 75

Author(s):

E. Baravelli ◽

M. Jurczak ◽

N. Speciale ◽

K. De Meyer ◽

A. Dixit

Keyword(s):

Matching Performance ◽

Random Dopant Fluctuations ◽

Random Dopant

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Variability Effects in Nanowire and Macaroni MOSFETs—Part I: Random Dopant Fluctuations

IEEE Transactions on Electron Devices ◽

10.1109/ted.2020.2971219 ◽

2020 ◽

Vol 67 (4) ◽

pp. 1485-1491 ◽

Cited By ~ 3

Author(s):

Alessandro S. Spinelli ◽

Christian Monzio Compagnoni ◽

Andrea L. Lacaita

Keyword(s):

Random Dopant Fluctuations ◽

Random Dopant

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Random dopant fluctuations impact reduction in 7 nm bulk-FinFET by substrate engineering

International Journal of Materials and Product Technology ◽

10.1504/ijmpt.2019.10026267 ◽

2019 ◽

Vol 59 (4) ◽

pp. 339

Author(s):

V. Jegadheesan ◽

K. Sivasankaran ◽

Aniruddha Konar

Keyword(s):

Impact Reduction ◽

Substrate Engineering ◽

Random Dopant Fluctuations ◽

Random Dopant

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Impact of Random Dopant Fluctuations on the Electronic Properties of InxGa1–xN/GaN Axial Nanowire Heterostructures

Nano Letters ◽

10.1021/acs.nanolett.5b00101 ◽

2015 ◽

Vol 15 (7) ◽

pp. 4289-4294 ◽

Cited By ~ 9

Author(s):

Oliver Marquardt ◽

Lutz Geelhaar ◽

Oliver Brandt

Keyword(s):

Electronic Properties ◽

Nanowire Heterostructures ◽

Random Dopant Fluctuations ◽

Random Dopant

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A subthreshold SRAM cell tolerant to random dopant fluctuations

2010 IEEE International Conference of Electron Devices and Solid-State Circuits (EDSSC) ◽

10.1109/edssc.2010.5713673 ◽

2010 ◽

Author(s):

Amir Reza Ahmadi Mehr ◽

I Madadi ◽

Ali Afzali-Kusha

Keyword(s):

Sram Cell ◽

Random Dopant Fluctuations ◽

Random Dopant

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New Current-Mirror Sense Amplifier Design for High-Speed SRAM Applications

IEICE Transactions on Fundamentals of Electronics Communications and Computer Sciences ◽

10.1093/ietfec/e89-a.2.377 ◽

2006 ◽

Vol E89-A (2) ◽

pp. 377-384 ◽

Cited By ~ 4

Author(s):

C.-L. HSU

Keyword(s):

High Speed ◽

Current Mirror ◽

Sense Amplifier ◽

Amplifier Design

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