Modeling and Analysis of Optical Modulators Based on Free-Carrier Plasma Dispersion Effect

Author(s):  
Xuanqi Chen ◽  
Zhifei Wang ◽  
Yi-Shing Chang ◽  
Jiang Xu ◽  
Jun Feng ◽  
...  
2014 ◽  
Vol 4 (1) ◽  
Author(s):  
Younghyun Kim ◽  
Mitsuru Takenaka ◽  
Takenori Osada ◽  
Masahiko Hata ◽  
Shinichi Takagi

Nanophotonics ◽  
2014 ◽  
Vol 3 (4-5) ◽  
pp. 229-245 ◽  
Author(s):  
Graham T. Reed ◽  
Goran Z. Mashanovich ◽  
Frederic Y. Gardes ◽  
Milos Nedeljkovic ◽  
Youfang Hu ◽  
...  

AbstractThe majority of the most successful optical modulators in silicon demonstrated in recent years operate via the plasma dispersion effect and are more specifically based upon free carrier depletion in a silicon rib waveguide. In this work we overview the different types of free carrier depletion type optical modulators in silicon. A summary of some recent example devices for each configuration is then presented together with the performance that they have achieved. Finally an insight into some current research trends involving silicon based optical modulators is provided including integration, operation in the mid-infrared wavelength range and application in short and long haul data transmission links.


2016 ◽  
Vol 24 (23) ◽  
pp. 26332 ◽  
Author(s):  
D. Pérez-Galacho ◽  
D. Marris-Morini ◽  
R. Stoffer ◽  
E. Cassan ◽  
C. Baudot ◽  
...  

Author(s):  
Diego Perez-Galacho ◽  
Delphine Marris-Morini ◽  
Eric Cassan ◽  
Charles Baudot ◽  
Jean-Marc Fedeli ◽  
...  

2008 ◽  
Vol 2008 ◽  
pp. 1-10 ◽  
Author(s):  
Juthika Basak ◽  
Ling Liao ◽  
Ansheng Liu ◽  
Doron Rubin ◽  
Yoel Chetrit ◽  
...  

This paper describes the recent advances made in silicon optical modulators employing the free carrier dispersion effect, specifically those governed by majority carrier dynamics. The design, fabrication, and measurements for two different devices are discussed in detail. We present an MOS capacitor-based modulator delivering 10 Gbps data with an extinction ratio of 4 dB and a pn-diode-based device with high-speed transmission of 40 Gbps and bandwidth greater than 30 GHz. Device improvements for achieving higher extinction ratios, as required for certain applications, are also discussed. These devices are key components of integrated silicon photonic chips which could enable optical interconnects in future terascale processors.


2012 ◽  
Vol 462 ◽  
pp. 532-535
Author(s):  
Abdul Razak Hanim ◽  
Haroon Hazura ◽  
Bidin Mardiana ◽  
Shaari Sahbudin ◽  
P. Susthitha Menon

The analyses of the simulation of a single mode buried waveguide optical phase modulator based on SOI material are here reported. The structure has been simulated by Athena from Silvaco simulation package. The buried waveguide is created by doping phosphorus with concentration of 10e15 cm-3 into the substrate. The real refractive index and the absorption coefficient of the waveguide are changed using the free carrier dispersion effect via carrier injection of a pn junction. The efficiency, VπLπ is calculated and the performance is compared with that of the rib waveguide optical phase modulator of the same material and dimensions. Simulation shows that the device can be an efficient device for application in intensity modulation.


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