A 1.4-mW 14-MHz MEMS Oscillator Based on a Differential Adjustable-Bandwidth Transimpedance Amplifier and Piezoelectric Disk Resonator

2018 ◽  
Vol 65 (10) ◽  
pp. 3414-3423 ◽  
Author(s):  
Anoir Bouchami ◽  
Mohannad Y. Elsayed ◽  
Frederic Nabki
Sensors ◽  
2019 ◽  
Vol 19 (12) ◽  
pp. 2680
Author(s):  
Anoir Bouchami ◽  
Mohannad Y. Elsayed ◽  
Frederic Nabki

This paper presents a microelectromechanical system (MEMS)-based oscillator based on a Lamé-mode capacitive micromachined resonator and a fully differential high-gain transimpedance amplifier (TIA). The proposed TIA is designed using TSMC 65 nm CMOS technology and consumes only 0.9 mA from a 1-V supply. The measured mid-band transimpedance gain is 98 dB Ω and the TIA features an adjustable bandwidth with a maximum bandwidth of 142 MHz for a parasitic capacitance C P of 4 pF. The measured input-referred current noise of the TIA at mid-band is below 15 pA/ Hz . The TIA is connected to a Lamé-mode resonator, and the oscillator performance in terms of phase noise and frequency stability is presented. The measured phase noise under vacuum is −120 dBc/Hz at a 1-kHz offset, while the phase noise floor reaches −127 dBc/Hz. The measured short-term stability of the MEMS-based oscillator is ±0.25 ppm.


2009 ◽  
Vol E92-B (6) ◽  
pp. 2239-2242 ◽  
Author(s):  
Sang Hyun PARK ◽  
Quan LE ◽  
Bo-Hun CHOI

Author(s):  
Angelo Marcelo Tusset ◽  
Rodrigo Tumolin Rocha ◽  
Frederic Conrad Janzen ◽  
José Manoel Balthazar

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