Gap size dependence of the dielectric strength in nano vacuum gaps

2013 ◽  
Vol 20 (4) ◽  
pp. 1467-1471 ◽  
Author(s):  
David Lyon ◽  
Alfred Hubler
1994 ◽  
Vol 366 ◽  
Author(s):  
M. Arndt ◽  
F. Kremer

ABSTRACTBroadband dielectric spectroscopy (10−2 Hz – 109 Hz) is employed to study the molecular dynamics of the glassforming liquid salol (phenyl salicylate) being contained in (dielectric inactive) porous glasses with pore sizes of about 2.5 nm, 5.0 nm and 7.5 nm. Besides the bulk relaxation (I) of salol, two further dielectric loss processes are observed due to the geometrical constraint of the inner surfaces of the pores: the “interfacial relaxation” (II) and a Maxwell-Wagner polarization (III). The “interfacial relaxation” is assigned to the restricted dynamics of the molecules close to the inner surface of the pores. It shows a strong pore-size dependence for pores < 5 nm both in relaxation rate and dielectric strength.


2020 ◽  
Vol 101 (12) ◽  
Author(s):  
Jonas Heimerl ◽  
Takuya Higuchi ◽  
Maximilian Ammon ◽  
M. Alexander Schneider ◽  
Peter Hommelhoff
Keyword(s):  

Author(s):  
Jaesun Jeong ◽  
Gu Hyun Chung ◽  
William J. Buttner ◽  
Gary W. Hunter ◽  
Joseph R. Stetter ◽  
...  

We demonstrated the application of the atomic force microscope (AFM) in generation of controllable nano-gaps on single wall carbon nano-tubes (SWCNTs). Tapping mode AFM combined with interleave mode was used to image and manipulate the CNTs. By precise control of the loading force and the scan rate, we were able to generate desired gaps on CNT nanowires ranging from 10.6 nm to 58.8 nm. The gap size dependence on loading force and scan rate was discussed. Such a structure can be applied in fabrication of capacitancebased nano-device toward sensor applications.


2006 ◽  
Vol 13 (1) ◽  
pp. 18-25 ◽  
Author(s):  
V. Sidorov ◽  
D. Alferov ◽  
E. Alferova

2003 ◽  
Vol 766 ◽  
Author(s):  
Ahila Krishnamoorthy ◽  
N.Y. Huang ◽  
Shu-Yunn Chong

AbstractBlack DiamondTM. (BD) is one of the primary candidates for use in copper-low k integration. Although BD is SiO2 based, it is vastly different from oxide in terms of dielectric strength and reliability. One of the main reliability concerns is the drift of copper ions under electric field to the surrounding dielectric layer and this is evaluated by voltage ramp (V-ramp) and time dependent dielectric breakdown (TDDB). Metal 1 and Metal 2 intralevel comb structures with different metal widths and spaces were chosen for dielectric breakdown studies. Breakdown field of individual test structures were obtained from V-ramp tests in the temperature range of 30 to 150°C. TDDB was performed in the field range 0.5 – 2 MV/cm. From the leakage between combs at the same level (either metal 1 or metal 2) Cu drift through SiC/BD or SiN/BD interface was characterized. It was found that Cu/barrier and barrier/low k interfaces functioned as easy paths for copper drift thereby shorting the lines. Cu/SiC was found to provide a better interface than Cu/SiN.


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