New design of a medium voltage indoor post insulator

2017 ◽  
Vol 24 (2) ◽  
pp. 1162-1168 ◽  
Author(s):  
Mirza Sarajlic ◽  
Peter Kitak ◽  
Joze Pihler
Keyword(s):  
Medium Voltage ◽  
Post Insulator

scholarly journals POST INSULATOR DESIGN OPTIMIZATION IN MEDIUM VOLTAGE SWITCHGEAR

2014 ◽  
pp. 65-69
Author(s):  
SHASHWAT S. BASUTKAR ◽  
DR V.N. PANDE
Keyword(s):  
Smart Grid ◽  
Power Systems ◽  
Optimum Design ◽  
Partial Discharge ◽  
Software Tool ◽  
Optimization Techniques ◽  
Design Parameters ◽  
Medium Voltage ◽  
Standard Value ◽  
Post Insulator

There has been constant development in the energy sector. As the trend of SMART grid is increasing, modern power systems require smarter and reliable switchgear. In this view, the optimum design of switchgear and components acquired prime importance. This can be achieved using various optimization techniques. In this paper, novel optimum design of post insulator is proposed and carried out. The design gives a standard value of capacitance for the indicating system and also solves problem of partial discharge in Indian system. The design is first carried out using 3D MAXWELL software tool for 33kv post insulator which gives drawing in AUTOCAD. The output design parameters obtained in 3D MAXWELL are used for optimization in MATLAB.

scholarly journals Electric Field of a Medium Voltage Indoor Post Insulator

2018 ◽  
Author(s):  
Mirza Sarajlić ◽  
Jože Pihler ◽  
Nermin Sarajlić ◽  
Peter Kitak
Keyword(s):  
Electric Field ◽  
Medium Voltage ◽  
Post Insulator

Prospects for convergent beam electron diffraction with a 200kV cold field-emission transmission electron microscope

1991 ◽  
Vol 49 ◽  
pp. 466-467
Author(s):  
J W Steeds ◽  
R Vincent
Keyword(s):  
Field Emission ◽  
High Performance ◽  
Small Diameter ◽  
Convergent Beam Electron Diffraction ◽  
Zone Axis ◽  
Medium Voltage ◽  
Transmission Electron ◽  
Good Crystallinity ◽  
Special Modification ◽  
Convergent Beam

We review the analytical powers which will become more widely available as medium voltage (200-300kV) TEMs with facilities for CBED on a nanometre scale come onto the market. Of course, high performance cold field emission STEMs have now been in operation for about twenty years, but it is only in relatively few laboratories that special modification has permitted the performance of CBED experiments. Most notable amongst these pioneering projects is the work in Arizona by Cowley and Spence and, more recently, that in Cambridge by Rodenburg and McMullan.There are a large number of potential advantages of a high intensity, small diameter, focussed probe. We discuss first the advantages for probes larger than the projected unit cell of the crystal under investigation. In this situation we are able to perform CBED on local regions of good crystallinity. Zone axis patterns often contain information which is very sensitive to thickness changes as small as 5nm. In conventional CBED, with a lOnm source, it is very likely that the information will be degraded by thickness averaging within the illuminated area.

Atomic structure imaging of the Si/SiO2 interface with high-resolution electron microscopy

1986 ◽  
Vol 44 ◽  
pp. 390-391
Author(s):  
J.L. Batstone ◽  
J.M. Gibson ◽  
Alice.E. White ◽  
K.T. Short
Keyword(s):  
Electron Microscopy ◽  
High Resolution ◽  
Atomic Structure ◽  
High Resolution Electron Microscopy ◽  
Medium Voltage ◽  
Voltage Electron ◽  
Resolution Electron ◽  
Structural Image ◽  
Electron Microscopes ◽  
Point To Point

High resolution electron microscopy (HREM) is a powerful tool for the determination of interface atomic structure. With the previous generation of HREM's of point-to-point resolution (rpp) >2.5Å, imaging of semiconductors in only <110> directions was possible. Useful imaging of other important zone axes became available with the advent of high voltage, high resolution microscopes with rpp <1.8Å, leading to a study of the NiSi2 interface. More recently, it was shown that images in <100>, <111> and <112> directions are easily obtainable from Si in the new medium voltage electron microscopes. We report here the examination of the important Si/Si02 interface with the use of a JEOL 4000EX HREM with rpp <1.8Å, in a <100> orientation. This represents a true structural image of this interface.

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