Influences of Structure Around Gate-Edge on High Electric Field Strength in MISFETsWith High->tex<$k$>/tex<Gate Dielectrics

2004 ◽  
Vol 51 (1) ◽  
pp. 68-73 ◽  
Author(s):  
M. Ono ◽  
A. Nishiyama
2006 ◽  
Vol 3 (2) ◽  
pp. 242-245
Author(s):  
Baghdad Science Journal

In this research was conducted to provide a product to analyze the performance sensor fiber optic used to measure and feel the intensity of the electric field results showed obtained that use sensor long gives reactive high electric field strength and a high value for allergic sensor, but that is at the expense of reducing the intensity of the electric field that is detected


1995 ◽  
Vol 66 (4) ◽  
pp. 460-462 ◽  
Author(s):  
Hitoki Yoneda ◽  
Ken‐ichi Ueda ◽  
Yumi Aikawa ◽  
Kazuhiro Baba ◽  
Nobuaki Shohata

2020 ◽  
Vol 90 ◽  
pp. 106639
Author(s):  
N. Vennemann ◽  
C. Kummerlöwe ◽  
M. Mertes ◽  
F. Kühnast ◽  
D. Bröker ◽  
...  

Author(s):  
О.В. Чефонов ◽  
А.В. Овчинников ◽  
С.А. Евлашин ◽  
М.Б. Агранат

The investigations upon destruction of thin stainless films under the action of ultrashort pulses of directional terahertz radiation are carried out. The terahertz pulse with duration within several picoseconds in fact simulates non-resonance action on matter of quasi-dc electric field with a high electric field strength (up to 20 MV/cm).


2019 ◽  
Vol 6 (2) ◽  
pp. 111-114
Author(s):  
R. Kornev ◽  
P. Sennikov ◽  
V. Nazarov ◽  
A. Kut'in ◽  
A. Plekhovich

A contracted RF (40.68 MHz) arc discharge of atmospheric pressure, stabilized between two rod electrodes, was used to obtain trichlorosilane by the reaction of hydrogen reduction of silicon tetrachloride (SiCl<sub>4</sub>). In model mixtures of macro-composition in the ratio H<sub>2</sub>/SiCl<sub>4</sub>/CCl<sub>4</sub>=10/1/1, it was shown that C and SiC are the main solid-phase product which are deposited on the surface of electrodes in the form of dendrides. The temperature of the ends of the electrodes determined using emission thermometry is 1600 K. The thermodynamic analysis of H<sub>2</sub>+SiCl<sub>4</sub>+CCl<sub>4</sub> system confirms that the formation of C and SiC occurs in the temperature range of 1600 K. The deposition of solid-phase products occurs on the electrodes in the zone of high electric field strength.


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