Two-Dimensional Analytical Modeling of Fully Depleted DMG SOI MOSFET and Evidence for Diminished SCEs

2004 ◽  
Vol 51 (4) ◽  
pp. 569-574 ◽  
Author(s):  
M.J. Kumar ◽  
A. Chaudhry
Keyword(s):  
Analytical Modeling ◽  
Two Dimensional ◽  
Fully Depleted ◽  
Soi Mosfet

scholarly journals 2-D analytical modeling of dual material gate fully depleted SOI MOSFET with high-k dielectric

2008 ◽  
Vol 57 (6) ◽  
pp. 3807
Author(s):  
Luan Su-Zhen ◽  
Liu Hong-Xia ◽  
Jia Ren-Xu ◽  
Cai Nai-Qiong
Keyword(s):  
Analytical Modeling ◽  
Fully Depleted ◽  
Soi Mosfet ◽  
High K ◽  
High K Dielectric ◽  
Dual Material

Modeling of Sub Threshold Current and Sub Threshold Swing of Short-Channel Fully-Depleted SOI MOSFET with Back-Gate Control

2017 ◽  
Vol 9 (01) ◽  
pp. 67-72
Author(s):  
Sarvesh Dubey ◽  
Rahul Mishra
Keyword(s):  
Analytical Modeling ◽  
Threshold Current ◽  
Short Channel Effects ◽  
Short Channel ◽  
Simulation Data ◽  
Back Gate ◽  
Fully Depleted ◽  
Soi Mosfet ◽  
Channel Effects ◽  
Gate Control

The present paper deals with the analytical modeling of subthreshold characteristics of short-channel fully-depleted recessed-source/drain SOI MOSFET with back-gate control. The variations in the subthreshold current and subthreshold swing have been analyzed against the back-gate bias voltage, buried-oxide (BOX) thickness and recessed source/drain thickness to assess the severity of short-channel effects in the device. The model results are validated by simulation data obtained from two-dimensional device simulator ATLAS from Silvaco.

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