GaAs PN Diodes with Heavily Carbon-Doped P-Type GaAs Grown by MOMBE

1990 ◽  
Vol 29 (Part 2, No. 10) ◽  
pp. L1731-L1734 ◽  
Author(s):  
Shinji Nozaki ◽  
Ryuji Miyake ◽  
Takumi Yamada ◽  
Makoto Konagai ◽  
Kiyoshi Takahashi
Keyword(s):  
Carbon Doped ◽  
P Type

Heavily carbon-doped p-type (In)GaAs grown by gas-source molecular beam epitaxy using diiodomethane

1995 ◽  
Vol 150 ◽  
pp. 221-226
Author(s):  
T. Tomioka ◽  
N. Okamoto ◽  
H. Ando ◽  
S. Yamaura ◽  
T. Fujii
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Carbon Doped ◽  
Gas Source ◽  
P Type

Carbon-doped p-type (0001) plane AlGaN (Al = 6-55%) with high hole density

2012 ◽  
Vol 249 (3) ◽  
pp. 459-463 ◽  
Author(s):  
Hideo Kawanishi ◽  
Tatsuya Tomizawa
Keyword(s):  
Hole Density ◽  
Carbon Doped ◽  
P Type

25-nm Gate Length nMOSFET With Steep Channel Profiles Utilizing Carbon-Doped Silicon Layers (A P-Type Dopant Confinement Layer)

2011 ◽  
Vol 58 (5) ◽  
pp. 1302-1310 ◽  
Author(s):  
A Hokazono ◽  
H Itokawa ◽  
N Kusunoki ◽  
I Mizushima ◽  
S Inaba ◽  
...  
Keyword(s):  
Gate Length ◽  
Carbon Doped ◽  
Doped Silicon ◽  
P Type

Electrical and Optical Properties of Carbon Doped Cubic GaN Epilayers Grown Under Extreme Ga Excess

2003 ◽  
Vol 798 ◽  
Author(s):  
D. J. As ◽  
D. G. Pacheco-Salazar ◽  
S. Potthast ◽  
K. Lischka
Keyword(s):  
Optical Properties ◽  
Hole Concentration ◽  
Hole Mobility ◽  
Growth Conditions ◽  
Rf Plasma ◽  
Electrical And Optical Properties ◽  
Carbon Doped ◽  
Cubic Gan ◽  
Hall Effect Measurements ◽  
P Type

ABSTRACTP-type doping of cubic GaN by carbon is reported with maximum hole concentration of 2 6.1×1018cm-3and hole mobility of 23.5 cm /Vs at room temperature, respectively. The cubic GaN:C was grown by rf-plasma assisted molecular beam epitaxy (MBE) under Ga-rich growth conditions on a semiinsulating GaAs (001) substrate (3 inches wafer). E-beam evaporation of a graphite rode with an C-flux of 1×1012cm-2s-1was used for C-doping of the c-GaN. Optical microscopy, Hall-effect measurements and photoluminescence were performed to investigate the morphological, electrical and optical properties of cubic GaN:C. Under Ga-rich growth conditions most part of the carbon atoms were incorporated substitutially on N-site giving p-type conductivity. Our results verify that effective p-type doping of c-GaN can be achieved under extrem Ga excess.

P-Type Carbon-Doped InGaAs Grown by Metalorganic Molecular Beam Epitaxy

1991 ◽  
Vol 30 (Part 2, No. 9B) ◽  
pp. L1609-L1611 ◽  
Author(s):  
Jun-ichi Shirakashi ◽  
Takumi Yamada ◽  
Ming Qi ◽  
Shinji Nozaki ◽  
Kiyoshi Takahashi ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Carbon Doped ◽  
Metalorganic Molecular Beam Epitaxy ◽  
P Type

Temperature Dependence of the Electrical Transport of Carbon Doped Gan

1996 ◽  
Vol 421 ◽  
Author(s):  
Wim Geerts ◽  
J.D. MacKenzie ◽  
C.R. Abernathy ◽  
S.J Pearton ◽  
Thomas Schmiedel
Keyword(s):  
Activation Energy ◽  
Charge Transport ◽  
Temperature Dependence ◽  
Electrical Transport ◽  
Effective Activation Energy ◽  
Impurity Band ◽  
Hall Voltage ◽  
Effective Activation ◽  
Carbon Doped ◽  
P Type

AbstractThe temperature dependence of the Hall voltage and resistivity of highly carbon doped GaN were measured. From the sign of the Hall voltage, the material appears to be p-type. Charge transport takes place in an impurity band and the valence band. The effective activation energy as estimated from the maximum in the temperature versus Hall voltage relation is 10–30 meV.

Stable ferromagnetism in p-type carbon-doped ZnO nanoneedles

2009 ◽  
Vol 95 (13) ◽  
pp. 133103 ◽  
Author(s):  
T. S. Herng ◽  
S. P. Lau ◽  
C. S. Wei ◽  
L. Wang ◽  
B. C. Zhao ◽  
...  
Keyword(s):  
Carbon Doped ◽  
Doped Zno ◽  
P Type
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