On the Switching Parameter Variation of Metal Oxide RRAM—Part II: Model Corroboration and Device Design Strategy

2012 ◽  
Vol 59 (4) ◽  
pp. 1183-1188 ◽  
Author(s):  
Shimeng Yu ◽  
Ximeng Guan ◽  
H.-S. Philip Wong
Keyword(s):  
Metal Oxide ◽  
Design Strategy ◽  
Parameter Variation ◽  
Device Design ◽  
Switching Parameter

Molecular Design Strategy for Ordered Mesoporous Stoichiometric Metal Oxide

2019 ◽  
Vol 58 (44) ◽  
pp. 15863-15868 ◽  
Author(s):  
Changyao Wang ◽  
Xiaoyue Wan ◽  
Linlin Duan ◽  
Peiyuan Zeng ◽  
Liangliang Liu ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Molecular Design ◽  
Design Strategy ◽  
Ordered Mesoporous

Device Design Consideration forVth-Controllable Four-Terminal Double-Gate Metal-Oxide-Semiconductor Field-Effect Transistor

2005 ◽  
Vol 44 (4B) ◽  
pp. 2351-2356
Author(s):  
Meishoku Masahara ◽  
Yongxun Liu ◽  
Kunihiro Sakamoto ◽  
Kazuhiko Endo ◽  
Toshihiro Sekigawa ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Double Gate ◽  
Design Consideration ◽  
Device Design ◽  
Effect Transistor

An overview of the switching parameter variation of RRAM

2014 ◽  
Vol 59 (36) ◽  
pp. 5324-5337 ◽  
Author(s):  
Meiyun Zhang ◽  
Shibing Long ◽  
Guoming Wang ◽  
Yang Li ◽  
Xiaoxin Xu ◽  
...  
Keyword(s):  
Parameter Variation ◽  
Switching Parameter

Molecular Design Strategy for Ordered Mesoporous Stoichiometric Metal Oxide

2019 ◽  
Vol 131 (44) ◽  
pp. 16010-16015 ◽  
Author(s):  
Changyao Wang ◽  
Xiaoyue Wan ◽  
Linlin Duan ◽  
Peiyuan Zeng ◽  
Liangliang Liu ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Molecular Design ◽  
Design Strategy ◽  
Ordered Mesoporous

Existence of Cubic ZrO2 at 300°C on Bulk Zirconium

1969 ◽  
Vol 27 ◽  
pp. 166-167
Author(s):  
R.A. Ploc
Keyword(s):  
Metal Oxide ◽  
Metal Substrate ◽  
Preferred Orientation ◽  
Monoclinic Zirconia ◽  
Epitaxial Relationship

The manner in which ZrO2 forms on zirconium at 300°C in air has been discussed in the first reference. In short, monoclinic zirconia nucleates and grows with a preferred orientation relative to the metal substrate. The mode of growth is not well understood since an epitaxial relationship which gives minimum misfit between the zirconium ions in the metal/oxide combination is not realized. The reason may be associated with a thin cubic or tetragonal layer of ZrO2 between the inner oxygen saturated metal and the outer monoclinic zirconia.

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