A Compact Current–Voltage Model for 2D Semiconductor Based Field-Effect Transistors Considering Interface Traps, Mobility Degradation, and Inefficient Doping Effect

IEEE Transactions on Electron Devices ◽

10.1109/ted.2014.2365028 ◽

2014 ◽

Vol 61 (12) ◽

pp. 4282-4290 ◽

Author(s):

Wei Cao ◽

Jiahao Kang ◽

Wei Liu ◽

Kaustav Banerjee

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Doping Effect ◽

Interface Traps ◽

Mobility Degradation ◽

Current Voltage

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Implicit Continuous Current–Voltage Model for Surrounding-Gate Metal–Oxide–Semiconductor Field-Effect Transistors Including Interface Traps

IEEE Transactions on Electron Devices ◽

10.1109/ted.2011.2156412 ◽

2011 ◽

Vol 58 (8) ◽

pp. 2520-2524 ◽

Author(s):

Yun Seop Yu ◽

Namki Cho ◽

Sung Woo Hwang ◽

Doyeol Ahn

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Interface Traps ◽

Current Voltage ◽

Surrounding Gate ◽

Continuous Current

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Construction of two-dimensional regression models of current-voltage characteristics of the output current of field-effect transistors using the information system PLExp

Izmeritel`naya Tekhnika ◽

10.32446/0368-1025it.2019-11-49-55 ◽

2019 ◽

pp. 49-55

Author(s):

N.Y. Baturina ◽

I.V. Kalienko

Keyword(s):

Information System ◽

Regression Models ◽

Field Effect ◽

Field Effect Transistors ◽

Two Dimensional ◽

Output Current ◽

Current Voltage ◽

Current Voltage Characteristics

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A compact current-voltage model for carbon nanotube field effect transistors

2008 International Semiconductor Conference ◽

10.1109/smicnd.2008.4703425 ◽

2008 ◽

Author(s):

Hadi Hosseinzadegan ◽

Hossein Aghababa ◽

Mahmoud Zangeneh ◽

Ali Afzali-kusha ◽

Behjat Forouzandeh

Keyword(s):

Carbon Nanotube ◽

Field Effect ◽

Field Effect Transistors ◽

Current Voltage

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Modelling of Chirality-Dependent Current–Voltage Characteristics of Carbon-Nanotube Field-Effect Transistors

Chinese Physics Letters ◽

10.1088/0256-307x/23/5/073 ◽

2006 ◽

Vol 23 (5) ◽

pp. 1327-1330 ◽

Author(s):

Zhao Xu ◽

Wang Yan ◽

Yu Zhi-Ping

Keyword(s):

Carbon Nanotube ◽

Field Effect ◽

Field Effect Transistors ◽

Current Voltage ◽

Current Voltage Characteristics

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Analytic modelling for current–voltage characteristics of InGaP/InGaAs/GaAs pseudomorphic doped-channel field-effect transistors [Superlattices and Microstructures, Vol. 30, No. 3, 2001, pp. 145–158]

Superlattices and Microstructures ◽

10.1016/s0749-6036(02)00122-2 ◽

2002 ◽

Vol 32 (2-3) ◽

pp. 153

Author(s):

Ching-Sung Lee ◽

Wei-Chou Hsu

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Current Voltage ◽

Current Voltage Characteristics

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Remote interfacial dipole scattering and electron mobility degradation in Ge field-effect transistors with GeOx/Al2O3gate dielectrics

Journal of Physics D Applied Physics ◽

10.1088/0022-3727/49/25/255104 ◽

2016 ◽

Vol 49 (25) ◽

pp. 255104 ◽

Author(s):

Xiaolei Wang ◽

Jinjuan Xiang ◽

Shengkai Wang ◽

Wenwu Wang ◽

Chao Zhao ◽

...

Keyword(s):

Electron Mobility ◽

Field Effect ◽

Field Effect Transistors ◽

Mobility Degradation ◽

Dipole Scattering

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Carrier mobility degradation in metal‐oxide‐semiconductor field‐effect transistors due to oxide charge

Journal of Applied Physics ◽

10.1063/1.355249 ◽

1993 ◽

Vol 74 (1) ◽

pp. 757-759 ◽

Author(s):

A. Phanse ◽

D. Sharma ◽

A. Mallik ◽

J. Vasi

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Carrier Mobility ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Oxide Charge ◽

Mobility Degradation

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A surface-potential-based model for silicon nanowire junctionless field-effect transistors including interface traps

International Journal of Numerical Modelling Electronic Networks Devices and Fields ◽

10.1002/jnm.1985 ◽

2014 ◽

Vol 27 (5-6) ◽

pp. 896-907 ◽

Author(s):

Ye Deng ◽

Xiao-ya Fan ◽

Ru Han ◽

Cong Li

Keyword(s):

Surface Potential ◽

Field Effect ◽

Field Effect Transistors ◽

Silicon Nanowire ◽

Interface Traps

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Electron Mobility Degradation and Interface Dipole Formation in Direct-Contact HfO$_{2}$/Si Metal–Oxide–Semiconductor Field-Effect Transistors

Applied Physics Express ◽

10.1143/apex.4.101101 ◽

2011 ◽

Vol 4 (10) ◽

pp. 101101 ◽

Author(s):

Noriyuki Miyata ◽

Hiroyuki Ishii ◽

Taro Itatani ◽

Tetsuji Yasuda

Keyword(s):

Metal Oxide ◽

Electron Mobility ◽

Direct Contact ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Interface Dipole ◽

Mobility Degradation

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Impact of interface traps on the BTBT-current in tunnel field effect transistors

2018 5th International Conference on Electrical and Electronic Engineering (ICEEE) ◽

10.1109/iceee2.2018.8391335 ◽

2018 ◽

Author(s):

M. Ehteshamuddin ◽

Abdulla G. Alharbi ◽

Sajad A Loan

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Interface Traps

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