Electron Mobility Degradation and Interface Dipole Formation in Direct-Contact HfO$_{2}$/Si Metal–Oxide–Semiconductor Field-Effect Transistors

Applied Physics Express ◽

10.1143/apex.4.101101 ◽

2011 ◽

Vol 4 (10) ◽

pp. 101101 ◽

Author(s):

Noriyuki Miyata ◽

Hiroyuki Ishii ◽

Taro Itatani ◽

Tetsuji Yasuda

Keyword(s):

Metal Oxide ◽

Electron Mobility ◽

Direct Contact ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Interface Dipole ◽

Mobility Degradation

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The temperature dependence of the electron mobility degradation mechanisms in n-channel metal-oxide-semiconductor field effect transistors with ZrO2 and Sm2O3 gate dielectrics

Applied Physics Letters ◽

10.1063/1.2802729 ◽

2007 ◽

Vol 91 (17) ◽

pp. 173510 ◽

Author(s):

Hsiao-shuo Ho ◽

Ingram Yin-ku Chang ◽

Joseph Ya-min Lee

Keyword(s):

Metal Oxide ◽

Temperature Dependence ◽

Electron Mobility ◽

Field Effect ◽

Gate Dielectrics ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Degradation Mechanisms ◽

Mobility Degradation

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High-Electron-Mobility Ge n-Channel Metal–Oxide–Semiconductor Field-Effect Transistors with High-Pressure Oxidized Y2O3

Applied Physics Express ◽

10.1143/apex.4.064201 ◽

2011 ◽

Vol 4 (6) ◽

pp. 064201 ◽

Author(s):

Tomonori Nishimura ◽

Choong Hyun Lee ◽

Toshiyuki Tabata ◽

Sheng Kai Wang ◽

Kosuke Nagashio ◽

...

Keyword(s):

High Pressure ◽

Metal Oxide ◽

Electron Mobility ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

High Electron ◽

High Electron Mobility

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Electron Mobility Enhancement of Extremely Thin Body In$_{0.7}$Ga$_{0.3}$As-on-Insulator Metal–Oxide–Semiconductor Field-Effect Transistors on Si Substrates by Metal–Oxide–Semiconductor Interface Buffer Layers

Applied Physics Express ◽

10.1143/apex.5.014201 ◽

2011 ◽

Vol 5 (1) ◽

pp. 014201 ◽

Author(s):

SangHyeon Kim ◽

Masafumi Yokoyama ◽

Noriyuki Taoka ◽

Ryo Iida ◽

Sunghoon Lee ◽

...

Keyword(s):

Metal Oxide ◽

Electron Mobility ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Buffer Layers ◽

Oxide Semiconductor ◽

Thin Body ◽

Semiconductor Interface ◽

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Electron mobility characteristics of n-channel metal-oxide-semiconductor field-effect transistors fabricated on Ge-rich single- and dual-channel SiGe heterostructures

Journal of Applied Physics ◽

10.1063/1.1638610 ◽

2004 ◽

Vol 95 (3) ◽

pp. 1550-1555 ◽

Author(s):

Minjoo L. Lee ◽

Eugene A. Fitzgerald

Keyword(s):

Metal Oxide ◽

Electron Mobility ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

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Carrier mobility degradation in metal‐oxide‐semiconductor field‐effect transistors due to oxide charge

Journal of Applied Physics ◽

10.1063/1.355249 ◽

1993 ◽

Vol 74 (1) ◽

pp. 757-759 ◽

Author(s):

A. Phanse ◽

D. Sharma ◽

A. Mallik ◽

J. Vasi

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Carrier Mobility ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Oxide Charge ◽

Mobility Degradation

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Electron mobility enhancement in strained-germanium n-channel metal-oxide-semiconductor field-effect transistors

Applied Physics Letters ◽

10.1063/1.2779845 ◽

2007 ◽

Vol 91 (10) ◽

pp. 102103 ◽

Author(s):

Y.-J. Yang ◽

W. S. Ho ◽

C.-F. Huang ◽

S. T. Chang ◽

C. W. Liu

Keyword(s):

Metal Oxide ◽

Electron Mobility ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor

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High electron mobility germanium (Ge) metal oxide semiconductor field effect transistors (MOSFETs)

Silicon–Germanium (SiGe) Nanostructures ◽

10.1533/9780857091420.4.528 ◽

2011 ◽

pp. 528-550

Author(s):

A. Toriumi

Keyword(s):

Metal Oxide ◽

Electron Mobility ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

High Electron ◽

High Electron Mobility

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Experimental Study on Electron Mobility in InxGa1-xAs-on-Insulator Metal-Oxide-Semiconductor Field-Effect Transistors With In Content Modulation and MOS Interface Buffer Engineering

IEEE Transactions on Nanotechnology ◽

10.1109/tnano.2013.2265435 ◽

2013 ◽

Vol 12 (4) ◽

pp. 621-628 ◽

Author(s):

SangHyeon Kim ◽

Masafumi Yokoyama ◽

Noriyuki Taoka ◽

Ryo Iida ◽

Sung-Hoon Lee ◽

...

Keyword(s):

Experimental Study ◽

Metal Oxide ◽

Electron Mobility ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor

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Series resistance and mobility degradation factor in C-incorporated SiGe heterostructure p-type metal oxide semiconductor field-effect transistors

Semiconductor Science and Technology ◽

10.1088/0268-1242/17/9/306 ◽

2002 ◽

Vol 17 (9) ◽

pp. 938-941 ◽

Author(s):

G S Kar ◽

S Maikap ◽

S K Banerjee ◽

S K Ray

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Series Resistance ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Degradation Factor ◽

Mobility Degradation ◽

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Experimental Study on Electron Mobility in Accumulation-Mode Silicon-on-Insulator Metal–Oxide–Semiconductor Field-Effect Transistors

Japanese Journal of Applied Physics ◽

10.7567/jjap.50.094101 ◽

2011 ◽

Vol 50 (9R) ◽

pp. 094101 ◽

Author(s):

Naotoshi Kadotani ◽

Teruyuki Ohashi ◽

Tsunaki Takahashi ◽

Shunri Oda ◽

Ken Uchida

Keyword(s):

Experimental Study ◽

Metal Oxide ◽

Electron Mobility ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Accumulation Mode

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