Carrier mobility degradation in metal‐oxide‐semiconductor field‐effect transistors due to oxide charge

Journal of Applied Physics ◽

10.1063/1.355249 ◽

1993 ◽

Vol 74 (1) ◽

pp. 757-759 ◽

Author(s):

A. Phanse ◽

D. Sharma ◽

A. Mallik ◽

J. Vasi

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Carrier Mobility ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Oxide Charge ◽

Mobility Degradation

Download Full-text

Electron Mobility Degradation and Interface Dipole Formation in Direct-Contact HfO$_{2}$/Si Metal–Oxide–Semiconductor Field-Effect Transistors

Applied Physics Express ◽

10.1143/apex.4.101101 ◽

2011 ◽

Vol 4 (10) ◽

pp. 101101 ◽

Author(s):

Noriyuki Miyata ◽

Hiroyuki Ishii ◽

Taro Itatani ◽

Tetsuji Yasuda

Keyword(s):

Metal Oxide ◽

Electron Mobility ◽

Direct Contact ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Interface Dipole ◽

Mobility Degradation

Download Full-text

Series resistance and mobility degradation factor in C-incorporated SiGe heterostructure p-type metal oxide semiconductor field-effect transistors

Semiconductor Science and Technology ◽

10.1088/0268-1242/17/9/306 ◽

2002 ◽

Vol 17 (9) ◽

pp. 938-941 ◽

Author(s):

G S Kar ◽

S Maikap ◽

S K Banerjee ◽

S K Ray

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Series Resistance ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Degradation Factor ◽

Mobility Degradation ◽

Download Full-text

Hot‐carrier‐induced degradation of metal‐oxide‐semiconductor field‐effect transistors: Oxide charge versus interface traps

Journal of Applied Physics ◽

10.1063/1.342548 ◽

1989 ◽

Vol 65 (1) ◽

pp. 354-360 ◽

Author(s):

Jeong Yeol Choi ◽

Ping Keung Ko ◽

Chenming Hu ◽

William F. Scott

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Interface Traps ◽

Oxide Charge ◽

Download Full-text

Analysis of electron mobility in HfO2/TiN gate metal-oxide-semiconductor field effect transistors: The influence of HfO2 thickness, temperature, and oxide charge

Journal of Applied Physics ◽

10.1063/1.3068367 ◽

2009 ◽

Vol 105 (2) ◽

pp. 024510 ◽

Author(s):

M. A. Negara ◽

K. Cherkaoui ◽

P. K. Hurley ◽

C. D. Young ◽

P. Majhi ◽

...

Keyword(s):

Metal Oxide ◽

Electron Mobility ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Download Full-text

The role of Si orientation and temperature on the carrier mobility in metal oxide semiconductor field-effect transistors with ultrathin HfO2 gate dielectrics

Journal of Applied Physics ◽

10.1063/1.2210627 ◽

2006 ◽

Vol 100 (1) ◽

pp. 014504 ◽

Author(s):

B. Mereu ◽

C. Rossel ◽

E. P. Gusev ◽

M. Yang

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Carrier Mobility ◽

Gate Dielectrics ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor

Download Full-text

Mobility Degradation in (110)-Oriented Ultrathin-Body Double-Gate p-Type Metal–Oxide–Semiconductor Field-Effect Transistors with Silicon-on-Insulator Thickness of Less than 5 nm

Japanese Journal of Applied Physics ◽

10.1143/jjap.49.041302 ◽

2010 ◽

Vol 49 (4) ◽

pp. 041302 ◽

Author(s):

Ken Shimizu ◽

Toshiro Hiramoto

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Double Gate ◽

Mobility Degradation ◽

Download Full-text

Effects of Side Surface Roughness on Carrier Mobility in Tri-Gate Single Silicon Nanowire Metal–Oxide–Semiconductor Field-Effect Transistors

Japanese Journal of Applied Physics ◽

10.7567/jjap.52.04cc11 ◽

2013 ◽

Vol 52 (4S) ◽

pp. 04CC11 ◽

Author(s):

Ke Mao ◽

Takuya Saraya ◽

Toshiro Hiramoto

Keyword(s):

Surface Roughness ◽

Metal Oxide ◽

Field Effect ◽

Carrier Mobility ◽

Field Effect Transistors ◽

Silicon Nanowire ◽

Side Surface ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor

Download Full-text

Direct Measurement of Carrier Mobility in Intrinsic Channel Tri-Gate Single Silicon Nanowire Metal–Oxide–Semiconductor Field-Effect Transistors

Japanese Journal of Applied Physics ◽

10.7567/jjap.52.04cc08 ◽

2013 ◽

Vol 52 (4S) ◽

pp. 04CC08

Author(s):

Ke Mao ◽

Takuya Saraya ◽

Toshiro Hiramoto

Keyword(s):

Metal Oxide ◽

Direct Measurement ◽

Field Effect ◽

Carrier Mobility ◽

Field Effect Transistors ◽

Silicon Nanowire ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor

Download Full-text

The temperature dependence of the electron mobility degradation mechanisms in n-channel metal-oxide-semiconductor field effect transistors with ZrO2 and Sm2O3 gate dielectrics

Applied Physics Letters ◽

10.1063/1.2802729 ◽

2007 ◽

Vol 91 (17) ◽

pp. 173510 ◽

Author(s):

Hsiao-shuo Ho ◽

Ingram Yin-ku Chang ◽

Joseph Ya-min Lee

Keyword(s):

Metal Oxide ◽

Temperature Dependence ◽

Electron Mobility ◽

Field Effect ◽

Gate Dielectrics ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Degradation Mechanisms ◽

Mobility Degradation

Download Full-text

Investigation of piezoresistive effect in p-channel metal–oxide–semiconductor field-effect transistors fabricated on circular silicon-on-insulator diaphragms using cost-effective minimal-fab process

Japanese Journal of Applied Physics ◽

10.7567/jjap.57.06hd03 ◽

2018 ◽

Vol 57 (6S1) ◽

pp. 06HD03 ◽

Author(s):

Yongxun Liu ◽

Hiroyuki Tanaka ◽

Norio Umeyama ◽

Kazuhiro Koga ◽

Sommawan Khumpuang ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Cost Effective ◽

Metal Oxide Semiconductor ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Piezoresistive Effect

Download Full-text