Electrical hysteresis in p-GaN metal–oxide–semiconductor capacitor with atomic-layer-deposited Al2O3as gate dielectric

Atomic layer deposited TiO2- and Al2O3-based high-k gate insulator (GI) were examined for the Ge-based metal-oxide-semiconductor capacitor application. The single-layer TiO2 film showed a too high leakage current to be...

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Electrical characteristics of metal-oxide-semiconductor capacitors on p-GaAs using atomic layer deposition of ultrathin HfAlO gate dielectric

Applied Physics Letters ◽

10.1063/1.3007978 ◽

2008 ◽

Vol 93 (19) ◽

pp. 193504 ◽

Cited By ~ 26

Author(s):

Rahul Suri ◽

Bongmook Lee ◽

Daniel J. Lichtenwalner ◽

Nivedita Biswas ◽

Veena Misra

Keyword(s):

Atomic Layer Deposition ◽

Metal Oxide ◽

Gate Dielectric ◽

Atomic Layer ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Electrical Characteristics ◽

Layer Deposition

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GaAs metal-oxide-semiconductor capacitors using atomic layer deposition of HfO2 gate dielectric: Fabrication and characterization

Applied Physics Letters ◽

10.1063/1.2806190 ◽

2007 ◽

Vol 91 (19) ◽

pp. 193503 ◽

Cited By ~ 41

Author(s):

D. Shahrjerdi ◽

D. I. Garcia-Gutierrez ◽

T. Akyol ◽

S. R. Bank ◽

E. Tutuc ◽

...

Keyword(s):

Atomic Layer Deposition ◽

Metal Oxide ◽

Gate Dielectric ◽

Atomic Layer ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Layer Deposition ◽

Fabrication And Characterization

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Well-behaved metal–oxide–semiconductor capacitor characteristics of hafnium silicate films deposited in an atomic layer deposition mode by vapor–liquid hybrid deposition process

Applied Physics Letters ◽

10.1063/1.1762977 ◽

2004 ◽

Vol 84 (25) ◽

pp. 5097-5099 ◽

Cited By ~ 12

Author(s):

Y. Xuan ◽

D. Hojo ◽

T. Yasuda

Keyword(s):

Atomic Layer Deposition ◽

Metal Oxide ◽

Atomic Layer ◽

Deposition Process ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Hafnium Silicate ◽

Layer Deposition ◽

Metal Oxide Semiconductor Capacitor ◽

Deposition Mode

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High-indium-content InGaAs metal-oxide-semiconductor capacitor with amorphous LaAlO3 gate dielectric

Applied Physics Letters ◽

10.1063/1.2776846 ◽

2007 ◽

Vol 91 (9) ◽

pp. 093509 ◽

Cited By ~ 47

Author(s):

N. Goel ◽

P. Majhi ◽

W. Tsai ◽

M. Warusawithana ◽

D. G. Schlom ◽

...

Keyword(s):

Metal Oxide ◽

Gate Dielectric ◽

Indium Content ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

High Indium Content ◽

Metal Oxide Semiconductor Capacitor

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High-performance GaAs metal-oxide-semiconductor capacitor by using NbAlON as high-k gate dielectric

Applied Physics Letters ◽

10.1063/1.4979101 ◽

2017 ◽

Vol 110 (12) ◽

pp. 123506 ◽

Cited By ~ 5

Author(s):

L. N. Liu ◽

H. W. Choi ◽

J. P. Xu ◽

P. T. Lai

Keyword(s):

Metal Oxide ◽

High Performance ◽

Gate Dielectric ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

High K ◽

Metal Oxide Semiconductor Capacitor ◽

High K Gate Dielectric

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Gate-first inversion-type InP metal-oxide-semiconductor field-effect transistors with atomic-layer-deposited Al2O3 gate dielectric

Applied Physics Letters ◽

10.1063/1.2937117 ◽

2008 ◽

Vol 92 (23) ◽

pp. 233508 ◽

Cited By ~ 21

Author(s):

Han Zhao ◽

Davood Shahrjerdi ◽

Feng Zhu ◽

Manhong Zhang ◽

Hyoung-Sub Kim ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Gate Dielectric ◽

Field Effect Transistors ◽

Atomic Layer ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Al2o3 Gate Dielectric

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GaN metal-oxide-semiconductor high-electron-mobility-transistor with atomic layer deposited Al2O3 as gate dielectric

Applied Physics Letters ◽

10.1063/1.1861122 ◽

2005 ◽

Vol 86 (6) ◽

pp. 063501 ◽

Cited By ~ 351

Author(s):

P. D. Ye ◽

B. Yang ◽

K. K. Ng ◽

J. Bude ◽

G. D. Wilk ◽

...

Keyword(s):

Metal Oxide ◽

Electron Mobility ◽

Gate Dielectric ◽

Atomic Layer ◽

High Electron Mobility Transistor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

High Electron ◽

High Electron Mobility

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Plasma-Nitrided Ga2O3(Gd2O3) as Interfacial Passivation Layer for InGaAs Metal–Oxide– Semiconductor Capacitor With HfTiON Gate Dielectric

IEEE Transactions on Electron Devices ◽

10.1109/ted.2015.2396972 ◽

2015 ◽

Vol 62 (4) ◽

pp. 1235-1240 ◽

Cited By ~ 9

Author(s):

Li-Sheng Wang ◽

Jing-Ping Xu ◽

Lu Liu ◽

Han-Han Lu ◽

Pui-To Lai ◽

...

Keyword(s):

Metal Oxide ◽

Gate Dielectric ◽

Metal Oxide Semiconductor ◽

Passivation Layer ◽

Oxide Semiconductor ◽

Metal Oxide Semiconductor Capacitor

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Improved electrical properties of metal-oxide-semiconductor capacitor with HfTiON gate dielectric by using HfSiON interlayer

Applied Physics Letters ◽

10.1063/1.2798248 ◽

2007 ◽

Vol 91 (15) ◽

pp. 152905 ◽

Cited By ~ 7

Author(s):

J. P. Xu ◽

F. Ji ◽

C. X. Li ◽

P. T. Lai ◽

J. G. Guan ◽

...

Keyword(s):

Electrical Properties ◽

Metal Oxide ◽

Gate Dielectric ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Metal Oxide Semiconductor Capacitor

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