Development of piezoresistive PDMS/MWCNT foam nanocomposite sensor with ultrahigh flexibility and compressibility

Polymer foam nanocomposites attract great interest in many wide ranges of biomedical and healthcare monitoring applications. In this study, we investigated the effect of porosity and multi-walled carbon nanotube (MWCNT) content on the piezoresistivity, sensitivity, and mechanical properties of Polydimethylsiloxane (PDMS)/MWCNT foam nanocomposite. The foam nanocomposites were fabricated by particulate leaching method and their electrical and mechanical characteristics were investigated using the different porosity levels (60% and 70%) and different conductive nanofiller contents (0.5 wt.% and 1 wt.%). The foam nanocomposites with 0.5 wt.% MWCNT content and 60% porosity possessed higher pressure sensitivity, higher gage factor, and lower electrical hysteresis along with higher mechanical properties. Moreover, fabricated PDMS/MWCNT foam nanocomposite demonstrated high flexibility, high compressibility, and high recoverability in addition to limited mechanical hysteresis (less than 3%) with a large dynamic sensing range. Contrary to the existing foam nanocomposite samples in the literature, PDMS/MWCNT foam nanocomposites withstood higher pressure ranges (3.5–5 MPa) at limited thickness (average 2.3 mm) without experiencing noticeable macroscopic damage.

Structural, electrical, and magnetic study of La-, Eu-, and Er- doped bismuth ferrite nanomaterials obtained by solution combustion synthesis

In this work, the multiferroic bismuth ferrite materials Bi0.9RE0.1FeO3 doped by rare-earth (RE = La, Eu, and Er) elements were obtained by the solution combustion synthesis. Structure, electrical, and magnetic properties of prepared samples were investigated by X-ray photoelectron spectroscopy, Mössbauer spectroscopy, electrical hysteresis measurement, broadband dielectric spectroscopy, and SQUID magnetometry. All obtained nanomaterials are characterized by spontaneous electrical polarization, which confirmed their ferroelectric properties. Investigation of magnetic properties at 300.0 K and 2.0 K showed that all investigated Bi0.9RE0.1FeO3 ferrites possess significantly higher magnetization in comparison to bismuth ferrites obtained by different methods. The highest saturation magnetisation of 5.161 emu/g at 300.0 K was observed for the BLaFO sample, while at 2.0 K it was 12.07 emu/g for the BErFO sample. Several possible reasons for these phenomena were proposed and discussed.

Temperature-dependent device properties of γ-CuI and β-Ga2O3 heterojunctions

Temperature-dependent studies of Ga2O3-based heterojunction devices are important in understanding its carrier transport mechanism, junction barrier potential, and stability at higher temperatures. In this study, we investigated the temperature-dependent device characteristics of the p-type γ-copper iodide (γ-CuI)/n-type β-gallium oxide (β‐Ga2O3) heterojunctions, thereby revealing their interface properties. The fabricated γ-CuI/β-Ga2O3 heterojunction showed excellent diode characteristics with a high rectification ratio and low reverse saturation current at 298 K in the presence of a large barrier height (0.632 eV). The temperature-dependent device characteristics were studied in the temperature range 273–473 K to investigate the heterojunction interface. With an increase in temperature, a gradual decrease in the ideality factor and an increase in the barrier height were observed, indicating barrier inhomogeneity at the heterojunction interface. Furthermore, the current–voltage measurement showed electrical hysteresis for the reverse saturation current, although it was not observed for the forward bias current. The presence of electrical hysteresis for the reverse saturation current and of the barrier inhomogeneity in the temperature-dependent characteristics indicates the presence of some level of interface states for the γ-CuI/β‐Ga2O3 heterojunction device. Thus, our study showed that the electrical hysteresis can be correlated with temperature-dependent electrical characteristics of the β‐Ga2O3-based heterojunction device, which signifies the presence of surface defects and interface states. Article Highlights We revealed the interface properties of p-type γ-copper iodide (γ-CuI) and n-type β-gallium oxide (β-Ga2O3) heterojunction. The developed heterostructure showed a large barrier height (0.632 eV) at the interface, which is stable at a temperature as high as 473 K. We confirmed the current transport mechanism at the interface of the heterojunction by analyzing the temperature dependent current–voltage characterization. Graphic abstract

Rapid custom prototyping of soft poroelastic biosensor for simultaneous epicardial recording and imaging

The growing need for the implementation of stretchable biosensors in the body has driven rapid prototyping schemes through the direct ink writing of multidimensional functional architectures. Recent approaches employ biocompatible inks that are dispensable through an automated nozzle injection system. However, their application in medical practices remains challenged in reliable recording due to their viscoelastic nature that yields mechanical and electrical hysteresis under periodic large strains. Herein, we report sponge-like poroelastic silicone composites adaptable for high-precision direct writing of custom-designed stretchable biosensors, which are soft and insensitive to strains. Their unique structural properties yield a robust coupling to living tissues, enabling high-fidelity recording of spatiotemporal electrophysiological activity and real-time ultrasound imaging for visual feedback. In vivo evaluations of custom-fit biosensors in a murine acute myocardial infarction model demonstrate a potential clinical utility in the simultaneous intraoperative recording and imaging on the epicardium, which may guide definitive surgical treatments.

Hysteresis in As-Synthesized MoS2 Transistors: Origin and Sensing Perspectives

Two-dimensional materials, including molybdenum disulfide (MoS2), present promising sensing and detecting capabilities thanks to their extreme sensitivity to changes in the environment. Their reduced thickness also facilitates the electrostatic control of the channel and opens the door to flexible electronic applications. However, these materials still exhibit integration difficulties with complementary-MOS standardized processes and methods. The device reliability is compromised by gate insulator selection and the quality of the metal/semiconductor and semiconductor/insulator interfaces. Despite some improvements regarding mobility, hysteresis and Schottky barriers having been reported thanks to metal engineering, vertically stacked heterostructures with compatible thin-layers (such as hexagonal boron nitride or device encapsulation) variability is still an important constraint to sensor performance. In this work, we fabricated and extensively characterized the reliability of as-synthesized back-gated MoS2 transistors. Under atmospheric and room-temperature conditions, these devices present a wide electrical hysteresis (up to 5 volts) in their transfer characteristics. However, their performance is highly influenced by the temperature, light and pressure conditions. The singular signature in the time response of the devices points to adsorbates and contaminants inducing mobile charges and trapping/detrapping carrier phenomena as the mechanisms responsible for time-dependent current degradation. Far from being only a reliability issue, we demonstrated a method to exploit this device response to perform light, temperature and/or pressure sensors in as-synthesized devices. Two orders of magnitude drain current level differences were demonstrated by comparing device operation under light and dark conditions while a factor up to 105 is observed at vacuum versus atmospheric pressure environments.

Rapid Custom Prototyping of Soft Poroelastic Biosensor for Simultaneous Epicardial Recording and Imaging

The growing need for the implementation of stretchable biosensors in the human body and organ systems has driven a new rapid prototyping scheme through the direct ink writing (DIW) of multidimensional functional architectures in an arbitrary shape and size to meet the requirement of adapting the geometric nonlinearity of a specific biological site. Recent approaches involve the use of biocompatible viscoelastic inks that are dispensable through an automated nozzle injection system. However, their pragmatic application remains challenged in particular medical practices that demand long-term reliable recording under periodic large strain cycles, such as the cardiac cycle, due to their viscoelastic nature that produces both mechanical and electrical hysteresis. Herein, we report a new class of a poroelastic silicone composite that is adaptable for high-precision DIW of a custom-designed biosensor, which is exceptionally soft and insensitive to mechanical strain without generating significant hysteresis. The unique structural property of the composite material yields a robust and seamless coupling to living tissues, thereby enabling both high-fidelity recording of spatiotemporal electrophysiological activity and real-time ultrasound imaging for visual feedback. In vivo evaluation of a custom-fit biosensor in a murine acute myocardial infarction model demonstrates a potential clinical utility in the simultaneous intraoperative recording and imaging on the epicardial surface, which may guide a definitive surgical treatment.