Stable and High-Performance Indium Oxide Thin-Film Transistor by Ga Doping

2016 ◽  
Vol 63 (3) ◽  
pp. 1078-1084 ◽  
Author(s):  
Youn Goo Kim ◽  
Taehun Kim ◽  
Christophe Avis ◽  
Seung-Hun Lee ◽  
Jin Jang
Keyword(s):  
Thin Film ◽  
Indium Oxide ◽  
High Performance ◽  
Thin Film Transistor ◽  
Oxide Thin Film ◽  
Ga Doping ◽  
Indium Oxide Thin Film

High-Performance Indium Oxide Thin Film Transistor with ITO Source/Drain Electrodes Fabricated by Reactive Sputtering

2014 ◽  
Vol 852 ◽  
pp. 319-323
Author(s):  
Xin An Zhang ◽  
Xian Kun Yu ◽  
Jun Xia Zhai ◽  
Yang Jiao ◽  
Ling Hong Ding ◽  
...  
Keyword(s):  
Thin Film ◽  
Indium Oxide ◽  
High Performance ◽  
Thin Film Transistor ◽  
Electrical Measurement ◽  
Oxide Thin Film ◽  
X Ray Diffraction ◽  
Channel Mobility ◽  
Active Channel ◽  
Indium Oxide Thin Film

We report on the fabrication of bottom gate thin film transistors with indium oxide (In2O3) thin films as the active channel layers. The films were deposited on SiO2/Si substrate at room temperature by direct current (DC) magnetron sputtering. The ITO films were used as source and drain electrodes. The In2O3 films were structurally characterized by x-ray diffraction (XRD) and scanning electron microscopy (SEM) techniques. The results revealed that the films were amorphous in nature. Electrical measurement has revealed that the devices operate as an n-channel enhancement mode and exhibit an on/off ratio of 106. The threshold voltage is-3V and the channel mobility on the order of 22.3 cm2/Vs has been determined.

High Performance Solution-Processed Indium Oxide Thin-Film Transistors

2008 ◽  
Vol 130 (38) ◽  
pp. 12580-12581 ◽  
Author(s):  
Hyun Sung Kim ◽  
Paul D. Byrne ◽  
Antonio Facchetti ◽  
Tobin J. Marks
Keyword(s):  
Thin Film ◽  
Indium Oxide ◽  
Thin Film Transistors ◽  
High Performance ◽  
Oxide Thin Film ◽  
Solution Processed ◽  
Indium Oxide Thin Film

Role of tungsten dopants in indium oxide thin-film transistor on radiation hardness technology

2020 ◽  
Vol 116 (18) ◽  
pp. 182104 ◽  
Author(s):  
Dun-Bao Ruan ◽  
Po-Tsun Liu ◽  
Kai-Jhih Gan ◽  
Yu-Chuan Chiu ◽  
Chih-Chieh Hsu ◽  
...  
Keyword(s):  
Thin Film ◽  
Indium Oxide ◽  
Thin Film Transistor ◽  
Radiation Hardness ◽  
Oxide Thin Film ◽  
Indium Oxide Thin Film

Electrolyte-Gated Indium Oxide Thin Film Transistor Based Biosensor With Low Operation Voltage

2019 ◽  
Vol 66 (8) ◽  
pp. 3554-3559 ◽  
Author(s):  
Peng Yang ◽  
Guangshuo Cai ◽  
Xinzhong Wang ◽  
Yanli Pei
Keyword(s):  
Thin Film ◽  
Indium Oxide ◽  
Thin Film Transistor ◽  
Oxide Thin Film ◽  
Indium Oxide Thin Film

Facile patterning of amorphous indium oxide thin films based on a gel-like aqueous precursor for low-temperature, high performance thin-film transistors

2016 ◽  
Vol 4 (10) ◽  
pp. 2072-2078 ◽  
Author(s):  
Yuzhi Li ◽  
Linfeng Lan ◽  
Peng Xiao ◽  
Zhenguo Lin ◽  
Sheng Sun ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Low Temperature ◽  
Indium Oxide ◽  
Thin Film Transistors ◽  
High Performance ◽  
Oxide Thin Film ◽  
Oxide Thin Films ◽  
Indium Oxide Thin Film

Facile patterning of chloride-based precursor films for low-temperature, high performance indium oxide thin-film transistors.

Fabrication of high-performance, low-temperature solution processed amorphous indium oxide thin-film transistors using a volatile nitrate precursor

2015 ◽  
Vol 3 (4) ◽  
pp. 854-860 ◽  
Author(s):  
Chang-Ho Choi ◽  
Seung-Yeol Han ◽  
Yu-Wei Su ◽  
Zhen Fang ◽  
Liang-Yu Lin ◽  
...  
Keyword(s):  
Thin Film ◽  
Low Temperature ◽  
Indium Oxide ◽  
Thin Film Transistors ◽  
High Performance ◽  
Oxide Thin Film ◽  
Annealing Temperatures ◽  
Nitrate Precursor ◽  
Temperature Solution ◽  
Indium Oxide Thin Film

In this study, we fabricate amorphous indium oxide thin film transistors (TFTs) on a display glass substrate at various annealing temperatures from 200 °C to 300 °C.

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