Role of tungsten dopants in indium oxide thin-film transistor on radiation hardness technology

2020 ◽  
Vol 116 (18) ◽  
pp. 182104 ◽  
Author(s):  
Dun-Bao Ruan ◽  
Po-Tsun Liu ◽  
Kai-Jhih Gan ◽  
Yu-Chuan Chiu ◽  
Chih-Chieh Hsu ◽  
...  
Keyword(s):  
Thin Film ◽  
Indium Oxide ◽  
Thin Film Transistor ◽  
Radiation Hardness ◽  
Oxide Thin Film ◽  
Indium Oxide Thin Film

Electrolyte-Gated Indium Oxide Thin Film Transistor Based Biosensor With Low Operation Voltage

2019 ◽  
Vol 66 (8) ◽  
pp. 3554-3559 ◽  
Author(s):  
Peng Yang ◽  
Guangshuo Cai ◽  
Xinzhong Wang ◽  
Yanli Pei
Keyword(s):  
Thin Film ◽  
Indium Oxide ◽  
Thin Film Transistor ◽  
Oxide Thin Film ◽  
Indium Oxide Thin Film

High mobility ultra-thin crystalline indium oxide thin film transistor using atomic layer deposition

2018 ◽  
Vol 113 (11) ◽  
pp. 112102 ◽  
Author(s):  
Jongchan Lee ◽  
Jaehyun Moon ◽  
Jae-Eun Pi ◽  
Seong-Deok Ahn ◽  
Himchan Oh ◽  
...  
Keyword(s):  
Thin Film ◽  
Atomic Layer Deposition ◽  
Indium Oxide ◽  
Thin Film Transistor ◽  
High Mobility ◽  
Atomic Layer ◽  
Oxide Thin Film ◽  
Layer Deposition ◽  
Indium Oxide Thin Film

Indium oxide thin-film transistor by reactive ion beam assisted deposition

2008 ◽  
Vol 205 (8) ◽  
pp. 1925-1928 ◽  
Author(s):  
Y. Vygranenko ◽  
K. Wang ◽  
M. Vieira ◽  
A. Nathan
Keyword(s):  
Thin Film ◽  
Indium Oxide ◽  
Ion Beam ◽  
Thin Film Transistor ◽  
Oxide Thin Film ◽  
Ion Beam Assisted Deposition ◽  
Indium Oxide Thin Film

High-Performance Indium Oxide Thin Film Transistor with ITO Source/Drain Electrodes Fabricated by Reactive Sputtering

2014 ◽  
Vol 852 ◽  
pp. 319-323
Author(s):  
Xin An Zhang ◽  
Xian Kun Yu ◽  
Jun Xia Zhai ◽  
Yang Jiao ◽  
Ling Hong Ding ◽  
...  
Keyword(s):  
Thin Film ◽  
Indium Oxide ◽  
High Performance ◽  
Thin Film Transistor ◽  
Electrical Measurement ◽  
Oxide Thin Film ◽  
X Ray Diffraction ◽  
Channel Mobility ◽  
Active Channel ◽  
Indium Oxide Thin Film

We report on the fabrication of bottom gate thin film transistors with indium oxide (In2O3) thin films as the active channel layers. The films were deposited on SiO2/Si substrate at room temperature by direct current (DC) magnetron sputtering. The ITO films were used as source and drain electrodes. The In2O3 films were structurally characterized by x-ray diffraction (XRD) and scanning electron microscopy (SEM) techniques. The results revealed that the films were amorphous in nature. Electrical measurement has revealed that the devices operate as an n-channel enhancement mode and exhibit an on/off ratio of 106. The threshold voltage is-3V and the channel mobility on the order of 22.3 cm2/Vs has been determined.

scholarly journals High mobility polycrystalline indium oxide thin-film transistors by means of plasma-enhanced atomic layer deposition

2016 ◽  
Vol 4 (28) ◽  
pp. 6873-6880 ◽  
Author(s):  
H.-I. Yeom ◽  
J. B. Ko ◽  
G. Mun ◽  
S.-H. Ko Park
Keyword(s):  
Thin Film ◽  
Atomic Layer Deposition ◽  
Indium Oxide ◽  
Thin Film Transistor ◽  
High Mobility ◽  
Atomic Layer ◽  
Oxide Thin Film ◽  
Layer Deposition ◽  
Polycrystalline Phase ◽  
Indium Oxide Thin Film

A thin-film transistor with a 5 nm-thick indium oxide active layer deposited by plasma-enhanced atomic layer deposition (PEALD) showed outstanding performance even with a polycrystalline phase.

Stable and High-Performance Indium Oxide Thin-Film Transistor by Ga Doping

2016 ◽  
Vol 63 (3) ◽  
pp. 1078-1084 ◽  
Author(s):  
Youn Goo Kim ◽  
Taehun Kim ◽  
Christophe Avis ◽  
Seung-Hun Lee ◽  
Jin Jang
Keyword(s):  
Thin Film ◽  
Indium Oxide ◽  
High Performance ◽  
Thin Film Transistor ◽  
Oxide Thin Film ◽  
Ga Doping ◽  
Indium Oxide Thin Film
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