The Role of Silicon Substrate on the Leakage Current Through GaN-on-Si Epitaxial Layers

2018 ◽  
Vol 65 (1) ◽  
pp. 51-58 ◽  
Author(s):  
Luca Sayadi ◽  
Giuseppe Iannaccone ◽  
Oliver Haberlen ◽  
Gianluca Fiori ◽  
Manuel Tomberger ◽  
...  
Keyword(s):  
Leakage Current ◽  
Silicon Substrate ◽  
Epitaxial Layers ◽  
Gan On Si

Role of electron injection on vertical leakage in GaN-on-Si epitaxial layers

2019 ◽  
Vol 128 ◽  
pp. 199-203 ◽  
Author(s):  
Chunyan Song ◽  
Xuelin Yang ◽  
Panfeng Ji ◽  
Jun Tang ◽  
Anqi Hu ◽  
...  
Keyword(s):  
Electron Injection ◽  
Epitaxial Layers ◽  
Vertical Leakage ◽  
Gan On Si

A Pictorial Tracking of Basal Plane Dislocations in SiC Epitaxy

2010 ◽  
Vol 645-648 ◽  
pp. 271-276 ◽  
Author(s):  
Robert E. Stahlbush ◽  
Rachael L. Myers-Ward ◽  
Brenda L. VanMil ◽  
D. Kurt Gaskill ◽  
Charles R. Eddy
Keyword(s):  
Epitaxial Growth ◽  
Basal Plane ◽  
Reduction Process ◽  
Epitaxial Layers ◽  
In Situ Growth ◽  
Half Loop ◽  
Insight Into

The recently developed technique of UVPL imaging has been used to track the path of basal plane dislocations (BPDs) in SiC epitaxial layers. The glide of BPDs during epitaxial growth has been observed and the role of this glide in forming half-loop arrays has been examined. The ability to track the path of BPDs through the epitaxy has made it possible to develop a BPD reduction process for epitaxy grown on 8° offcut wafers, which uses an in situ growth interrupt and has achieved a BPD reduction of > 98%. The images also provide insight into the strong BPD reduction that typically occurs in epitaxy grown on 4° offcut wafers.

Extrinsic Gettering with Epitaxial Misfit Dislocations

1984 ◽  
Vol 36 ◽  
Author(s):  
Ali S. M. Salih ◽  
W. Maszara ◽  
H. J. Kim ◽  
G. A. Rozgonyi
Keyword(s):  
Dislocation Density ◽  
Leakage Current ◽  
Schottky Diode ◽  
Impurity Concentration ◽  
Active Surface ◽  
Epitaxial Layers ◽  
Misfit Dislocations ◽  
Chemical Analyses ◽  
Defect Reactions ◽  
Metallic Species

ABSTRACTNew results are presented on Ge doped Si epitaxial layers which contain interfacial misfit dislocations. Microscopic and chemical analyses showed the preferential gettering of several metallic species (Au, Cu, Ni, and Fe) at the misfit dislocations with semiquantitative correlation between dislocation density and the captured impurity concentration. Wafer curvature was measured and shown to be less than that for typical Si3N4 and SiO2 layers used in IC fabrication. The reduction of Schottky diode leakage current has been clearly demonstrated and attributed to gettering of residual impurities, as well as signifying that, the active surface device region is not deleteriously affected by spurious defect reactions at the buried epitaxial interface.

Nano-Scale Impact Dynamics of Ultra-Thin Bonded Layers

2009 ◽  
Author(s):  
Mircea Teodorescu ◽  
Stephanos Theodossiades ◽  
Homer Rahnejat
Keyword(s):  
Silicon Substrate ◽  
Viscoelastic Behavior ◽  
Impact Dynamics ◽  
Protective Layers ◽  
Nano Scale

The paper highlights the complex issues involved in impact dynamics at nano-scale, prevalent in MEMS. The role of protective layers on the silicon substrate is investigated. It is found that the expected viscoelastic behavior of these layers is not activated due to the very short (almost instantaneous) impact times.

scholarly journals Role of near-field enhancement in plasmonic laser nanoablation using gold nanorods on a silicon substrate: comment

2011 ◽  
Vol 19 (7) ◽  
pp. 6177 ◽  
Author(s):  
E. Boulais ◽  
A. Robitaille ◽  
P. Desjeans-Gauthier ◽  
M. Meunier
Keyword(s):  
Gold Nanorods ◽  
Silicon Substrate ◽  
Near Field ◽  
Field Enhancement
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