Role of B-site disorder in the properties of lead-free Na0.5Bi0.5(Mg1/3Nb2/3)O3 ceramic: A possible electrocaloric material with low leakage current

The preparation and characterization of ZnO-Pr6O11-Co3O4-TiO2 (ZPCT) based varistor materials with different doping levels of TiO2 and Pr6O11 were investigated. The results reveal that: (1) TiO2 is an important additive, acting as an inhibitor of ZnO grain growth. The doping of appropriate amount of TiO2 can significantly improve the nonlinear properties and decreases the leakage current of the varistors, achieving a relatively high nonlinear exponent and low leakage current with 1.0 mol% TiO2 doped. (2) The oxide of Pr6O11 microstructurally plays the role of inhibition in grain growth. The doping of appropriate amount of Pr6O11 can improve the nonlinear property, and decrease the leakage currents of the varistors, acquiring the optimum results with 1.5 mol% Pr6O11 doped.

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High Curie Temperature BiFeO3-BaTiO3 Lead-free Piezoelectric Ceramics: Ga3+ Doping and Enhanced Insulation Properties

10.21203/rs.3.rs-98834/v1 ◽

2020 ◽

Author(s):

Xiao-yan Peng ◽

Yu-Cheng Tang ◽

Boping Zhang ◽

Bo-wei Xun ◽

Jing-Ru Yu

Keyword(s):

Curie Temperature ◽

Leakage Current ◽

Piezoelectric Properties ◽

Lead Free ◽

High Resistivity ◽

High Curie Temperature ◽

Low Oxygen ◽

Low Leakage ◽

Low Leakage Current ◽

Leakage Mechanism

Abstract BiFeO3-BaTiO3 (BF-BT) is a promising high temperature lead-free piezoceramics due to their excellent piezoelectric properties with high Curie temperature (TC>500 °C). While the high leakage current density severely restricted its application. In this work, the leakage mechanism relative to the dielectric properties and piezoelectric properties were systematically studied with a special emphasis on gallium (Ga3+) adding effect in 0.7BiFe(1-x)GaxO3-0.3BaTiO3 (BFGax-BT, 0≤x≤0.10) ceramics. A high resistivity (ρ) of 2.73×1012 Ω·cm-1 and low leakage current (J) of 7.78×10-9 A·cm-2 were achieved at x=0.06, which attributes to the low oxygen vacancies (B). The J-E curves reveal different type of conduction process in BFGax-BT ceramics, including Ohmic conduction, space-charge-limited conduction (SCLC) mechanism and interface-limited Schottky emission. The BFGa0.06-BT ceramic exhibits excellent piezoelectric performance: d33=174 pC·N-1, TC=497 °C, kp=29 %.

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High nonlinearity and low leakage current SnO2 varistor ceramics by co-doping with yttrium and tantalum

Materials Letters ◽

10.1016/j.matlet.2020.129120 ◽

2021 ◽

Vol 285 ◽

pp. 129120

Author(s):

Wenxin Liang ◽

Hongfeng Zhao ◽

Xiaoji Meng ◽

Shaohua Fan ◽

Qingyun Xie

Keyword(s):

Leakage Current ◽

Co Doping ◽

High Nonlinearity ◽

Low Leakage ◽

Low Leakage Current

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Development of high k/III-V (InGaAs, InAs, InSb) structures for future low power, high speed device applications

MRS Proceedings ◽

10.1557/opl.2013.585 ◽

2013 ◽

Vol 1538 ◽

pp. 291-302

Author(s):

Edward Yi Chang ◽

Hai-Dang Trinh ◽

Yueh-Chin Lin ◽

Hiroshi Iwai ◽

Yen-Ku Lin

Keyword(s):

Low Power ◽

Leakage Current ◽

High Speed ◽

High Performance ◽

Gate Oxide ◽

Chemical Cleaning ◽

Low Leakage ◽

Low Leakage Current ◽

High K ◽

Cleaning Methods

ABSTRACTIII-V compounds such as InGaAs, InAs, InSb have great potential for future low power high speed devices (such as MOSFETs, QWFETs, TFETs and NWFETs) application due to their high carrier mobility and drift velocity. The development of good quality high k gate oxide as well as high k/III-V interfaces is prerequisite to realize high performance working devices. Besides, the downscaling of the gate oxide into sub-nanometer while maintaining appropriate low gate leakage current is also needed. The lack of high quality III-V native oxides has obstructed the development of implementing III-V based devices on Si template. In this presentation, we will discuss our efforts to improve high k/III-V interfaces as well as high k oxide quality by using chemical cleaning methods including chemical solutions, precursors and high temperature gas treatments. The electrical properties of high k/InSb, InGaAs, InSb structures and their dependence on the thermal processes are also discussed. Finally, we will present the downscaling of the gate oxide into sub-nanometer scale while maintaining low leakage current and a good high k/III-V interface quality.

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Barium Zirconate Nickelate as the Gate Dielectric for Low-Leakage Current Organic Transistors

IEEE Transactions on Electron Devices ◽

10.1109/ted.2017.2786225 ◽

2018 ◽

Vol 65 (2) ◽

pp. 680-686 ◽

Cited By ~ 1

Author(s):

Cheng-Jung Lee ◽

Ke-Jing Lee ◽

Yu-Chi Chang ◽

Li-Wen Wang ◽

Der-Wei Chou ◽

...

Keyword(s):

Leakage Current ◽

Gate Dielectric ◽

Organic Transistors ◽

Barium Zirconate ◽

Low Leakage ◽

Low Leakage Current

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High k PVP titanium dioxide composite dielectric with low leakage current for thin film transistor

Organic Electronics ◽

10.1016/j.orgel.2021.106413 ◽

2021 ◽

pp. 106413

Author(s):

Yuexin Yang ◽

Zhuohui Xu ◽

Tian Qiu ◽

Honglong Ning ◽

Jinyao Zhong ◽

...

Keyword(s):

Thin Film ◽

Titanium Dioxide ◽

Leakage Current ◽

Thin Film Transistor ◽

Low Leakage ◽

Low Leakage Current ◽

High K

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Large-size (1.7 × 1.7 mm2) β-Ga2O3 field-plated trench MOS-type Schottky barrier diodes with 1.2 kV breakdown voltage and 109 high on/off current ratio

Applied Physics Express ◽

10.35848/1882-0786/ac4080 ◽

2021 ◽

Vol 15 (1) ◽

pp. 016501

Author(s):

Fumio Otsuka ◽

Hironobu Miyamoto ◽

Akio Takatsuka ◽

Shinji Kunori ◽

Kohei Sasaki ◽

...

Keyword(s):

Schottky Barrier ◽

Leakage Current ◽

Schottky Barrier Diodes ◽

Wafer Level ◽

Current Ratio ◽

Field Plate ◽

Low Leakage ◽

Large Size ◽

Forward Current ◽

Low Leakage Current

Abstract We fabricated high forward and low leakage current trench MOS-type Schottky barrier diodes (MOSSBDs) in combination with a field plate on a 12 μm thick epitaxial layer grown by halide vapor phase epitaxy on β-Ga2O3 (001) substrate. The MOSSBDs, measuring 1.7 × 1.7 mm2, exhibited a forward current of 2 A (70 A cm−2) at 2 V forward voltage and a leakage current of 5.7 × 10–10 A at −1.2 kV reverse voltage (on/off current ratio of > 109) with an ideality factor of 1.05 and wafer-level specific on-resistance of 17.1 mΩ · cm2.

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