Erratum to “Large-Signal Model of Graphene Field-Effect Transistors—Part I: Compact Modeling of GFET Intrinsic Capacitances” [Jul 16 2936-2941]

2019 ◽  
Vol 66 (5) ◽  
pp. 2459-2459 ◽  
Author(s):  
Francisco Pasadas ◽  
David Jimenez
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Compact Modeling ◽  
Large Signal ◽  
Signal Model

scholarly journals Large-signal model of 2DFETs: compact modeling of terminal charges and intrinsic capacitances

2019 ◽  
Vol 3 (1) ◽  
Author(s):  
Francisco Pasadas ◽  
Enrique G. Marin ◽  
Alejandro Toral-Lopez ◽  
Francisco G. Ruiz ◽  
Andrés Godoy ◽  
...  
Keyword(s):  
Field Effect ◽  
Carrier Transport ◽  
Field Effect Transistors ◽  
Current Model ◽  
Diffusion Mechanism ◽  
Drain Current ◽  
Compact Modeling ◽  
Large Signal ◽  
Modeling Framework ◽  
Partition Scheme

AbstractWe present a physics-based circuit-compatible model for double-gated two-dimensional semiconductor-based field-effect transistors, which provides explicit expressions for the drain current, terminal charges, and intrinsic capacitances. The drain current model is based on the drift-diffusion mechanism for the carrier transport and considers Fermi–Dirac statistics coupled with an appropriate field-effect approach. The terminal charge and intrinsic capacitance models are calculated adopting a Ward–Dutton linear charge partition scheme that guarantees charge conservation. It has been implemented in Verilog-A to make it compatible with standard circuit simulators. In order to benchmark the proposed modeling framework we also present experimental DC and high-frequency measurements of a purposely fabricated monolayer MoS2-FET showing excellent agreement between the model and the experiment and thus demonstrating the capabilities of the combined approach to predict the performance of 2DFETs.

scholarly journals Physics-Based DC Compact Modeling of Schottky Barrier and Reconfigurable Field-Effect Transistors

2021 ◽  
pp. 1-1
Author(s):  
Christian Roemer ◽  
Ghader Darbandy ◽  
Mike Schwarz ◽  
Jens Trommer ◽  
Andre Heinzig ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Compact Modeling

scholarly journals Collapse and large signal modelling of GaAs field effect transistors at 77 K

1994 ◽  
Vol 04 (C6) ◽  
pp. C6-165-C6-170
Author(s):  
J. Verdier ◽  
O. Llopis ◽  
J. M. Dienot ◽  
R. Plana ◽  
Ph. Andre ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Large Signal ◽  
Signal Modelling
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