Large-signal and small-signal models for arbitrarily-doped four-terminal field-effect transistors

1966 ◽  
Vol ED-13 (12) ◽  
pp. 819-829 ◽  
Author(s):  
F.A. Lindholm ◽  
P.R. Gray
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Small Signal ◽  
Large Signal ◽  
Signal Models

scholarly journals A New Method to Extract Gate Bias-Dependent Parasitic Resistances in GaAs pHEMTs

Electronics ◽  
2019 ◽  
Vol 8 (3) ◽  
pp. 266
Author(s):  
Ruirui Dang ◽  
Lijie Yang ◽  
Zhihao Lv ◽  
Chunyi Song ◽  
Zhiwei Xu
Keyword(s):  
Parameter Extraction ◽  
New Method ◽  
Small Signal ◽  
Gate Bias ◽  
Large Signal ◽  
S Parameter ◽  
Proposed Model ◽  
Measurement Results ◽  
Parasitic Parameter ◽  
Signal Models

Accurate large signal GaAs pHEMT models are essential for devices’ performance analysis and microwave circuit design. This, in turn, mandates precise small signal models. However, the accuracy of small signal models strongly depends on reliable parasitic parameter extraction of GaAs pHEMT, which also greatly influences the extraction of intrinsic elements. Specifically, the parasitic source and drain resistances, R s and R d , are gate bias-dependent, due to the two-dimensional charge variations. In this paper, we propose a new method to extract R s and R d directly from S-parameter measurements of the device under test (DUT), which save excessive measurements and complicated parameter extraction. We have validated the proposed method in both simulation and on-wafer measurement, which achieves better accuracy than the existing state-of-the-art in a frequency range of 0.5–40 GHz. Furthermore, we develop a GaAs pHEMT power amplifier (PA) to further validate the developed model. The measurement results of the PA at 9–15 GHz agree with the simulation results using the proposed model.

scholarly journals Small-Signal Capacitance and Current Parameter Modeling in Large-Scale High-Frequency Graphene Field-Effect Transistors

2013 ◽  
Vol 60 (6) ◽  
pp. 1799-1806 ◽  
Author(s):  
Gennady I. Zebrev ◽  
Alexander A. Tselykovskiy ◽  
Daria K. Batmanova ◽  
Evgeny V. Melnik
Keyword(s):  
High Frequency ◽  
Field Effect ◽  
Large Scale ◽  
Field Effect Transistors ◽  
Small Signal ◽  
Current Parameter

Analyses on Small-Signal Parameters and Radio-Frequency Modeling of Gate-All-Around Tunneling Field-Effect Transistors

2011 ◽  
Vol 58 (12) ◽  
pp. 4164-4171 ◽  
Author(s):  
Seongjae Cho ◽  
Jae Sung Lee ◽  
Kyung Rok Kim ◽  
Byung-Gook Park ◽  
James S. Harris ◽  
...  
Keyword(s):  
Radio Frequency ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Small Signal ◽  
Signal Parameters ◽  
Tunneling Field Effect Transistors

First Small-Signal Data of GaN-Based p-Channel Heterostructure Field Effect Transistors

2013 ◽  
Vol 52 (12R) ◽  
pp. 128001 ◽  
Author(s):  
Herwig Hahn ◽  
Benjamin Reuters ◽  
Alexander Pooth ◽  
Achim Noculak ◽  
Holger Kalisch ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Small Signal ◽  
Heterostructure Field Effect Transistors
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