Pulse-Shadowing Based Thermal Balancing in Multichip Modules

Author(s):  
Victor N Ferreira ◽  
Markus Andresen ◽  
Braz Cardoso ◽  
Marco Liserre
Keyword(s):  
1995 ◽  
Vol 06 (03) ◽  
pp. 509-538 ◽  
Author(s):  
BERNHARD M. RIESS ◽  
ANDREAS A. SCHOENE

A new layout design system for multichip modules (MCMs) consisting of three components is described. It includes a k-way partitioning approach, an algorithm for pin assignment, and a placement package. For partitioning, we propose an analytical technique combined with a problem-specific multi-way ratio cut method. This method considers fixed module-level pad positions and assigns the cells to regularly arranged chips on the MCM substrate. In the subsequent pin assignment step the chip-level pads resulting from cut nets are positioned on the chip borders. Pin assignment is performed by an efficient algorithm, which profits from the cell coordinates generated by the analytical technique. Global and final placement for each chip is computed by the state-of-the-art placement tools GORDIANL and DOMINO. For the first time, results for MCM layout designs of benchmark circuits with up to 100,000 cells are presented. They show a small number of required chip-level pads, which is the most restricted resource in MCM design, and short total wire lengths.


1992 ◽  
Vol 275 ◽  
Author(s):  
G. Cui ◽  
C. P. Beetz ◽  
B. A. Lincoln ◽  
P. S. Kirlin

ABSTRACTThe deposition of in-situ YBa2CU3O7-δ Superconducting films on polycrystalline diamond thin films has been demonstrated for the first time. Three different composite buffer layer systems have been explored for this purpose: (1) Diamond/Zr/YSZ/YBCO, (2) Diamond/Si3N4/YSZ/YBCO, and (3) Diamond/SiO2/YSZ/YBCO. The Zr was deposited by dc sputtering on the diamond films at 450 to 820 °C. The YSZ was deposited by reactive on-axis rf sputtering at 680 to 750 °C. The Si3N4 and SiO2 were also deposited by on-axis rf sputtering at 400 to 700 °C. YBCO films were grown on the buffer layers by off-axis rf sputtering at substrate temperatures between 690 °C and 750 °C. In all cases, the as-deposited YBCO films were superconducting above 77 K. This demonstration enables the fabrication of low heat capacity, fast response time bolometric IR detectors and paves the way for the use of HTSC on diamond for interconnect layers in multichip modules.


1993 ◽  
Vol 10 (4) ◽  
pp. 8-17 ◽  
Author(s):  
R.C. Frye ◽  
K.L. Tai ◽  
M.Y. Lau ◽  
T.J. Gabara
Keyword(s):  

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