scholarly journals The Temperature Dependence of the Flatband Voltage in High-Power IGBTs

2019 ◽  
Vol 66 (7) ◽  
pp. 5581-5584 ◽  
Author(s):  
Nick Baker ◽  
Francesco Iannuzzo
Keyword(s):  
Temperature Dependence ◽  
High Power ◽  
Flatband Voltage

Temperature Dependence of the Turn-On Delay Time of High-Power Lasers–Thyristors

2019 ◽  
Vol 66 (4) ◽  
pp. 1827-1830
Author(s):  
O. S. Soboleva ◽  
A. A. Podoskin ◽  
V. S. Golovin ◽  
P. S. Gavrina ◽  
V. V. Zolotarev ◽  
...  
Keyword(s):  
Temperature Dependence ◽  
High Power ◽  
Delay Time ◽  
High Power Lasers ◽  
Turn On

scholarly journals Temperature dependencies of thin-wire platinum bolometer of high power laser radiation

2018 ◽  
Vol 1 (2) ◽  
Author(s):  
Stanislav Victorovich Pogorelov
Keyword(s):  
Laser Radiation ◽  
Temperature Dependence ◽  
High Power ◽  
Pulse Energy ◽  
Thin Wire ◽  
High Power Laser ◽  
Power Laser ◽  
Different Temperatures ◽  
Continuous Power ◽  
High Power Laser Radiation

The resistance of platinum filament on heating to different temperatures have been measured. Measurements showed platinum wire resistivity matching to tabulated values, and therefore can be used to obtain the temperature dependence of conductors used in bolometric measurers of radiation.The results obtained make it possible to createabsolute bolometricmeasurer of continuous power and pulse energy of laser radiation.

Temperature Dependence of Capacity and Impedance Data from Fresh and Aged High-Power Lithium-Ion Cells

2006 ◽  
Vol 153 (8) ◽  
pp. A1610 ◽  
Author(s):  
D. P. Abraham ◽  
E. M. Reynolds ◽  
P. L. Schultz ◽  
A. N. Jansen ◽  
D. W. Dees
Keyword(s):  
Temperature Dependence ◽  
High Power ◽  
Lithium Ion ◽  
Lithium Ion Cells ◽  
Impedance Data

Temperature dependence of nonlinearity in high-speed, high-power photodetectors

2017 ◽  
Author(s):  
Josue Davila-Rodriguez ◽  
Holly Leopardi ◽  
Tara M. Fortier ◽  
Xiaojun Xie ◽  
Joe C. Campbell ◽  
...  
Keyword(s):  
Temperature Dependence ◽  
High Power ◽  
High Speed

Temperature Dependence of Breakdown Field in p-π-n GaN Diodes

1998 ◽  
Vol 512 ◽  
Author(s):  
A. Osinsky ◽  
M. S. Shur ◽  
R. Gaska
Keyword(s):  
Temperature Dependence ◽  
High Power ◽  
Elevated Temperatures ◽  
Electric Breakdown ◽  
Breakdown Field ◽  
Power Devices ◽  
Avalanche Photodetectors

ABSTRACTWe present the results of the study of the electric breakdown in p-π-n GaN diodes. The breakdown is observed at reverse biases above 40 V and is accompanied by the formation of microplasmas. The study shows that the observed breakdown field in GaN (on the order of 1 to 2 MV/cm) increases with the temperature. This feature makes GaN very promising for high power devices and avalanche photodetectors, operating at elevated temperatures.

Temperature dependence of latch-up effects in CMOS inverter induced by high power microwave

2014 ◽  
Vol 35 (8) ◽  
pp. 084011 ◽  
Author(s):  
Xinhai Yu ◽  
Changchun Chai ◽  
Xingrong Ren ◽  
Yintang Yang ◽  
Xiaowen Xi ◽  
...  
Keyword(s):  
Temperature Dependence ◽  
High Power ◽  
Cmos Inverter ◽  
High Power Microwave ◽  
Power Microwave ◽  
Latch Up

Temperature dependence of magnetoresistance for tunnel junctions with high-power plasma-oxidized barriers: Effects of annealing

2002 ◽  
Vol 91 (10) ◽  
pp. 7959 ◽  
Author(s):  
K. I. Lee ◽  
J. H. Lee ◽  
W. L. Lee ◽  
K. H. Shin ◽  
Y. B. Sung ◽  
...  
Keyword(s):  
Temperature Dependence ◽  
High Power ◽  
Tunnel Junctions
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