Magnetic-Field-Driven Ferromagnetic Resonance in Spin-Transfer Devices

2009 ◽  
Vol 45 (10) ◽  
pp. 3445-3448 ◽  
Author(s):  
R. Bonin ◽  
G. Bertotti ◽  
C. Serpico ◽  
M. d'Aquino ◽  
I.D. Mayergoyz
2015 ◽  
Vol 118 (1) ◽  
pp. 013903 ◽  
Author(s):  
M. A. Popov ◽  
I. V. Zavislyak ◽  
H. L. Chumak ◽  
M. B. Strugatsky ◽  
S. V. Yagupov ◽  
...  

2018 ◽  
Vol 178 ◽  
pp. 04004 ◽  
Author(s):  
Daniela Ionescu ◽  
Gabriela Apreotesei

Photonic metamaterials consisting of artificial opal with magnetic inclusions were considered, used in controllable microwave electronic devices. The analyzed structures consist of matrices of SiO2 nanospheres (diameter 200 - 400 nm) with included clusters of ferrite spinels (MnxCo0.6-xZn0.4Fe2O4, NixCo0.6-xZn0.4Fe2O4, LaxCo0.6-xZn0.4Fe2O4, NdxCo0.6-xZn0.4Fe2O4) in interspherical nanospacing (4 ÷ 7% concentration). The ellipsoidal clusters are polycrystalline, with spatial dimensions of 20 – 30 nm and grains of 5 – 12 nm. A controlled wave absorption was obtained in these high inductivity structures. Evolution of the wave attenuation coefficient, α[dB/m], in function of the applied magnetic field and particle inclusion size, for different content of the magnetic ions in the ferrite inclusion, have been determined at frequencies around the samples ferromagnetic resonance, by structural simulation. The test configuration was: sample inside the rectangular waveguide, mode TE10, in the frequency range 24 ÷ 40 GHz. The polarizing magnetic field for the ferrites was tested in the range of 0 ÷ 20 kOe and minimized by modifying the structure. The metamaterial design optimization was realized, controllable by different parameters at structure level. The ferromagnetic resonance influence on the control process was pointed out and also the particular results and effects which can be induced by the resonant behavior.


2013 ◽  
Vol 87 (9) ◽  
Author(s):  
Witold Skowroński ◽  
Maciej Czapkiewicz ◽  
Marek Frankowski ◽  
Jerzy Wrona ◽  
Tomasz Stobiecki ◽  
...  

1991 ◽  
Vol 238 ◽  
Author(s):  
K. L. Hogue ◽  
C. Kota ◽  
H. M. Naik

Ferromagnetic resonance (FMR) measurements on Co films of thicknesses 10–100 Å grown on GaAs (110) and Au (111) substrates have been made as a function of dc magnetic field orientation in a plane perpendicular to the film. Experimental data were fitted by writing the energy density expression including uniaxial perpendicular anisotropy terms up to second order and bulk anisotropy terms. Co films grown on Au (111) substrates show consistently a higher uniaxial perpendicular anisotropy compared to those grown on GaAs (110) for the same thickness of Co. This is attributed to stress induced anisotropy due to a lattice mismatch between Au (111) and Co layers.


2007 ◽  
Vol 7 (1) ◽  
pp. 344-349
Author(s):  
Hoang Yen Thi Nguyen ◽  
Sung-Jung Joo ◽  
Kuyoul Jung ◽  
Kyung-Ho Shin

Current induced magnetic reversal due to spin transfer torque is a promising candidate in advanced information storage technology. It has been intensively studied. This work reports the field-dependence of switching-currents for current induced magnetization switching in a uncoupled nano-sized cobalt-based spin valve of exchange biased type. The dependency is investigated in hysteretic regime at room temperature, in comparison with that of a trilayer simple spin valve. In the simple spin valve, the switching currents behave to the positive and the negative applied magnetic field symmetrically. In the exchange biased type, in contrast, the switching currents respond to the negative field in a quite unusual and different manner than to the positive field. A negative magnetic field then can shift the switching-currents into either negative or positive current range, dependently on whether a parallel or an antiparallel state of the spin valve was produced by that field. This different character of switching currents in the negative field range can be explained by the effect of the exchange bias pinning field on the spin-polarizer (the fixed Co layer) of the exchange biased spin valve. That unidirectional pinning filed could suppress the thermal magnetization fluctuation in the spin-polarizer, leading to a higher spin polarization of the current, and hence a lower switching current density than in the simple spin valve.


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