Studies of Degradation and Decomposition Mechanisms of High Temperature Lubricants Undergoing Laser Irradiation

2012 ◽  
Vol 48 (11) ◽  
pp. 4475-4478 ◽  
Author(s):  
Rong Ji ◽  
Yansheng Ma ◽  
Jack Wen Huei Tsai
2006 ◽  
Vol 527-529 ◽  
pp. 375-378 ◽  
Author(s):  
Toshiyuki Miyanagi ◽  
Hidekazu Tsuchida ◽  
Isaho Kamata ◽  
Tomonori Nakamura ◽  
R. Ishii ◽  
...  

We provide evidence of shrinking of Shockley-type stacking faults (SSFs) in the SiC epitaxial layer by high temperature annealing. Photoluminescence (PL) mapping in combination with high-power laser irradiation makes it possible to investigate the formation of SSFs, which lie between a pair of partial dislocations formed by dissociation of a basal plane dislocation (BPD), without fabrication of pin diodes. Using this technique, we investigated the annealing effect on SSFs. Comparing before and after annealing at 600°C for 10 min, it became obvious that high-temperature annealing results in shrinking of the faulted area of the SSFs. The SSFs form into the same features as those before annealing when high-power laser irradiation is performed again on the same area. This result shows that the faulted area of SSFs shrinks by 600°C annealing but the nuclei of SSFs (BPDs) do not disappear.


Author(s):  
Jonathan T. Essel ◽  
Ragini Acharya ◽  
Justin Sabourin ◽  
Baoqi Zhang ◽  
Kenneth K. Kuo ◽  
...  

2005 ◽  
Vol 108-109 ◽  
pp. 245-252 ◽  
Author(s):  
Hiroshi Yamada-Kaneta ◽  
K. Tanahashi

We have investigated the effect of infrared laser irradiation on the oxygen precipitation in silicon crystals during the heat-treatments. The laser light of the wave numbers of 1085 cm-1 was adopted, which is close to the wave number of the infrared absorption by oxygen in silicon (Si-O-Si) at high temperature. We have found that for the high-temperature anneals around 1200 °C for 1-2 h, the infrared laser irradiation during the anneals significantly (almost completely) suppresses the oxygen precipitation.


1998 ◽  
Vol 13 (4) ◽  
pp. 1033-1037 ◽  
Author(s):  
E. Haro-Poniatowski ◽  
C. Julien ◽  
B. Pecquenard ◽  
J. Livage ◽  
M. A. Camacho-López

The glass-crystalline transformation induced by laser irradiation is studied in MoO3. Before crystallization we have found that the system evolves from a low temperature glass phase to a high temperature glass phase. The crystallization kinetics depend strongly on the initial irradiation power. The power densities needed to induce the phase transformations, of the order of 15 W/mm2, are relatively low and suggest the possibility of using this material as a data storage medium.


JETP Letters ◽  
1996 ◽  
Vol 64 (7) ◽  
pp. 502-508 ◽  
Author(s):  
S. Yu. Gus’kov ◽  
M. O. Koshevoi ◽  
V. B. Rozanov ◽  
A. A. Rupasov ◽  
A. S. Shikanov ◽  
...  

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