Insulating gate III-N heterostructure field-effect transistors for high-power microwave and switching applications

2003 ◽  
Vol 51 (2) ◽  
pp. 624-633 ◽  
Author(s):  
M.A. Khan ◽  
G. Simin ◽  
Jinwei Yang ◽  
Jianping Zhang ◽  
A. Koudymov ◽  
...  
Keyword(s):  
High Power ◽  
Field Effect ◽  
Field Effect Transistors ◽  
High Power Microwave ◽  
Heterostructure Field Effect Transistors ◽  
Power Microwave

Use of high-purity AlxGa1−x as layers in epitaxial structures for high-power microwave field-effect transistors

1999 ◽  
Vol 25 (8) ◽  
pp. 595-597 ◽  
Author(s):  
K. S. Zhuravlev ◽  
A. I. Toropov ◽  
T. S. Shamirzaev ◽  
A. K. Bazarov ◽  
Yu. N. Rakov ◽  
...  
Keyword(s):  
High Power ◽  
High Purity ◽  
Field Effect ◽  
Microwave Field ◽  
Field Effect Transistors ◽  
High Power Microwave ◽  
Power Microwave

Low-Frequency Noise in SiO2/AlGaN/GaN Heterostructures on SiC and Sapphire Substrates

1999 ◽  
Vol 595 ◽  
Author(s):  
N. Pala ◽  
R. Gaska ◽  
M. Shur ◽  
J. W Yang ◽  
M. Asif Khan
Keyword(s):  
High Power ◽  
Field Effect Transistors ◽  
Low Frequency ◽  
Oxide Semiconductor ◽  
Frequency Noise ◽  
Low Frequency Noise ◽  
High Power Microwave ◽  
Heterostructure Field Effect Transistors ◽  
Power Microwave

AbstractThe low-frequency noise in GaN-based Metal-Oxide-Semiconductor Heterostructure Field Effect Transistors (MOS-HFETs) and HFETs on sapphire and n-SiC substrates were studied. Hooge parameter at zero gate bias was calculated about 8 × 10−4 for both types of the devices. The AlGaN/GaN MOS-HFETs exhibited extremely low gate leakage current and much lower noise at both positive and negative gate biases. These features demonstrate the high quality of the SiO2/AlGaN heterointerface and feasibility of this technology for high-power microwave transmitter and high-power, high-temperature switches.

scholarly journals Low-Frequency Noise in SiO2 /AlGaN/GaN Heterostructures on SiC and Sapphire Substrates

2000 ◽  
Vol 5 (S1) ◽  
pp. 612-618
Author(s):  
N. Pala ◽  
R. Gaska ◽  
M. Shur ◽  
J. W Yang ◽  
M. Asif Khan
Keyword(s):  
High Power ◽  
Field Effect Transistors ◽  
Low Frequency ◽  
Oxide Semiconductor ◽  
Frequency Noise ◽  
Low Frequency Noise ◽  
High Power Microwave ◽  
Heterostructure Field Effect Transistors ◽  
Power Microwave

The low-frequency noise in GaN-based Metal-Oxide-Semiconductor Heterostructure Field Effect Transistors (MOS-HFETs) and HFETs on sapphire and n-SiC substrates were studied. Hooge parameter at zero gate bias was calculated about 8 × 10−4 for both types of the devices. The AlGaN/GaN MOS-HFETs exhibited extremely low gate leakage current and much lower noise at both positive and negative gate biases. These features demonstrate the high quality of the SiO2/AlGaN heterointerface and feasibility of this technology for high-power microwave transmitter and high-power, high-temperature switches.

High-power AlGaN∕InGaN∕AlGaN∕GaN recessed gate heterostructure field-effect transistors

2005 ◽  
Vol 86 (14) ◽  
pp. 143512 ◽  
Author(s):  
R. S. Qhalid Fareed ◽  
X. Hu ◽  
A. Tarakji ◽  
J. Deng ◽  
R. Gaska ◽  
...  
Keyword(s):  
High Power ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Heterostructure Field Effect Transistors ◽  
Recessed Gate

Doping design of GaN-based heterostructure field-effect transistors with high electron density for high-power applications

2003 ◽  
Vol 200 (1) ◽  
pp. 168-174 ◽  
Author(s):  
Narihiko Maeda ◽  
Takehiko Tawara ◽  
Tadashi Saitoh ◽  
Kotaro Tsubaki ◽  
Naoki Kobayashi
Keyword(s):  
Electron Density ◽  
High Power ◽  
Field Effect ◽  
Field Effect Transistors ◽  
High Electron ◽  
High Electron Density ◽  
Heterostructure Field Effect Transistors

(Invited) High-Power AlGaN/GaN Heterostructure Field-Effect Transistors on 200mm Si Substrates

2015 ◽  
Vol 66 (1) ◽  
pp. 191-199 ◽  
Author(s):  
C.- F. Lo ◽  
O. Laboutin ◽  
C.- K. Kao ◽  
K. O'Connor ◽  
D. Hill ◽  
...  
Keyword(s):  
High Power ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Si Substrates ◽  
Heterostructure Field Effect Transistors ◽  
Gan Heterostructure
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