Use of high-purity AlxGa1−x as layers in epitaxial structures for high-power microwave field-effect transistors

1999 ◽  
Vol 25 (8) ◽  
pp. 595-597 ◽  
Author(s):  
K. S. Zhuravlev ◽  
A. I. Toropov ◽  
T. S. Shamirzaev ◽  
A. K. Bazarov ◽  
Yu. N. Rakov ◽  
...  
2005 ◽  
Vol 906 ◽  
Author(s):  
Alexander Sergeevitch Vanetsev ◽  
Andrei Vladimirovitch Orlov ◽  
Yurii Dmitrievitch Tretyakov

AbstractThe goal of this work was to investigate the capabilities of high-power microwaves in manufacture of small-grained barium cerate ceramics. Having compared the samples sintered in the microwave and the thermal fields, we inferred that the microwave sintering occurs at far higher rates. It is also noteworthy that microwave sintering provides a record-breaking low temperature of barium cerate sintering (900°C). Having studied the effect of a microwave field on the microstructure of sintering products, we found that high-power microwave processing significantly reduces the average grain size of barium cerate ceramics.


1998 ◽  
Vol 19 (2) ◽  
pp. 44-46 ◽  
Author(s):  
Q. Chen ◽  
J.W. Yang ◽  
R. Gaska ◽  
M.A. Khan ◽  
M.S. Shur ◽  
...  

1996 ◽  
Author(s):  
Thad J. Englert ◽  
Michael D. Haworth ◽  
Kyle J. Hendricks ◽  
Frederick M. Lehr ◽  
Donald A. Shiffler

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